IPA057N08N3 G

Mfr. #:: IPA057N08N3 G
制造商:: Infineon Technologies
描述:: Darlington Transistors MOSFET N-Ch 80V 60A TO220FP-3 OptiMOS 3
生命周期:: 制造商新产品。
数据表:: IPA057N08N3 G 数据表
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更多信息:: IPA057N08N3 G 更多信息

产品属性
属性值

制造商: 英飞凌科技

产品分类: 晶体管 - FET、MOSFET - 单

系列: OptiMOS 3

打包: 管子

部分别名: IPA057N08N3GXK IPA057N08N3GXKSA1 SP000454442

单位重量: 0.211644 oz

安装方式: 通孔

商品名: 优化MOS

包装盒: TO-220-3

技术: 硅

通道数: 1 Channel

配置: 单身的

晶体管型: 1 N-Channel

钯功耗: 39 W

最高工作温度: + 175 C

最低工作温度: - 55 C

秋季时间: 9 ns

上升时间: 42 ns

VGS-栅极-源极-电压: 20 V

Id 连续漏极电流: 60 A

Vds-漏-源-击穿电压: 80 V

Rds-On-Drain-Source-Resistance: 5.7 mOhms

晶体管极性: N通道

典型关断延迟时间: 36 ns

典型开启延迟时间: 17 ns

Qg-门电荷: 18 nC

通道模式: 增强

Tags: IPA057N08N3G, IPA057N08N3, IPA057N08, IPA057, IPA05, IPA0, IPA

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPA057N08N3 G 更多信息

CoolMOS™ N-Channel MOSFETs: Infineon CoolMOS™ N-Channel Power MOSFETs set the standard for high performance and energy efficiency. The Infineon OptiMOS low voltage MOSFET family demonstrates a combination of the industry's lowest on-state resistance and best switching performance in the voltage range from 20V up to 250V. The new OptiMOS 25V and 30V product family sets new standards in power density and energy efficiency for discrete power MOSFETs. These devices are application-specific optimized for power supplies of servers, notebooks, telecom / datacom switches, and more. The revolutionary Infineon CoolMOS power family sets new standards in energy efficiency and is a technology leader in high voltage MOSFETs. The CoolMOS offers a significant reduction of conduction and switching losses and enables high power density and efficiency for superior power conversion systems. CoolMOS C6 / E6 Power MOSFETs combine the advantage of state-of-the-art superjunction devices with the strengths of conventional power semiconductors. Infineon Technologies CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.

Market price

型号	制造商	描述	库存	价格
IPA057N08N3GXKSA1 DISTI # IPA057N08N3GXKSA1-ND	Infineon Technologies AG	MOSFET N-CH 80V 60A TO220-3 RoHS: Compliant Min Qty: 1 Container: Tube	976In Stock	1000:$1.1379 500:$1.3483 100:$1.6989 10:$2.0850 1:$2.2900
IPA057N08N3 G DISTI # IPA057N08N3 G	Infineon Technologies AG	Trans MOSFET N-CH 80V 60A 3-Pin(3+Tab) TO-220FP (Alt: IPA057N08N3 G) RoHS: Compliant Min Qty: 500	Asia - 1000	500:$1.0080 1000:$0.9666 1500:$0.9535 2500:$0.9164 5000:$0.9046 12500:$0.8820 25000:$0.8605
IPA057N08N3 G DISTI # SP000454442	Infineon Technologies AG	Trans MOSFET N-CH 80V 60A 3-Pin(3+Tab) TO-220FP (Alt: SP000454442) RoHS: Compliant Min Qty: 1	Europe - 0	1:€1.0749 10:€0.9549 25:€0.8599 50:€0.7819 100:€0.7159 500:€0.6609 1000:€0.6139
IPA057N08N3GXK DISTI # IPA057N08N3GXKSA1	Infineon Technologies AG	Trans MOSFET N-CH 80V 60A 3-Pin(3+Tab) TO-220FP - Rail/Tube (Alt: IPA057N08N3GXKSA1) RoHS: Compliant Min Qty: 1000 Container: Tube	Americas - 0	1000:$0.7339 2000:$0.7079 3000:$0.6819 5000:$0.6589 10000:$0.6479
IPA057N08N3GXKSA1 DISTI # 34AC1645	Infineon Technologies AG	MOSFET, N-CH, 80V, 60A, TO-220FP,Transistor Polarity:N Channel,Continuous Drain Current Id:60A,Drain Source Voltage Vds:80V,On Resistance Rds(on):0.0049ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.8V,Power RoHS Compliant: Yes	860	1:$1.7500 10:$1.4900 100:$1.1900 500:$1.1000 1000:$0.9880 2500:$0.8020 5000:$0.7760
IPA057N08N3 G DISTI # 726-IPA057N08N3G	Infineon Technologies AG	MOSFET N-Ch 80V 60A TO220FP-3 OptiMOS 3 RoHS: Compliant	440	1:$1.8800 10:$1.6000 100:$1.2800 500:$1.1200
IPA057N08N3G	Infineon Technologies AG	Power Field-Effect Transistor, 60A I(D), 80V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Compliant	437	1000:$0.8000 500:$0.8500 100:$0.8800 25:$0.9200 1:$0.9900
IPA057N08N3GXKSA1 DISTI # 8922107P	Infineon Technologies AG	MOSFET N-CHANNEL 80V 60A TO220-3 FP, TU	315	15:£1.1080 30:£1.0700 60:£1.0320 120:£0.8820
IPA057N08N3GXKSA1 DISTI # IPA057N08N3GXKSA1	Infineon Technologies AG	Transistor: N-MOSFET,unipolar,80V,60A,39W,TO220FP	342	1:$1.4529 3:$1.2520 10:$1.0073 100:$0.8753 1000:$0.8150
IPA057N08N3G	Infineon Technologies AG	INSTOCK	118
IPA057N08N3GXKSA1 DISTI # 2781062	Infineon Technologies AG	MOSFET, N-CH, 80V, 60A, TO-220FP RoHS: Compliant	875	5:£1.1100 25:£1.0300 100:£0.8820 250:£0.8450 500:£0.8070
IPA057N08N3G	Infineon Technologies AG	80V,5.7m,60A,N-Channel Power MOSFET	100	1:$1.4000 100:$1.1700 500:$1.0300 1000:$1.0000
IPA057N08N3GXKSA1 DISTI # 2781062	Infineon Technologies AG	MOSFET, N-CH, 80V, 60A, TO-220FP RoHS: Compliant	860	5:$3.1100 25:$2.7100 100:$2.2100 250:$1.8700 500:$1.6100 1000:$1.5300 5000:$1.4500

图片	型号	描述
	Mfr.#: IPA057N08N3 G OMO.#: OMO-IPA057N08N3-G	MOSFET N-Ch 80V 60A TO220FP-3 OptiMOS 3
	Mfr.#: IPA057N06N3 G OMO.#: OMO-IPA057N06N3-G	MOSFET N-Ch 60V 60A TO220FP-3 OptiMOS 3
	Mfr.#: IPA057N06N3GXKSA1 OMO.#: OMO-IPA057N06N3GXKSA1	MOSFET N-Ch 60V 60A TO220FP-3 OptiMOS 3
	Mfr.#: IPA057N06N3GXKSA1 OMO.#: OMO-IPA057N06N3GXKSA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 60V 60A TO220-3-31
	Mfr.#: IPA057N08N3GXKSA1 OMO.#: OMO-IPA057N08N3GXKSA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 80V 60A TO220-3
	Mfr.#: IPA057N06N OMO.#: OMO-IPA057N06N-1190	全新原装
	Mfr.#: IPA057N06N3-G OMO.#: OMO-IPA057N06N3-G-1190	全新原装
	Mfr.#: IPA057N08N3 OMO.#: OMO-IPA057N08N3-1190	全新原装
	Mfr.#: IPA057N08N3G OMO.#: OMO-IPA057N08N3G-1190	Power Field-Effect Transistor, 60A I(D), 80V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
	Mfr.#: IPA057N08N3 G OMO.#: OMO-IPA057N08N3-G-124	Darlington Transistors MOSFET N-Ch 80V 60A TO220FP-3 OptiMOS 3

IPA057N08N3 G

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes