IDW30G65C5XKSA1

IDW30G65C5XKSA1
Mfr. #:
IDW30G65C5XKSA1
制造商:
Infineon Technologies
描述:
Schottky Diodes & Rectifiers SIC DIODES
生命周期:
制造商新产品。
数据表:
IDW30G65C5XKSA1 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:
IDW30G65C5XKSA1 更多信息
产品属性
属性值
制造商:
英飞凌
产品分类:
肖特基二极管和整流器
RoHS:
Y
产品:
肖特基碳化硅二极管
安装方式:
通孔
包装/案例:
TO-247-3
如果 - 正向电流:
30 A
Vrrm - 重复反向电压:
650 V
Vf - 正向电压:
1.5 V
Ifsm - 正向浪涌电流:
165 A
配置:
单身的
技术:
碳化硅
Ir - 反向电流:
1.6 uA
最低工作温度:
- 55 C
最高工作温度:
+ 175 C
系列:
冷却碳化硅
打包:
管子
品牌:
英飞凌科技
Pd - 功耗:
150 W
产品类别:
肖特基二极管和整流器
出厂包装数量:
240
子类别:
二极管和整流器
商品名:
冷却碳化硅
Vr - 反向电压:
650 V
第 # 部分别名:
IDW30G65C5 SP001632892
单位重量:
0.211644 oz
Tags
IDW30G6, IDW30G, IDW30, IDW3, IDW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
IDW30G65C5 Series 650 V 30 A Through Hole SiC Schottky Diode - TO-247-3
***ical
Diode Schottky 650V 30A 3-Pin(3+Tab) TO-247 Tube
***p One Stop Japan
Diode Schottky 650V 30A 3-Pin(3+Tab) TO-247
***et Europe
Diode Schottky 650V 30A 3-Pin TO-247 Tube
***o-Tech
SIC SCHOTTKY DIODE THINQ 650V 30A TO247
***i-Key
DIODE SCHOTTKY 650V 20A TO247-3
***ronik
SiC-D 650V 30A 1,5V TO247-3
***ukat
SiC-Schottky 650V 30A TO247
***ark
SIC SCHOTTKY DIODE, 650V, 30A, TO-247; Product Range:thinQ Series; Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:650V; Continuous Forward Current If:30A; Total Capacitive Charge Qc:42nC; Diode Case Style:TO-247; No.RoHS Compliant: Yes
***ment14 APAC
Prices include import duty and tax. SIC SCHOTTKY DIODE, 650V, 30A, TO-247; Product Range:thinQ Series; Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:650V; Continuous Forward Current If:30A; Total Capacitive Charge Qc:42nC; Diode Case Style:TO-247; No. of Pins:3 Pin; Junction Temperature Tj Max:175°C; Automotive Qualification Standard:-; SVHC:No SVHC (15-Jan-2019)
***nell
SIC SCHOTTKY DIODE, 30A, 650V, TO-247; Asortyment produktów:Seria thinQ 5G 650V; Konfiguracja diody:Pojedyncze; Powtarzalne napięcie wsteczne Vrrm, maks.:650V; Ciągły prąd przewodzenia If:30A; Całkowity ładunek pojemnościowy Qc:42nC; Rodzaj obudowy diody:TO-247; Liczba pinów:3 piny; Temperatura złącza Tj, maks.:175°C; Kwalifikacja motoryzacyjna:-; Substancje SVHC:No SVHC (27-Jun-2018); Liczba pinów:3piny/-ów; Napięcie przewodzenia VF, maks.:1.7V; Prąd przewodzenia If(AV):30A; Prąd udarowy przewodzenia Ifsm, maks.:165A; Technologia półprzewodnika:SiC; Temperatura robocza, maks.:175°C
***ineon
CoolSiC generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. Thanks to the more compact design and thinwafer technology, the new family of products shows improved efficiency over all load conditions, resulting from both the improved thermal characteristics and a lower figure of merit (Q c x V f). The new CoolSiC Generation 5 has been designed to complement our 650V CoolMOS families: this ensures meeting the most stringent application requirements in this voltage range. | Summary of Features: V br at 650V; Improved figure of merit (Q c x V f); No reverse recovery charge; Soft switching reverse recovery waveform; Temperature independent switching behavior; High operating temperature (T j max 175C); Improved surge capability; Pb-free lead plating | Benefits: Higher safety margin against overvoltage and complements CoolMOS offer; Improved efficiency over all load conditions; Increased efficiency compared to Silicon Diode alternatives; Reduced EMI compared to snappier Silicon diode reverse recovery waveform; Highly stable switching performance; Reduced cooling requirements; Reduced risks of thermal runaway; RoHS compliant; Very high quality and high volume manufacturing capability | Target Applications: Telecom/server SMPS; Solar; UPS; PC power; LED/LCD TV; Motor drives; HID lighting
CoolSiC™ Schottky Diodes
Infineon CoolSiC™ Schottky Diodes deliver high reliability, optimum efficiency, and industry-leading SiC performance. The Infineon comprehensive portfolio of Silicon Carbide (SiC) devices encompasses 600V and 650V to 1200V Schottky diodes. A much higher breakdown voltage can be reached in SiC material Schottky diodes.
型号 制造商 描述 库存 价格
IDW30G65C5XKSA1
DISTI # IDW30G65C5XKSA1-ND
Infineon Technologies AGDIODE SCHOTTKY 650V 30A TO247-3
RoHS: Compliant
Min Qty: 1
Container: Tube
877In Stock
  • 720:$8.2334
  • 240:$9.2555
  • 25:$10.5048
  • 10:$10.9590
  • 1:$11.9200
IDW30G65C5XKSA1
DISTI # SP001632892
Infineon Technologies AGSIC DIODES (Alt: SP001632892)
RoHS: Compliant
Min Qty: 1
Europe - 45
  • 1000:€6.2900
  • 500:€6.6900
  • 100:€6.9900
  • 50:€7.1900
  • 25:€7.4900
  • 10:€7.7900
  • 1:€8.4900
IDW30G65C5XKSA1
DISTI # IDW30G65C5XKSA1
Infineon Technologies AGSIC DIODES - Rail/Tube (Alt: IDW30G65C5XKSA1)
RoHS: Compliant
Min Qty: 240
Container: Tube
Americas - 0
  • 2400:$7.1900
  • 1440:$7.2900
  • 960:$7.5900
  • 480:$7.7900
  • 240:$8.0900
IDW30G65C5XKSA1
DISTI # 726-IDW30G65C5XKSA1
Infineon Technologies AGSchottky Diodes & Rectifiers SIC DIODES
RoHS: Compliant
234
  • 1:$11.9100
  • 10:$10.9600
  • 25:$10.5100
  • 50:$10.5000
  • 100:$9.2500
  • 250:$8.8000
  • 500:$8.2300
图片 型号 描述
1EDN8550BXTSA1

Mfr.#: 1EDN8550BXTSA1

OMO.#: OMO-1EDN8550BXTSA1

Gate Drivers DRIVER IC
FFSH50120A

Mfr.#: FFSH50120A

OMO.#: OMO-FFSH50120A

Schottky Diodes & Rectifiers 1200V 10A SIC SBD
TWW5J3R9E

Mfr.#: TWW5J3R9E

OMO.#: OMO-TWW5J3R9E

Wirewound Resistors - Through Hole 5watt 3.9ohm 5% Vertical Mount
114991438

Mfr.#: 114991438

OMO.#: OMO-114991438

Interface Development Tools OBD-II CAN-BUS Development Kit
82635AWGDVKPRQ

Mfr.#: 82635AWGDVKPRQ

OMO.#: OMO-82635AWGDVKPRQ

Video Modules Real Sense Depth Camera D435
C1812X103KDRACAUTO

Mfr.#: C1812X103KDRACAUTO

OMO.#: OMO-C1812X103KDRACAUTO

Multilayer Ceramic Capacitors MLCC - SMD/SMT 1kV .01uF X7R 10% Flex Term AEC-Q200
56100C

Mfr.#: 56100C

OMO.#: OMO-56100C-MURATA-POWER-SOLUTIONS

Current Transformer Sensors Current Transformers 100 turns 10A 20-37mH @1V 50kHz
82635AWGDVKPRQ

Mfr.#: 82635AWGDVKPRQ

OMO.#: OMO-82635AWGDVKPRQ-INTEL

CAMERA MOD 82635AWGDVKPRQ
TWW5J3R9E

Mfr.#: TWW5J3R9E

OMO.#: OMO-TWW5J3R9E-OHMITE

Wirewound Resistors - Through Hole 5watt 3.9ohm 5% Vertical Mount
1EDN8550BXTSA1

Mfr.#: 1EDN8550BXTSA1

OMO.#: OMO-1EDN8550BXTSA1-INFINEON-TECHNOLOGIES

DRIVER IC (Alt: SP001690388)
可用性
库存:
458
订购:
2441
输入数量:
IDW30G65C5XKSA1的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格(美元)
数量
单价
小计金额
1
US$11.91
US$11.91
10
US$10.96
US$109.60
25
US$10.51
US$262.75
50
US$10.50
US$525.00
100
US$9.25
US$925.00
250
US$8.80
US$2 200.00
500
US$8.23
US$4 115.00
由于2021年半导体供不应求,低于2021年之前的正常价格,请发询价确认。
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