55GN01CA-TB-E

55GN01CA-TB-E
Mfr. #:
55GN01CA-TB-E
制造商:
ON Semiconductor
描述:
RF Bipolar Transistors SWITCHING DEVICE
生命周期:
制造商新产品。
数据表:
55GN01CA-TB-E 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
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ECAD Model:
产品属性
属性值
制造商:
安森美半导体
产品分类:
射频双极晶体管
RoHS:
Y
系列:
55GN01CA
晶体管类型:
双极电源
技术:
晶体管极性:
NPN
DC 集电极/基极增益 hfe 最小值:
100
集电极-发射极电压 VCEO 最大值:
10 V
发射极基极电压 VEBO:
3 V
连续集电极电流:
5 mA
最低工作温度:
+ 25 C
最高工作温度:
+ 150 C
配置:
单身的
安装方式:
贴片/贴片
包装/案例:
CP-3
打包:
卷轴
集电极-基极电压 VCBO:
20 V
直流电流增益 hFE 最大值:
180
高度:
1.1 mm
长度:
2.9 mm
工作频率:
5.5 GHz
工作温度范围:
+ 25 C to + 150 C
类型:
射频双极电源
宽度:
1.5 mm
品牌:
安森美半导体
增益带宽积 fT:
4.5 GHz
最大直流集电极电流:
70 mA
Pd - 功耗:
200 mW
产品类别:
射频双极晶体管
出厂包装数量:
3000
子类别:
晶体管
Tags
55GN01C, 55GN0, 55GN, 55G
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***r Electronics
RF Small Signal Bipolar Transistor, 0.07A I(C), 1-Element, C Band, Silicon, NPN, TO-236AB
***emi
RF Transistor, NPN Single, 10 V, 70 mA, fT = 5.5 GHz
***ure Electronics
55GN01CA Series NPN 10 V 200 mW 70 mA UHF Wide-Band Low Noise Amplifier - CP-3
***(Formerly Allied Electronics)
ON Semi 55GN01CA-TB-E NPN RF Bipolar Transistor, 0.07 A, 10 V, 3-Pin CP | ON Semiconductor 55GN01CA-TB-E
***ark
RF Transistor, 10V, 70mA, fT=5.5GHz, NPN Single CP / REEL
***emi
RF Transistor, NPN Single CP, 10 V, 70 mA, fT = 1.5 GHz
***ark
RF Transistor, 10V, 70mA, fT=1.5GHz, NPN Single CP / REEL
***ical
Trans RF BJT NPN 10V 0.07A 200mW 3-Pin SC-59 T/R
***r Electronics
RF Small Signal Bipolar Transistor
***el Electronic
Current & Power Monitors & Regulators High-Side Power and Current Monitor
***ure Electronics
PBR941 Series 8 GHz 10 V 360 mW UHF Wideband NPN Transistor - SOT23-3
***ical
Trans RF BJT NPN 10V 0.05A 360mW 3-Pin TO-236AB T/R
***ark
RF WIDEBAND TRANSISTOR, NPN, 10V, 8GHZ, 3-SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage Max:10V; Transition Frequency:8GHz; Power Dissipation:360mW; Continuous Collector Current:50mA; No. of Pins:3Pins; Product Range:- RoHS Compliant: Yes
***emi
RF Transistor, NPN Single CP, 8 V, 50 mA, fT=1.5 GHz
***et
Trans GP BJT NPN 8V 0.05A 3-Pin CP T/R
***S
NPN SMALL SGNL TRANSISTOR 600mA 40V hFE=20~300 SOT-23 Leaded
***eco
MMBT4401-7,BIPOLAR TRANSISTOR NPN SOT-23 3K
***Yang
Trans GP BJT NPN 40V 0.6A Automotive 3-Pin SOT-23 T/R
***essParts.Net
DIODES INC MMBT4401-7 / TRANS NPN 40V 350MW SMD SOT-23 DIODE INC
***ure Electronics
BFU550A Series 12V 50mA 450mW NPN Wideband Silicon RF Transistor - 236AB (SOT23)
***icontronic
RF Small Signal Bipolar Transistor, 0.08A I(C), 1-Element, L Band, Silicon, NPN, TO-236AB
***ical
Trans RF BJT NPN 16V 0.08A 450mW Automotive 3-Pin TO-236AB T/R
***ukat
NPN-HF 12V 50mA 450mW 11GHz SOT23
***W
RF Transistor, 2 GHz, 18 dB, 0.6 dB NF, 3 Pin SOT23, Silicon
***et
Trans GP NPN 12V 0.05A 3-Pin SOT-23 T/R
***nell
RF TRANSISTOR, AEC-Q101, NPN, 12V, SOT23; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 12V; Transition Frequency ft: 11GHz; Power Dissipation Pd: 450mW; DC Collector Current: 50mA; DC Current Gain hFE: 60hFE; RF Transistor Case: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
***ure Electronics
FMMT Series NPN 500 mW 30 V 1 A Surface Mount Small Signal Transistor - SOT-23
***r Electronics
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***Yang
Trans GP BJT NPN 30V 1A 3-Pin SuperSOT T/R - Tape and Reel
***rchild Semiconductor
These devices are designed with high current gain and low saturation voltage with collector currents up to 2 A continuous. Sourced from Process NB.
型号 制造商 描述 库存 价格
55GN01CA-TB-E
DISTI # V72:2272_07322767
ON SemiconductorTrans RF BJT NPN 10V 0.07A 3-Pin CP T/R
RoHS: Compliant
5985
  • 3000:$0.0404
  • 1000:$0.0895
  • 500:$0.0937
  • 250:$0.1041
  • 100:$0.1156
  • 25:$0.2488
  • 10:$0.2764
  • 1:$0.4275
55GN01CA-TB-E
DISTI # 55GN01CA-TB-EOSCT-ND
ON SemiconductorRF TRANS NPN 10V 4.5GHZ 3CP
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
5980In Stock
  • 1000:$0.1003
  • 500:$0.1308
  • 100:$0.1974
  • 10:$0.3490
  • 1:$0.4700
55GN01CA-TB-E
DISTI # 55GN01CA-TB-EOSDKR-ND
ON SemiconductorRF TRANS NPN 10V 4.5GHZ 3CP
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
5980In Stock
  • 1000:$0.1003
  • 500:$0.1308
  • 100:$0.1974
  • 10:$0.3490
  • 1:$0.4700
55GN01CA-TB-E
DISTI # 55GN01CA-TB-EOSTR-ND
ON SemiconductorRF TRANS NPN 10V 4.5GHZ 3CP
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
3000In Stock
  • 75000:$0.0564
  • 30000:$0.0635
  • 15000:$0.0677
  • 6000:$0.0762
  • 3000:$0.0846
55GN01CA-TB-E
DISTI # 25775832
ON SemiconductorTrans RF BJT NPN 10V 0.07A 3-Pin CP T/R
RoHS: Compliant
5985
  • 3000:$0.0404
  • 1000:$0.0895
  • 500:$0.0937
  • 250:$0.1041
  • 143:$0.1156
55GN01CA-TB-E
DISTI # 55GN01CA-TB-E
ON SemiconductorTrans GP BJT NPN 10V 0.07A 3-Pin CP T/R (Alt: 55GN01CA-TB-E)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel
Europe - 0
  • 3000:€0.0861
  • 6000:€0.0650
  • 12000:€0.0592
  • 18000:€0.0530
  • 30000:€0.0500
55GN01CA-TB-E
DISTI # 55GN01CA-TB-E
ON SemiconductorTrans GP BJT NPN 10V 0.07A 3-Pin CP T/R - Tape and Reel (Alt: 55GN01CA-TB-E)
RoHS: Compliant
Min Qty: 9000
Container: Reel
Americas - 0
  • 9000:$0.0480
  • 15000:$0.0477
  • 24000:$0.0471
  • 45000:$0.0465
  • 90000:$0.0454
55GN01CA-TB-E
DISTI # 55GN01CA-TB-E
ON SemiconductorTrans GP BJT NPN 10V 0.07A 3-Pin CP T/R (Alt: 55GN01CA-TB-E)
RoHS: Compliant
Min Qty: 9000
Container: Tape and Reel
Asia - 0
  • 9000:$0.0700
  • 18000:$0.0673
  • 27000:$0.0648
  • 45000:$0.0625
  • 90000:$0.0603
  • 225000:$0.0583
  • 450000:$0.0574
55GN01CA-TB-E
DISTI # 70341726
ON SemiconductorON Semi 55GN01CA-TB-E NPN RF Bipolar Transistor,0.07 A,10 V,3-Pin CP
RoHS: Compliant
0
  • 100:$0.0840
  • 250:$0.0800
  • 500:$0.0760
  • 1000:$0.0720
55GN01CA-TB-E
DISTI # 863-55GN01CA-TB-E
ON SemiconductorRF Bipolar Transistors SWITCHING DEVICE
RoHS: Compliant
8884
  • 1:$0.4500
  • 10:$0.2910
  • 100:$0.1250
  • 1000:$0.0960
  • 3000:$0.0730
  • 9000:$0.0650
  • 24000:$0.0610
  • 45000:$0.0540
  • 99000:$0.0520
55GN01CA-TB-EON Semiconductor 
RoHS: Not Compliant
68926
  • 500:$0.0900
  • 1000:$0.0900
  • 25:$0.1000
  • 100:$0.1000
  • 1:$0.1100
55GN01CA-TB-E
DISTI # 7925212P
ON SemiconductorTRANSISTOR NPN 10V 70MA UHF LOWNOISE CP3, RL5550
  • 100:£0.0930
55GN01CA-TB-E
DISTI # C1S541900658033
ON SemiconductorTrans GP BJT NPN 10V 0.07A 3-Pin CP T/R
RoHS: Compliant
5985
  • 250:$0.1041
  • 100:$0.1156
  • 25:$0.2488
图片 型号 描述
24LC32AT-I/OT

Mfr.#: 24LC32AT-I/OT

OMO.#: OMO-24LC32AT-I-OT

EEPROM 32K 4K X 8 2.5V SER EE IND
CMDSH-3 TR

Mfr.#: CMDSH-3 TR

OMO.#: OMO-CMDSH-3-TR

Schottky Diodes & Rectifiers 30V Schottky
MCH3484-TL-W

Mfr.#: MCH3484-TL-W

OMO.#: OMO-MCH3484-TL-W

MOSFET NCH 0.9V DRIVE SERIE
2SC5086-O,LF

Mfr.#: 2SC5086-O,LF

OMO.#: OMO-2SC5086-O-LF

RF Bipolar Transistors Radio-Frequency Bipolar Transistor
MCH3484-TL-W

Mfr.#: MCH3484-TL-W

OMO.#: OMO-MCH3484-TL-W-ON-SEMICONDUCTOR

MOSFET N-CH 20V 4.5A MCPH3
24LC32AT-I/OT

Mfr.#: 24LC32AT-I/OT

OMO.#: OMO-24LC32AT-I-OT-MICROCHIP-TECHNOLOGY

IC EEPROM 32K I2C SOT23-5
CMDSH-3 TR

Mfr.#: CMDSH-3 TR

OMO.#: OMO-CMDSH-3-TR-CENTRAL-SEMICONDUCTOR

Schottky Diodes & Rectifiers 30V Schottky
2SC5086-O,LF

Mfr.#: 2SC5086-O,LF

OMO.#: OMO-2SC5086-O-LF-TOSHIBA-SEMICONDUCTOR-AND-STOR

RF Bipolar Transistors Radio-Frequency Bipolar Transisto
可用性
库存:
Available
订购:
1991
输入数量:
55GN01CA-TB-E的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格(美元)
数量
单价
小计金额
1
US$0.45
US$0.45
10
US$0.29
US$2.91
100
US$0.12
US$12.50
1000
US$0.10
US$96.00
由于2021年半导体供不应求,低于2021年之前的正常价格,请发询价确认。
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