MR25H10MDCR

Mfr. #:: MR25H10MDCR
制造商:: Everspin Technologies
描述:: NVRAM 1Mb 3V 128Kx8 Serial MRAM
生命周期:: 制造商新产品。
数据表:: MR25H10MDCR 数据表
交货:: DHL FedEx Ups TNT EMS
支付:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:: MR25H10MDCR 更多信息

产品属性
属性值

制造商: Everspin 技术公司

产品分类: 记忆

系列: Automotive, AEC-Q100

打包: 卷带 (TR) 替代包装

单位重量: 0.001319 oz

安装方式: 贴片/贴片

包装盒: DFN-8

工作温度: -40°C ~ 125°C (TA)

界面: SPI 串行

电压供应: 2.7 V ~ 3.6 V

供应商-设备-包: 8-DFN-EP, Large Flag (5x6)

内存大小: 1M (128K x 8)

内存型: MRAM（磁阻RAM）

速度: 40MHz

格式化内存: 内存

最高工作温度: + 125 C

最低工作温度: - 40 C

接口类型: SPI

组织: 128 k x 8

最大电源电压: 3.6 V

电源电压最小值: 2.7 V

Tags: MR25H10M, MR25H10, MR25H1, MR25H, MR25, MR2

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

MR25H10MDCR 评级和评论

V***v

The description corresponds. The driver on ch340g had to look.

2019-07-04

E**y

Order received very quickly. Nicely Packed. Will test and update the quality. Seems very good

2019-08-20

MR25H10MDCR 描述

***i-Key: IC RAM 1M SPI 40MHZ 8DFN

MR25H10MDCR 更多信息

Serial SPI MRAMs: Everspin Technologies MR25H256 / MR25H10 /MRH25H128 / MR25H40 SPI Serial MRAM devices offer serial EEPROM and serial Flash compatible read/write timing with no write delays and unlimited read/write endurance. Unlike other serial memories, both reads and writes can occur randomly in memory with no delay between writes.

Magnetoresistive Random Access Memory (MRAM): Everspin Technologies Magnetoresistive Random Access Memory (MRAM) uses a 1 Transistor – 1 Magnetic Tunnel Junction (1T-1MTJ) architecture. These MRAM devices offer significantly long Data Retention (20+ years) and unlimited endurance. The data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification.

Market price

型号	制造商	描述	库存	价格
MR25H10MDCR DISTI # MR25H10MDCR-ND	Everspin Technologies	IC RAM 1M SPI 40MHZ 8DFN RoHS: Compliant Min Qty: 4000 Container: Tape & Reel (TR)	Limited Supply - Call	4000:$6.6101
MR25H10MDCR DISTI # MR25H10MDCR	Everspin Technologies	NVRAM MRAM Serial-SPI 1M-Bit 3.3V 8-Pin DFN EP T/R (Alt: MR25H10MDCR) RoHS: Compliant Min Qty: 4000 Container: Tape and Reel	Europe - 0	4000:€7.2900 8000:€6.9900 16000:€6.6900 24000:€6.1900 40000:€5.7900
MR25H10MDC DISTI # 936-MR25H10MDC	Everspin Technologies	NVRAM 1Mb 3V 128Kx8 Serial MRAM RoHS: Compliant	2070	1:$9.1000 10:$8.3700 25:$8.2000 50:$8.1700 100:$7.3300 250:$7.1100 500:$6.7600 1000:$6.5200
MR25H10MDCR DISTI # 936-MR25H10MDCR	Everspin Technologies	NVRAM 1Mb 3V 128Kx8 Serial MRAM RoHS: Compliant	0

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