T1G4004532-FL

Mfr. #:: T1G4004532-FL
制造商:: Qorvo
描述:: RF JFET Transistors DC-35.GHz GaN 45w 32v Gain >19dB
生命周期:: 制造商新产品。
数据表:: T1G4004532-FL 数据表
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更多信息:: T1G4004532-FL 更多信息

产品属性
属性值

制造商：: 科沃

产品分类：: 射频 JFET 晶体管

RoHS：: Y

技术：: 氮化镓碳化硅

Vds - 漏源击穿电压：: 32 V

Vgs - 栅源击穿电压：: 100 V

Pd - 功耗：: 45 W

安装方式：: 贴片/贴片

打包：: 托盘

配置：: 单身的

高度：: 4.064 mm

长度：: 20.3 mm

宽度：: 5.842 mm

品牌：: 科沃

栅源截止电压：: - 2.9 V

湿气敏感：: 是的

产品类别：: 射频 JFET 晶体管

出厂包装数量：: 36

子类别：: 晶体管

第 # 部分别名：: 1092442

Tags: T1G4004, T1G400, T1G4, T1G

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

T1G4004532-FL 描述

***W: RF Power Transistor, DC to 3.5 GHz, 45 W, 19 dB, 32V, GaN

T1G4004532-FL 更多信息

T1G4004532 GaN RF Power Transistors: Qorvo T1G4004532 GaN RF Power Transistors are 45W (P3dB) discrete GaN on SiC HEMT which operates from DC to 3.5GHz. The device is constructed with Qorvo's proven TQGaN25 process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs. Lead-free and ROHS compliant.Learn More

QPD GaN RF Transistors: Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.

Market price

型号	制造商	描述	库存	价格
T1G4004532-FL DISTI # 772-T1G4004532-FL	Qorvo	RF JFET Transistors DC-35.GHz GaN 45w 32v Gain >19dB RoHS: Compliant	30	1:$240.0000 25:$216.6000

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