SI4862DY-T1-E3

Mfr. #:: SI4862DY-T1-E3
制造商:: Vishay
描述:: RF Bipolar Transistors MOSFET 16 Volt 25 Amp 3.5W
生命周期:: 制造商新产品。
数据表:: SI4862DY-T1-E3 数据表
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更多信息:: SI4862DY-T1-E3 更多信息

产品属性
属性值

制造商: 威世

产品分类: FET - 单

打包: 卷轴

部分别名: SI4862DY-T1

单位重量: 0.017870 oz

安装方式: 贴片/贴片

商品名: 沟槽场效应晶体管

包装盒: SO-8

技术: 硅

通道数: 1 Channel

配置: 单身的

晶体管型: 1 N-Channel

钯功耗: 1.6 W

最高工作温度: + 150 C

最低工作温度: - 55 C

秋季时间: 38 ns

上升时间: 38 ns

VGS-栅极-源极-电压: 8 V

Id 连续漏极电流: 17 A

Vds-漏-源-击穿电压: 16 V

Rds-On-Drain-Source-Resistance: 3.3 mOhms

晶体管极性: N通道

典型关断延迟时间: 120 ns

典型开启延迟时间: 42 ns

通道模式: 增强

Tags: SI486, SI48, SI4

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI4862DY-T1-E3 描述

***ied Electronics & Automation: MOSFET, Power,N-Ch,VDSS 16V,RDS(ON) 0.0027Ohm,ID 17A,SO-8,PD 1.6W,VGS +/-8V,-55C

***et: Trans MOSFET N-CH 16V 17A 8-Pin SOIC N T/R

***ark: Transistor Polarity:n Channel; Drain Source Voltage Vds:16V; Continuous Drain Current Id:17A; On Resistance Rds(On):0.0027Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:600Mv Rohs Compliant: Yes

SI4862DY-T1-E3 更多信息

Si4 MOSFETs: Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More

Market price

型号	制造商	描述	库存	价格
SI4862DY-T1-E3 DISTI # SI4862DY-T1-E3-ND	Vishay Siliconix	MOSFET N-CH 16V 17A 8-SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	Temporarily Out of Stock	2500:$1.7556
SI4862DY-T1-E3 DISTI # SI4862DY-T1-E3	Vishay Intertechnologies	Trans MOSFET N-CH 16V 17A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4862DY-T1-E3) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 2500	2500:$1.6900 5000:$1.6900 10000:$1.6900 15000:$1.6900 25000:$1.6900
SI4862DY-T1-E3. DISTI # 28AC2149	Vishay Intertechnologies	Transistor Polarity:N Channel,Continuous Drain Current Id:17A,Drain Source Voltage Vds:16V,On Resistance Rds(on):0.0027ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:600mV,Power Dissipation Pd:1.6W,No. of Pins:8Pins RoHS Compliant: Yes	2500	1:$1.6000 2500:$1.6000
SI4862DY-T1-E3 DISTI # 70026114	Vishay Siliconix	MOSFET,Power,N-Ch,VDSS 16V,RDS(ON) 0.0027Ohm,ID 17A,SO-8,PD 1.6W,VGS +/-8V,-55d RoHS: Compliant	0	2500:$1.9060 5000:$1.8560 7500:$1.7360
SI4862DY-T1-E3 DISTI # 781-SI4862DY-T1-E3	Vishay Intertechnologies	MOSFET 16 Volt 25 Amp 3.5W RoHS: Compliant	0	2500:$1.6000
SI4862DY-T1-E3	Vishay Intertechnologies	MOSFET 16 Volt 25 Amp 3.5W	Americas -

图片	型号	描述
	Mfr.#: SI4862DY-T1-E3 OMO.#: OMO-SI4862DY-T1-E3	MOSFET 16 Volt 25 Amp 3.5W
	Mfr.#: SI4862DY-T1-GE3 OMO.#: OMO-SI4862DY-T1-GE3	MOSFET 16V 25A 3.5W 3.3mohm @ 4.5V
	Mfr.#: SI4862DY-T1-E3 OMO.#: OMO-SI4862DY-T1-E3-VISHAY	RF Bipolar Transistors MOSFET 16 Volt 25 Amp 3.5W
	Mfr.#: SI4862DY-T1-GE3 OMO.#: OMO-SI4862DY-T1-GE3-VISHAY	RF Bipolar Transistors MOSFET 16V 25A 3.5W 3.3mohm @ 4.5V

SI4862DY-T1-E3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes