SI1419DH-T1-E3

SI1419DH-T1-E3
Mfr. #:
SI1419DH-T1-E3
制造商:
Vishay
描述:
IGBT Transistors MOSFET 200V 0.38A 1.56W 5.0 ohms @ 10V
生命周期:
制造商新产品。
数据表:
SI1419DH-T1-E3 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
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ECAD Model:
产品属性
属性值
制造商
威世
产品分类
FET - 单
Tags
SI141, SI14, SI1
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***eco
P-CH MOSFET SC-70-6 (SOT-363) 200V 5OHMS @ 10V
***i-Key
MOSFET P-CH 200V 0.3A SC70-6
***ark
Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:-380mA; Drain Source Voltage, Vds:-200V; On Resistance, Rds(on):5.1ohm; Rds(on) Test Voltage, Vgs:20V; Threshold Voltage, Vgs Typ:-4.5V; Power Dissipation, Pd:1W ;RoHS Compliant: Yes
型号 制造商 描述 库存 价格
SI1419DH-T1-E3
DISTI # SI1419DH-T1-E3TR-ND
Vishay SiliconixMOSFET P-CH 200V 0.3A SC70-6
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
Limited Supply - Call
    SI1419DH-T1-E3
    DISTI # SI1419DH-T1-E3CT-ND
    Vishay SiliconixMOSFET P-CH 200V 0.3A SC70-6
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    Limited Supply - Call
      SI1419DH-T1-E3
      DISTI # SI1419DH-T1-E3DKR-ND
      Vishay SiliconixMOSFET P-CH 200V 0.3A SC70-6
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®
      Limited Supply - Call
        SI1419DH-T1-E3
        DISTI # 09X6420
        Vishay IntertechnologiesMOSFET, P CHANNEL, -200V, -0.3A, SOT-363-6,Transistor Polarity:P Channel,Continuous Drain Current Id:-300mA,Drain Source Voltage Vds:-200V,On Resistance Rds(on):3.98ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-4.5V RoHS Compliant: Yes0
          SI1419DH-T1-E3
          DISTI # 781-SI1419DH-T1-E3
          Vishay IntertechnologiesMOSFET 200V 0.38A 1.56W 5.0 ohms @ 10V
          RoHS: Compliant
          0
            SI1419DH-T1-E3Vishay Intertechnologies 1037
              图片 型号 描述
              SI1419DH-T1-E3

              Mfr.#: SI1419DH-T1-E3

              OMO.#: OMO-SI1419DH-T1-E3-VISHAY

              IGBT Transistors MOSFET 200V 0.38A 1.56W 5.0 ohms @ 10V
              可用性
              库存:
              Available
              订购:
              2000
              输入数量:
              SI1419DH-T1-E3的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
              参考价格(美元)
              数量
              单价
              小计金额
              1
              US$0.00
              US$0.00
              10
              US$0.00
              US$0.00
              100
              US$0.00
              US$0.00
              500
              US$0.00
              US$0.00
              1000
              US$0.00
              US$0.00
              由于2021年半导体供不应求,低于2021年之前的正常价格,请发询价确认。
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