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RGTH00TS65GC11

RGTH00TS65GC11
Mfr. #:
RGTH00TS65GC11
制造商:
Rohm Semiconductor
描述:
IGBT Transistors 650V 50A IGBT Stop Trench
生命周期:
制造商新产品。
数据表:
RGTH00TS65GC11 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
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ECAD Model:
更多信息:
RGTH00TS65GC11 更多信息
产品属性
属性值
制造商：
罗姆半导体
产品分类：
IGBT晶体管
RoHS：
Y
技术：
硅
包装/案例：
TO-247-3
安装方式：
通孔
集电极-发射极电压 VCEO 最大值：
650 V
集电极-发射极饱和电压：
1.6 V
最大栅极发射极电压：
30 V
25 C 时的连续集电极电流：
85 A
Pd - 功耗：
277 W
最低工作温度：
- 40 C
最高工作温度：
+ 175 C
系列：
RGTH00TS65
打包：
管子
连续集电极电流 Ic 最大值：
85 A
工作温度范围：
- 40 C to + 175 C
品牌：
罗姆半导体
连续集电极电流：
50 A
栅极-发射极漏电流：
+/- 200 nA
产品类别：
IGBT晶体管
出厂包装数量：
450
子类别：
IGBT
第 # 部分别名：
RGTH00TS65
单位重量：
1.340411 oz
Tags
RGTH00TS, RGTH0, RGTH, RGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans IGBT Chip N-CH 650V 85A 3-Pin TO-247N Tube
***ark
Igbt, Single, 650V, 85A, To-247N-3 Rohs Compliant: Yes
***nell
IGBT, SINGLE, 650V, 85A, TO-247N-3; DC Collector Current: 85A; Collector Emitter Saturation Voltage Vce(on): 1.6V; Power Dissipation Pd: 277W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-247N; No. of P
***i-Key
IGBT TRNCH FIELD 650V 85A TO247N
***ical
Trans IGBT Chip N-CH 650V 80A 283000mW 3-Pin(3+Tab) TO-247 Tube
***icroelectronics
Trench gate field-stop IGBT, HB series 650 V, 40 A high speed
***r Electronics
Insulated Gate Bipolar Transistor, 80A I(C), 650V V(BR)CES, N-Channel, TO-247
***ark
Transistor, Igbt, 650V, 80A, To-247 Rohs Compliant: Yes
*** Electronic Components
IGBT Transistors 650V 40A Trench Gate Field-Stop IGBT
***(Formerly Allied Electronics)
IGBT N-Ch 650V 40A High-Speed TO247
***icroelectronics SCT
Short-circuit rugged IGBT, TO-247, Tube
*** Services
CoC and 2-years warranty / RFQ for pricing
***id Electronics
ST MICROELECTRONICS STGW40H65FB
***ure Electronics
NGTB Series 650 V 60 A Flange Mount Trench Field Stop IGBT - TO-247
***et
Trans IGBT Chip N-CH 650V 60A 3-Pin TO-247 Tube
***emi
IGBT, 650V 30A FS2 Induction Heating
***ark
650V/30A FAST IGBT FSII TO-247 / TUBE ROHS COMPLIANT: YES
***r Electronics
Insulated Gate Bipolar Transistor, 60A I(C), 650V V(BR)CES, N-Channel
***i-Key
IGBT TRENCH/FS 650V 60A TO247-3
***icroelectronics
Trench gate field-stop IGBT, HB series 650 V, 60 A high speed
***ical
Trans IGBT Chip N-CH 650V 80A 375000mW 3-Pin(3+Tab) TO-247 Tube
***nell
IGBT, SINGLE, 650V, 80A, TO-247-3; DC Collector Current: 80A; Collector Emitter Saturation Voltage Vce(on): 1.6V; Power Dissipation Pd: 375W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-247; No. of Pin
***ical
Trans IGBT Chip N-CH 650V 74A 255000mW 3-Pin(3+Tab) TO-247 Tube
***nell
IGBT, 650V, 40A, TO220-3; DC Collector Current: 40A; Collector Emitter Saturation Voltage Vce(on): 1.65V; Power Dissipation Pd: 255W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-220; No. of Pins: 3Pins;
***ineon SCT
Infineon’s new TRENCHSTOP™5 IGBT technology redefines “Best-in-class” IGBT by providing unmatched performance in terms of efficiency for hard switching applications, PG-TO220-3, RoHS
***ineon
Infineons new TRENCHSTOP5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the markets high efficiency demands of tomorrow. | Summary of Features: 650V breakthrough voltage; Compared to Infineons Best-in-class HighSpeed 3 family; Factor 2.5 lower Q g; Factor 2 reduction in switching losses; 200mV reduction in V CE(sat); Low C OES/E OSS; Mild positive temperature coefficient V CE(sat); Temperature stability of V f | Benefits: Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability; 50V increase in the bus voltage possible without compromising reliability; Higher power density design | Target Applications: Uninterruptible Power Supplies; Welding
***ical
Trans IGBT Chip N-CH 650V 80A 283000mW 3-Pin(3+Tab) TO-247 Tube
***icroelectronics
Trench gate field-stop IGBT, HB series 650 V, 40 A high speed
***nell
IGBT, SINGLE, 650V, 80A, TO-247; DC Collector Current: 80A; Collector Emitter Saturation Voltage Vce(on): 1.6V; Power Dissipation Pd: 283W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-247; No. of Pins:
***ical
Trans IGBT Chip N=-CH 650V 80A 305000mW 3-Pin(3+Tab) TO-247 Tube
*** Source Electronics
650V DuoPack IGBT and Diode High speed switching series fifth generation
***ineon SCT
650 V IGBT with anti-parallel diode in TO-247 package, PG-TO247-3, RoHS
***nell
IGBT, 650V, 50A, TO247-3; DC Collector Current: 50A; Collector Emitter Saturation Voltage Vce(on): 1.65V; Power Dissipation Pd: 305W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-247; No. of Pins: 3Pins;
***ineon
Infineons new TRENCHSTOP5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the markets high efficiency demands of tomorrow. | Summary of Features: 650V breakthrough voltage; Compared to Infineons best-in-class HighSpeed 3 family; Factor 2.5 lower Q g; Factor 2 reduction in switching losses; 200mV reduction in V CE(sat); Co-packed with Infineons new Rapid Si-diode technology; Low C OES/E OSS; Mild positive temperature coefficient V CE(sat); Temperature stability of V f | Benefits: Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability; 50V increase in the bus voltage possible without compromising reliability; Higher power density design | Target Applications: Uninterruptible Power Supplies; Welding
Field Stop Trench IGBTs
ROHM Field Stop Trench IGBTs are energy saving high-efficiency IGBTs used in a wide range of high-voltage and high-current applications. These IGBTs feature a low collector and emitter saturation voltage, short-circuit withstand time, and built-in very fast & soft recovery FRD. The field stop trench IGBTs are ideal for UPS, power conditioner, welder, and general inverters for industrial use.
型号 制造商 描述 库存 价格
RGTH00TS65GC11
DISTI # RGTH00TS65GC11-ND		ROHM SemiconductorIGBT 650V 85A 277W TO-247N
RoHS: Compliant
Min Qty: 1
Container: Tube		256In Stock
  • 2520:$1.9740
  • 510:$2.3406
  • 120:$2.7495
  • 30:$3.1727
  • 10:$3.3560
  • 1:$3.7400
RGTH00TS65GC11
DISTI # RGTH00TS65GC11		ROHM SemiconductorTrans IGBT Chip N-CH 650V 85A 3-Pin TO-247N Tube - Rail/Tube (Alt: RGTH00TS65GC11)
RoHS: Compliant
Min Qty: 450
Container: Tube		Americas - 0
  • 2700:$1.7900
  • 4500:$1.7900
  • 1800:$1.8900
  • 900:$1.9900
  • 450:$2.1900
RGTH00TS65GC11
DISTI # 755-RGTH00TS65GC11		ROHM SemiconductorIGBT Transistors 650V 50A IGBT Stop Trench
RoHS: Compliant		409
  • 1:$3.7400
  • 10:$3.1800
  • 100:$2.7500
  • 250:$2.6100
  • 500:$2.3500
  • 1000:$1.9800
  • 2500:$1.8800
RGTH00TS65GC11ROHM Semiconductor*** FREE SHIPPING ORDERS OVER $100 ***24
  • 19:$3.8800
  • 6:$4.2680
  • 1:$5.8200
RGTH00TS65GC11
DISTI # 1486976		ROHM SemiconductorIGBT N-CHANNEL 85A 650V TRENCH TO-247, PK15
  • 500:£1.9700
  • 250:£2.0860
  • 100:£2.2320
  • 25:£2.5500
  • 5:£2.8980
RGTH00TS65GC11
DISTI # 2519787		ROHM SemiconductorIGBT, SINGLE, 650V, 85A, TO-247N-3
RoHS: Compliant		4
  • 510:$3.5500
  • 270:$3.9600
  • 120:$4.1800
  • 30:$4.8200
  • 10:$5.0900
  • 1:$5.6700
RGTH00TS65GC11
DISTI # 2519787		ROHM SemiconductorIGBT, SINGLE, 650V, 85A, TO-247N-3
RoHS: Compliant		4
  • 500:£1.6500
  • 250:£1.8300
  • 100:£1.9300
  • 10:£2.2300
  • 1:£2.9400
RGTH00TS65GC11ROHM Semiconductor 450
  • 1:¥44.2642
  • 100:¥25.0978
  • 450:¥15.9120
RGTH00TS65GC11ROHM SemiconductorIGBT Transistors 650V 50A IGBT Stop Trench
RoHS: Compliant		Americas -
    RGTH00TS65GC11ROHM SemiconductorRoHS(ship within 1day)30
    • 1:$3.8200
    • 10:$2.8600
    • 50:$2.5200
    • 100:$2.1500
    • 500:$2.0000
    • 1000:$1.9400
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    可用性
    库存:
    389
    订购:
    2372
    输入数量:
    RGTH00TS65GC11的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
    参考价格（美元）
    数量
    单价
    小计金额
    1
    US$3.74
    US$3.74
    10
    US$3.18
    US$31.80
    100
    US$2.75
    US$275.00
    250
    US$2.61
    US$652.50
    500
    US$2.35
    US$1 175.00
    1000
    US$1.98
    US$1 980.00
    2500
    US$1.88
    US$4 700.00
    5000
    US$1.81
    US$9 050.00
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