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IRFB7546PBF

IRFB7546PBF
Mfr. #:
IRFB7546PBF
制造商:
Infineon Technologies
描述:
MOSFET MOSFET N CH 60V 75A TO-220AB
生命周期:
制造商新产品。
数据表:
IRFB7546PBF 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:
IRFB7546PBF 更多信息
产品属性
属性值
制造商：
英飞凌
产品分类：
MOSFET
RoHS：
Y
技术：
硅
安装方式：
通孔
包装/案例：
TO-220-3
通道数：
1 Channel
晶体管极性：
N通道
Vds - 漏源击穿电压：
60 V
Id - 连续漏极电流：
75 A
Rds On - 漏源电阻：
6 mOhms
Vgs th - 栅源阈值电压：
3.7 V
Vgs - 栅源电压：
20 V
Qg - 门电荷：
58 nC
最低工作温度：
- 55 C
最高工作温度：
+ 175 C
Pd - 功耗：
99 W
配置：
单身的
商品名：
强IRFET
打包：
管子
高度：
15.65 mm
长度：
10 mm
晶体管类型：
1 N-Channel
宽度：
4.4 mm
品牌：
英飞凌科技
正向跨导 - 最小值：
150 S
秋季时间：
34 ns
产品类别：
MOSFET
上升时间：
51 ns
出厂包装数量：
1000
子类别：
MOSFET
典型关断延迟时间：
32 ns
典型的开启延迟时间：
11 ns
第 # 部分别名：
SP001560262
单位重量：
0.211644 oz
Tags
IRFB754, IRFB75, IRFB7, IRFB, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ineon SCT
60V Single N-Channel HEXFET Power MOSFET in a Lead Free TO-220AB package, TO220-3, RoHS
***ure Electronics
Single N-Channel 60 V 7.3 mOhm 87 nC HEXFET® Power Mosfet - TO-220-3
***ark
TUBE / MOSFET, 60V, 75A, 7.3 mOhm, 58nC, TO-220
***Yang
Trans MOSFET N-CH 60V 75A 3-Pin TO-220AB Tube - Rail/Tube
***et
MOSFET, 60V, 75A, 7.3 MOHM, 58 NC QG, TO-220AB
***trelec
MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 99 W
***ment14 APAC
MOSFET, N CH, 60V, 75A, TO-220AB-3; Transistor Polarity:N Channel; Continuous Drain Current Id:75A; Source Voltage Vds:60V; On Resistance
***roFlash
Power Field-Effect Transistor, 75A I(D), 60V, 0.0073ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ineon
Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 7.1Milliohms;ID 79A;TO-220AB;PD 110W;-55deg
***ure Electronics
Single N-Channel 60 V 8.4 mOhm 46 nC HEXFET® Power Mosfet - TO-220-3
***ineon SCT
60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***Yang
Trans MOSFET N-CH 60V 79A 3-Pin(3+Tab) TO-220AB - Rail/Tube
***trelec
MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 110 W
*** Stop Electro
Power Field-Effect Transistor, 79A I(D), 60V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ineon
Benefits: RoHS Compliant | Target Applications: AC-DC; Battery Operated Drive; Consumer Full-Bridge; Full-Bridge; Push-Pull
***ment14 APAC
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:79A; Drain Source Voltage Vds:60V; On Resistance Rds(on):7.1mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:110W; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:79A; Package / Case:TO-220; Power Dissipation Pd:110W; Pulse Current Idm:315A; Termination Type:Through Hole; Voltage Vds Typ:60V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 7.34 Milliohms;ID 80A;TO-220AB;PD 140W;-55de
***ure Electronics
Single N-Channel 75 V 9 mOhm 84 nC HEXFET® Power Mosfet - TO-220-3
***klin Elektronik
INFINEON THT MOSFET NFET 75V 80A 9mΩ 175°C TO-220 IRFB3607PBF
***ineon SCT
75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***Yang
Trans MOSFET N-CH 75V 80A 3-Pin(3+Tab) TO-220AB - Rail/Tube
***trelec
MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 140 W
***ineon
Benefits: RoHS Compliant | Target Applications: AC-DC; Battery Operated Drive
***ment14 APAC
MOSFET, N, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:75V; On Resistance Rds(on):7.34mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:140W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:80A; Package / Case:TO-220AB; Power Dissipation Pd:140W; Pulse Current Idm:310A; Termination Type:Through Hole; Voltage Vds Typ:75V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 12 Milliohms;ID 84A;TO-220AB;PD 200W;gFS 69S
***ure Electronics
Single N-Channel 60 V 12 mOhm 130 nC HEXFET® Power Mosfet - TO-220-3
***ineon SCT
60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***Yang
Trans MOSFET N-CH 60V 84A 3-Pin(3+Tab) TO-220AB - Rail/Tube
*** Stop Electro
Power Field-Effect Transistor, 75A I(D), 60V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:60V; Continuous Drain Current, Id:84A; On Resistance, Rds(on):12mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220AB ;RoHS Compliant: Yes
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature | Target Applications: Consumer Full-Bridge; Full-Bridge; Push-Pull
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 84 / Drain-Source Voltage (Vds) V = 60 / ON Resistance (Rds(on)) mOhm = 12 / Gate-Source Voltage V = 20 / Fall Time ns = 53 / Rise Time ns = 78 / Turn-OFF Delay Time ns = 48 / Turn-ON Delay Time ns = 12 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-220 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 200
***ment14 APAC
MOSFET, N, 60V, 81A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:81A; Drain Source Voltage Vds:60V; On Resistance Rds(on):12mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:170W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:84A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:0.9°C/W; Lead Spacing:2.54mm; No. of Transistors:1; On State resistance @ Vgs = 10V:12mohm; Package / Case:TO-220AB; Pin Format:1 g; 2 d/tab; 3 s; Power Dissipation Pd:170W; Power Dissipation Pd:170W; Pulse Current Idm:330A; Termination Type:Through Hole; Voltage Vds Typ:60V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
***eco
Transistor RFP70N06 N-Channel MOSFET 60 Volt 70 Amp TO-220AB
***ure Electronics
N-Channel 60 V 0.014 Ohm Flange Mount Power Mosfet - TO-220AB
***emi
N-Channel Power MOSFET 60V, 70A, 14mΩ
***r Electronics
Power Field-Effect Transistor, 70A I(D), 60V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***rchild Semiconductor
These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. These transistors can be operated directly from integrated circuits. Formerly developmental type TA78440.
***ment14 APAC
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:70A; Drain Source Voltage Vds:60V; On Resistance Rds(on):14mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:150W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:70A; Current Temperature:25°C; Device Marking:RFP70N06; Full Power Rating Temperature:25°C; No. of Transistors:1; On State Resistance Max:14mohm; Package / Case:TO-220AB; Power Dissipation Pd:150W; Power Dissipation Pd:150W; Pulse Current Idm:180A; Termination Type:Through Hole; Voltage Vds Typ:60V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V
***ure Electronics
N-Channel 55 V 0.012 Ohm Flange Mount UltraFET Power Mosfet - TO-220AB
***hard Electronics
Transistor: N-MOSFET; unipolar; 55V; 75A; 200W; TO220; UltraFET®
***emi
N-Channel UltraFET Power MOSFET 55V, 75A, 12mΩ
***Yang
Trans MOSFET N-CH 55V 75A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube
***enic
55V 75A 12m´Î@10V75A 200W 4V@250Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS
***r Electronics
Power Field-Effect Transistor, 75A I(D), 55V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ment14 APAC
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:75A; Drain Source Voltage Vds:55V; On Resistance Rds(on):12mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:200W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:75A; Current Temperature:25°C; Full Power Rating Temperature:25°C; No. of Transistors:1; On State Resistance Max:12mohm; Package / Case:TO-220AB; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulse Current Idm:160A; Termination Type:Through Hole; Voltage Vds Typ:55V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V
***rchild Semiconductor
These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products.Formerly developmental type TA75339.
***ical
Trans MOSFET N-CH 55V 66A 3-Pin (3+Tab) TO-220AB Rail
***ponent Stockers USA
66 A 55 V 0.016 ohm N-CHANNEL Si POWER MOSFET TO-220AB
***ment14 APAC
MOSFET, N TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:56A; Drain Source Voltage Vds:55V; On Resistance Rds(on):10mohm; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (15-Dec-2010); Current Id Max:66A; Current Temperature:25°C; Full Power Rating Temperature:25°C; No. of Transistors:1; On State Resistance Max:16mohm; Package / Case:TO-220AB; Power Dissipation Pd:111W; Power Dissipation Pd:111W; Voltage Vgs th Max:3V
Designing Power Systems
Infineon Power MOSFETs are designed to bring more efficiency, power density and cost effectiveness to your products. The full range of OptiMOS™ and StrongIRFET™ N-channel Power MOSFETs enable innovation and performance in applications such as switch mode power supplies (SMPS), motor control and drives, inverters and computing. The OptiMOS™ and StrongIRFET™ families cover the 20V to 300V range of Power MOSFET products. Infineon offers the OptiMOS™ and StrongIRFET™ product families. These are two highly innovative families that consistently meet the highest quality and performance demands in key specifications for power system design. OptiMOS™ is the market leader in highly efficient solutions for power generation, power supply and power consumption.Learn More
Infineon Automatic Opening Systems
Infineon Automatic Opening Systems incorporate smart sensors, motor controls, supplies and battery management to automate sliding, swing or garage doors, sun blinds and gates. When automated, these doors manage opening actions, avoid unintentional opening, control speed and torque, detect objects along paths and other functions.Learn More
StrongIRFET™ Power MOSFETs
Infineon StrongIRFET™ Power MOSFET family are optimized for low RDS(on) and high current capability. These devices are ideal for low-frequency applications requiring performance and ruggedness. These MOSFETs have the highest current carrying capability in the industry. This feature leads to increased robustness and reliability for high power density applications which require high efficiency and reliability. 
型号 制造商 描述 库存 价格
IRFB7546PBF
DISTI # V99:2348_13890774		Infineon Technologies AGTrans MOSFET N-CH 60V 75A 3-Pin(3+Tab) TO-220AB Tube1006
  • 10000:$0.3481
  • 2000:$0.3867
  • 1000:$0.4316
  • 500:$0.5269
  • 100:$0.5864
  • 10:$0.7211
  • 1:$0.8172
IRFB7546PBF
DISTI # IRFB7546PBF-ND		Infineon Technologies AGMOSFET N-CH 60V 75A TO-220AB
RoHS: Compliant
Min Qty: 1
Container: Tube		5966In Stock
  • 1000:$0.5934
  • 500:$0.7353
  • 100:$0.9304
  • 10:$1.1610
  • 1:$1.3000
IRFB7546PBF
DISTI # 26198190		Infineon Technologies AGTrans MOSFET N-CH 60V 75A 3-Pin(3+Tab) TO-220AB Tube1006
  • 1000:$0.4467
  • 500:$0.5403
  • 100:$0.5961
  • 18:$0.7265
IRFB7546PBF
DISTI # IRFB7546PBF		Infineon Technologies AGTrans MOSFET N-CH 60V 75A 3-Pin TO-220AB Tube - Rail/Tube (Alt: IRFB7546PBF)
RoHS: Compliant
Min Qty: 1000
Container: Tube		Americas - 0
  • 1000:$0.3709
  • 2000:$0.3579
  • 4000:$0.3449
  • 6000:$0.3329
  • 10000:$0.3269
IRFB7546PBF
DISTI # IRFB7546PBF		Infineon Technologies AGTrans MOSFET N-CH 60V 75A 3-Pin TO-220AB Tube (Alt: IRFB7546PBF)
RoHS: Compliant
Min Qty: 1000
Container: Tube		Asia - 0
    IRFB7546PBF
    DISTI # SP001560262    		Infineon Technologies AGTrans MOSFET N-CH 60V 75A 3-Pin TO-220AB Tube (Alt: SP001560262)
    RoHS: Compliant
    Min Qty: 1
    Container: Tube    		Europe - 0
    • 1:€0.5419
    • 10:€0.4819
    • 25:€0.4339
    • 50:€0.3939
    • 100:€0.3609
    • 500:€0.3329
    • 1000:€0.3099
    IRFB7546PBF
    DISTI # 43X7205    		Infineon Technologies AGMOSFET, N CHANNEL, 60V, 75A, TO-220AB-3,Transistor Polarity:N Channel,Continuous Drain Current Id:75A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.006ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.7V,MSL:- RoHS Compliant: Yes200
    • 1:$1.1700
    • 10:$1.0100
    • 100:$0.7940
    • 500:$0.7110
    • 1000:$0.5780
    • 2500:$0.5220
    • 10000:$0.5050
    IRFB7546PBF
    DISTI # 70411811    		Infineon Technologies AGIRFB7546PBF N-channel MOSFET Transistor,75 A,60 V,3-Pin TO-220AB
    RoHS: Compliant    		0
    • 250:$0.9800
    • 500:$0.8500
    • 1000:$0.7700
    • 2000:$0.5400
    • 4000:$0.4700
    IRFB7546PBF
    DISTI # 942-IRFB7546PBF    		Infineon Technologies AGMOSFET MOSFET N CH 60V 75A TO-220AB
    RoHS: Compliant    		1242
    • 1:$1.0600
    • 10:$0.9030
    • 100:$0.6940
    • 500:$0.6130
    • 1000:$0.4840
    IRFB7546PBF
    DISTI # 8208851    		Infineon Technologies AGMOSFET 60V 75A STRONGIRFET TO220AB, PK1260
    • 10:£0.6990
    • 100:£0.5020
    • 250:£0.4730
    • 500:£0.4440
    • 1100:£0.3570
    IRFB7546PBF
    DISTI # IRFB7546PBF    		Infineon Technologies AGTransistor: N-MOSFET,unipolar,60V,75A,99W,TO220AB58
    • 1:$0.6900
    • 3:$0.6400
    • 10:$0.5400
    • 100:$0.4700
    IRFB7546PBF
    DISTI # TMOSP12150    		Infineon Technologies AGN-CH 60V 53A 7,3mOhm TO220-3
    RoHS: Compliant    		Stock DE - 8000Stock US - 0
    • 50:$0.5562
    • 150:$0.5244
    • 300:$0.4926
    • 750:$0.4449
    • 1000:$0.4290
    IRFB7546PBF
    DISTI # IRFB7546PBF    		Infineon Technologies AGN-Ch 60V 75A 99W 0,0073R TO220AB
    RoHS: Compliant    		210
    • 10:€0.7325
    • 50:€0.4325
    • 200:€0.3325
    • 500:€0.3200
    IRFB7546PBF
    DISTI # C1S322000489233    		Infineon Technologies AGMOSFETs
    RoHS: Compliant    		1006
    • 1000:$0.4467
    • 500:$0.5403
    • 100:$0.5961
    • 10:$0.7265
    IRFB7546PBF
    DISTI # C1S327401067147    		Infineon Technologies AGTrans MOSFET N-CH 60V 75A 3-Pin(3+Tab) TO-220AB Tube
    RoHS: Compliant    		2050
    • 100:$0.5500
    • 50:$0.6300
    • 10:$0.9370
    • 5:$1.1500
    IRFB7546PBF
    DISTI # 2406519    		Infineon Technologies AGMOSFET, N CH, 60V, 75A, TO-220AB-3
    RoHS: Compliant    		1402
    • 1:$1.6800
    • 10:$1.4300
    • 100:$1.1100
    • 500:$0.9710
    • 1000:$0.7660
    • 2000:$0.6800
    • 10000:$0.6650
    IRFB7546PBF
    DISTI # 2406519    		Infineon Technologies AGMOSFET, N CH, 60V, 75A, TO-220AB-3
    RoHS: Compliant    		1410
    • 5:£0.7130
    • 25:£0.6980
    • 100:£0.5120
    • 250:£0.4820
    • 500:£0.4530
    图片 型号 描述
    MCP3008-I/P

    Mfr.#: MCP3008-I/P

    OMO.#: OMO-MCP3008-I-P

    		 Analog to Digital Converters - ADC 10-bit SPI 8 Chl IND TEMP, PDIP16
    SB130-E3/54

    Mfr.#: SB130-E3/54

    OMO.#: OMO-SB130-E3-54

    		 Schottky Diodes & Rectifiers 20 Volt 1.0 Amp 50 Amp IFSM
    2N3904

    Mfr.#: 2N3904

    OMO.#: OMO-2N3904

    		 Bipolar Transistors - BJT NPN Gen Pur SS
    TL084IN

    Mfr.#: TL084IN

    OMO.#: OMO-TL084IN

    		 Operational Amplifiers - Op Amps Quad Gen Purp JFET
    PC722A

    Mfr.#: PC722A

    OMO.#: OMO-PC722A

    		 DC Power Connectors 2.0mm Pin Strght PC Mnt Bushing L .21in
    TL084IN

    Mfr.#: TL084IN

    OMO.#: OMO-TL084IN-TEXAS-INSTRUMENTS

    		 Operational Amplifiers - Op Amps JFET Input
    22-28-4067

    Mfr.#: 22-28-4067

    OMO.#: OMO-22-28-4067-MOLEX

    		 Headers & Wire Housings KK 100 Hdr Assy Bkwy Bkwy 06 Ckt 30 SGold
    PC722A

    Mfr.#: PC722A

    OMO.#: OMO-PC722A-SWITCHCRAFT-CONXALL

    		 DC Power Connectors 2.1MM POWER JACK
    MCP3008-I/P

    Mfr.#: MCP3008-I/P

    OMO.#: OMO-MCP3008-I-P-MICROCHIP-TECHNOLOGY

    		 Analog to Digital Converters - ADC 10-bit SPI 8 Chl IND TEMP, PDIP16
    MBA02040C3002FRP00

    Mfr.#: MBA02040C3002FRP00

    OMO.#: OMO-MBA02040C3002FRP00-VISHAY

    		 Thin Film Resistors - Through Hole .4watt 30Kohms 1% 1/8watt body size
    可用性
    库存:
    Available
    订购:
    1984
    输入数量:
    IRFB7546PBF的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
    参考价格（美元）
    数量
    单价
    小计金额
    1
    US$0.98
    US$0.98
    10
    US$0.84
    US$8.39
    100
    US$0.64
    US$64.50
    500
    US$0.57
    US$285.00
    1000
    US$0.45
    US$449.00
    2000
    US$0.43
    US$858.00
    由于2021年半导体供不应求，低于2021年之前的正常价格，请发询价确认。
    从...开始
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