OMO ElectronicOMO Electronic
Expand menu
您好，登录我的帐户
0 购物车

FQP34N20

FQP34N20
Mfr. #:
FQP34N20
制造商:
ON Semiconductor / Fairchild
描述:
MOSFET 200V N-Channel QFET
生命周期:
制造商新产品。
数据表:
FQP34N20 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
产品属性
属性值
制造商：
安森美半导体
产品分类：
MOSFET
RoHS：
Y
技术：
硅
安装方式：
通孔
包装/案例：
TO-220-3
通道数：
1 Channel
晶体管极性：
N通道
Vds - 漏源击穿电压：
200 V
Id - 连续漏极电流：
31 A
Rds On - 漏源电阻：
75 mOhms
Vgs - 栅源电压：
30 V
最低工作温度：
- 55 C
最高工作温度：
+ 150 C
Pd - 功耗：
180 W
配置：
单身的
频道模式：
增强
商品名：
场效应管
打包：
管子
高度：
16.3 mm
长度：
10.67 mm
系列：
FQP34N20
晶体管类型：
1 N-Channel
类型：
MOSFET
宽度：
4.7 mm
品牌：
安森美半导体/飞兆半导体
正向跨导 - 最小值：
25 S
秋季时间：
115 ns
产品类别：
MOSFET
上升时间：
280 ns
出厂包装数量：
1000
子类别：
MOSFET
典型关断延迟时间：
125 ns
典型的开启延迟时间：
40 ns
单位重量：
0.063493 oz
Tags
FQP34, FQP3, FQP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
Power MOSFET, N-Channel, QFET®, 200 V, 31 A, 75 mΩ, TO-220
***ure Electronics
Single N-Channel 200 V 0.075 Ohm 78 nC 180 W DMOS Flange Mount Mosfet - TO-220-3
***et
Trans MOSFET N-CH 200V 31A 3-Pin(3+Tab) TO-220AB Rail
***r Electronics
Power Field-Effect Transistor, 31A I(D), 200V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ment14 APAC
MOSFET,N CH,200V,31A,TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:31A; Drain Source Voltage Vds:200V; On Resistance Rds(on):60mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:180W; Operating Temperature Range:-55°C to +105°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:31A; Power Dissipation Pd:180W; Voltage Vgs Max:30V
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
***emi
N-Channel Power MOSFET, UniFETTM, 200V, 39A, 66mΩ, TO-220F
***ure Electronics
FDPF39N20 Series 200 V 39 A 66 mOhm N-Ch UniFet Mosfet - TO-220-3FP
***Yang
Trans MOSFET N-CH 200V 39A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube
***enic
200V 39A 37W 66m´Î@10V19.5A 5V@250Ã×A N Channel TO-220F(TO-220IS) MOSFETs ROHS
***r Electronics
Power Field-Effect Transistor, 39A I(D), 200V, 0.066ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ment14 APAC
MOSFET, N, TO-220F; Transistor Polarity:N Channel; Continuous Drain Current Id:39A; Drain Source Voltage Vds:200V; On Resistance Rds(on):66mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:37W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220F; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:39A; Package / Case:TO-220F; Power Dissipation Pd:37W; Pulse Current Idm:156A; Termination Type:Through Hole; Voltage Vds Typ:200V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V
***rchild Semiconductor
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.082Ohm;ID 31A;TO-220AB;PD 200W;VGS +/-30V
***ure Electronics
Single N-Channel 200 V 0.082 Ohm 107 nC HEXFET® Power Mosfet - TO-220-3
***ineon SCT
200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***p One Stop
Trans MOSFET N-CH 200V 31A 3-Pin(3+Tab) TO-220AB Tube
***trelec
MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 200 W
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 31A I(D), 200V, 0.082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ment14 APAC
MOSFET, N, 200V, 31A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:31A; Drain Source Voltage Vds:200V; On Resistance Rds(on):82mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5.5V; Power Dissipation Pd:200W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:31A; Junction to Case Thermal Resistance A:0.75°C/W; Package / Case:TO-220AB; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulse Current Idm:124A; Termination Type:Through Hole; Voltage Vds Typ:200V; Voltage Vgs Max:5.5V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5.5V
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design
***ure Electronics
Single N-Channel 150 V 56 mOhm 60 nC HEXFET® Power Mosfet - TO-220-3
***ineon SCT
150V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 33A I(D), 150V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ment14 APAC
N CH MOSFET, 150V, 33A, TO-220AB; Transi; Transistor Polarity:N Channel; Continuous Drain Current Id:33A; Drain Source Voltage Vds:150V; On Resistance Rds(on):56mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5.5V; Power Dissipation Pd:170W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:33A; Junction to Case Thermal Resistance A:0.9°C/W; On State resistance @ Vgs = 10V:56ohm; Package / Case:TO-220AB; Power Dissipation Pd:170W; Power Dissipation Pd:170W; Pulse Current Idm:130A; Termination Type:Through Hole; Voltage Vds Typ:150V; Voltage Vgs Max:5.5V; Voltage Vgs Rds on Measurement:10V
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design
***emi
N-Channel Power MOSFET, UniFETTM, 250 V, 33 A, 94 mΩ, TO-220
***Yang
Trans MOSFET N-CH 250V 33A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube
***ure Electronics
N-Channel 250 V 94 mOhm Flange Mount Mosfet - TO-220
*** Stop Electro
Power Field-Effect Transistor, 33A I(D), 250V, 0.094ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ark
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:250V; Continuous Drain Current, Id:33A; On Resistance, Rds(on):0.094ohm; Rds(on) Test Voltage, Vgs:5V; Threshold Voltage, Vgs Typ:30V ;RoHS Compliant: Yes
***rchild Semiconductor
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
***ment14 APAC
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:33A; Drain Source Voltage Vds:250V; On Resistance Rds(on):94mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:235W; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:SOT-78B; Capacitance Ciss Typ:1640pF; Current Id Max:33A; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; Junction to Case Thermal Resistance A:0.53°C/W; On State Resistance Max:94mohm; On State Resistance Typ:77mohm; Package / Case:TO-220; Pin Configuration:G(1),D(2)S(3); Power Dissipation Pd:235W; Power Dissipation Pd:235W; Pulse Current Idm:132A; Termination Type:Through Hole; Voltage Vds Typ:250V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V; Voltage Vgs th Min:3V
*** Source Electronics
Trans MOSFET N-CH Si 200V 25A 3-Pin(3+Tab) TO-220AB Tube / MOSFET N-CH 200V 25A TO-220AB
***ineon SCT
200V Single N-Channel Digital Audio HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***ure Electronics
Single N-Channel 200 V 72.5 mOhm 25 nC HEXFET® Power Mosfet - TO-220-3
***ineon
Benefits: RoHS Compliant | Target Applications: Battery Operated Drive; Class D Audio; Consumer Full-Bridge; Full-Bridge; Push-Pull
***ment14 APAC
MOSFET, CLASS D, 200V, TO220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:25A; Drain Source Voltage Vds:200V; On Resistance Rds(on):60mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:25A; Package / Case:TO-220AB; Power Dissipation Pd:144W; Power Dissipation Pd:144W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:200V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V
***ure Electronics
Single N-Channel 150 V 0.146 Ohm 34 nC 135 W Flange Mount Mosfet - TO-220-3
***Yang
Trans MOSFET N-CH 150V 4A 3-Pin(3+Tab) TO-220AB Tube - Rail/Tube
***emi
N-Channel PowerTrench® MOSFET 150V, 29A, 54mΩ
***ter Electronics
TO-220AB, SINGLE, N-CH, 150V, 57MOHM ULTRAFET TRENCH MOSFET
***r Electronics
Power Field-Effect Transistor, 4A I(D), 150V, 0.054ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ment14 APAC
MOSFET, N CH 29A 150V, TO220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:9A; Drain Source Voltage Vds:150V; On Resistance Rds(on):45mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:29A; Package / Case:TO-220; Power Dissipation Pd:135W; Termination Type:Through Hole; Voltage Vds Typ:150V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
型号 制造商 描述 库存 价格
FQP34N20
DISTI # 26637338		ON SemiconductorSQ1000
  • 2000:$1.1000
  • 1000:$1.2283
FQP34N20
DISTI # 9767400		ON SemiconductorSQ500
  • 10000:$0.8601
  • 6000:$0.8812
  • 4000:$0.8927
  • 2000:$0.9042
  • 1000:$0.9109
FQP34N20
DISTI # FQP34N20-ND		ON SemiconductorMOSFET N-CH 200V 31A TO-220
RoHS: Compliant
Min Qty: 1
Container: Tube		870In Stock
  • 1000:$1.3317
  • 500:$1.6072
  • 100:$2.0664
  • 10:$2.5710
  • 1:$2.8500
FQP34N20L
DISTI # FQP34N20L-ND		ON SemiconductorMOSFET N-CH 200V 31A TO-220
RoHS: Compliant
Min Qty: 1000
Container: Tube		Limited Supply - Call
    FQP34N20
    DISTI # FQP34N20    		ON SemiconductorTrans MOSFET N-CH 200V 31A 3-Pin(3+Tab) TO-220AB Rail (Alt: FQP34N20)
    RoHS: Compliant
    Min Qty: 1    		Europe - 0
    • 1:€1.5779
    • 10:€1.2909
    • 25:€1.1029
    • 50:€1.0019
    • 100:€0.9859
    • 500:€0.9709
    • 1000:€0.9559
    FQP34N20
    DISTI # FQP34N20    		ON SemiconductorTrans MOSFET N-CH 200V 31A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube (Alt: FQP34N20)
    RoHS: Compliant
    Min Qty: 1000
    Container: Tube    		Americas - 0
    • 1000:$0.9069
    • 1002:$0.9039
    • 2002:$0.9009
    • 5000:$0.8989
    • 10000:$0.8959
    FQP34N20
    DISTI # 87X8793    		ON SemiconductorMOSFET Transistor, N Channel, 31 A, 200 V, 0.06 ohm, 10 V, 5 V RoHS Compliant: Yes530
    • 1:$2.1500
    • 10:$1.8500
    • 100:$1.4900
    • 500:$1.3200
    • 1000:$1.1000
    FQP34N20.
    DISTI # 81AC8734    		ON SemiconductorQF 200V 75MOHM TO2200
    • 1:$0.9490
    • 2000:$0.9420
    • 4000:$0.9300
    • 6000:$0.9180
    • 10000:$0.8960
    FQP34N20
    DISTI # 512-FQP34N20    		ON SemiconductorMOSFET 200V N-Channel QFET
    RoHS: Compliant    		433
    • 1:$1.9900
    • 10:$1.7000
    • 100:$1.3600
    FQP34N20L
    DISTI # 512-FQP34N20L    		ON SemiconductorMOSFET 200V N-Ch QFET Logic Level
    RoHS: Compliant    		0
      FQP34N20Fairchild Semiconductor CorporationPower Field-Effect Transistor, 31A I(D), 200V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
      RoHS: Compliant      		13000
      • 1000:$1.2500
      • 500:$1.3200
      • 100:$1.3700
      • 25:$1.4300
      • 1:$1.5400
      FQP34N20
      DISTI # 6715092      		ON SemiconductorMOSFET N-CHANNEL 200V 31A TO220AB, PK805
      • 5:£1.6880
      • 25:£1.4100
      • 100:£1.1100
      • 250:£1.0720
      • 500:£0.8040
      FQP34N20
      DISTI # 6715092P      		ON SemiconductorMOSFET N-CHANNEL 200V 31A TO220AB, TU225
      • 25:£1.4100
      • 100:£1.1100
      • 250:£1.0720
      • 500:£0.8040
      FQP34N20Fairchild Semiconductor Corporation 1400
        FQP34N20ON SemiconductorPower Field-Effect Transistor, 31A I(D), 200V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
        RoHS: Compliant        		Europe - 650
          FQP34N20
          DISTI # 1839004          		ON SemiconductorMOSFET,N CH,200V,31A,TO-220
          RoHS: Compliant          		541
          • 1:£1.7300
          • 10:£1.3500
          • 100:£1.0500
          • 250:£0.9840
          • 500:£0.9170
          FQP34N20
          DISTI # 1839004          		ON SemiconductorMOSFET,N CH,200V,31A,TO-220
          RoHS: Compliant          		625
          • 1:$3.1500
          • 10:$2.6900
          • 100:$2.1600
          • 500:$1.8800
          • 1000:$1.5700
          图片 型号 描述
          BC560CTA

          Mfr.#: BC560CTA

          OMO.#: OMO-BC560CTA

          		 Bipolar Transistors - BJT TO-92 PNP GP AMP
          1N4148

          Mfr.#: 1N4148

          OMO.#: OMO-1N4148

          		 Diodes - General Purpose, Power, Switching 100V Io/200mA BULK
          US1MFA

          Mfr.#: US1MFA

          OMO.#: OMO-US1MFA

          		 Rectifiers 1000V 1A High Effic Rectifier
          ERJ-6ENF4301V

          Mfr.#: ERJ-6ENF4301V

          OMO.#: OMO-ERJ-6ENF4301V

          		 Thick Film Resistors - SMD 0805 4.3Kohms 1% AEC-Q200
          ERJ-6ENF4301V

          Mfr.#: ERJ-6ENF4301V

          OMO.#: OMO-ERJ-6ENF4301V-PANASONIC

          		 Thick Film Resistors - SMD 0805 4.3Kohms 1% Tol
          1N4148

          Mfr.#: 1N4148

          OMO.#: OMO-1N4148-ON-SEMICONDUCTOR

          		 Diodes - General Purpose, Power, Switching 100V Io/200mA BULK
          BC560CTA

          Mfr.#: BC560CTA

          OMO.#: OMO-BC560CTA-ON-SEMICONDUCTOR

          		 TRANS PNP 45V 0.1A TO-92
          RK73H2ATTD8450F

          Mfr.#: RK73H2ATTD8450F

          OMO.#: OMO-RK73H2ATTD8450F-1090

          		 Thick Film Resistors - SMD 1/8watts 845ohms 1%
          GA3459-BL

          Mfr.#: GA3459-BL

          OMO.#: OMO-GA3459-BL-1190

          		 Transformer, for LT3751, SMT, RoHS
          US1MFA

          Mfr.#: US1MFA

          OMO.#: OMO-US1MFA-ON-SEMICONDUCTOR

          		 Rectifiers 1000V 1A High Effic Rectifie
          可用性
          库存:
          918
          订购:
          2901
          输入数量:
          FQP34N20的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
          从...开始
          最新产品
          • Gate Drivers
            Gate Drivers
            The ON Semiconductor IGBT / MOSFET drive optocoupler series provides isolation for safety regulations.
          • Compare FQP34N20
            Compare FQP34N20
            FQP34N20 vs FQP34N20FAIRCHILD vs FQP34N20TO220
          • NCP137 700 mA LDO Regulators
            NCP137 700 mA LDO Regulators
            ON Semiconductor's NCP137 700 mA very low dropout bias rail regulators are ideal for space constrained, noise sensitive applications.
          • NCP114 Low Dropout Regulators
            NCP114 Low Dropout Regulators
            ON Semiconductor's NCP114 is a high performance, 300 mA, low dropout, linear regulator. This device delivers very high PSRR (over 75 dB at 1 kHz) and excellent dynamic performance as load/li
          • LC717A00AR Touch Sensor
            LC717A00AR Touch Sensor
            These high performance Capacitance-Digital-Converter LSI for electrostatic capacitive touch sensors feature 8-input capacitance.
          • FDMQ86530L Quad-MOSFET
            FDMQ86530L Quad-MOSFET
            ON Semiconductor’s FDMQ86530L solution improves the conduction loss and efficiency of the conventional diode bridge, providing a ten-fold improvement in power dissipation.
          More Newest Products
          Top