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| 型号 | 制造商 | 描述 | 库存 | 价格 |
|---|---|---|---|---|
| SI6433BDQ-T1-E3 DISTI # SI6433BDQ-T1-E3TR-ND | Vishay Siliconix | MOSFET P-CH 12V 4A 8-TSSOP RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| SI6433BDQ-T1-E3 DISTI # SI6433BDQ-T1-E3CT-ND | Vishay Siliconix | MOSFET P-CH 12V 4A 8-TSSOP RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | Limited Supply - Call | |
| SI6433BDQ-T1-E3 DISTI # SI6433BDQ-T1-E3DKR-ND | Vishay Siliconix | MOSFET P-CH 12V 4A 8-TSSOP RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | Limited Supply - Call | |
| SI6433BDQ-T1-E3 DISTI # 781-SI6433BDQ-T1-E3 | Vishay Intertechnologies | MOSFET 12V 4.8A 1.5W 40mohm @ 4.5V RoHS: Compliant | 0 | |
| SI6433BDQT1E3 | Vishay Intertechnologies | RoHS: Compliant | Europe - 9000 |
| 图片 | 型号 | 描述 |
|---|---|---|
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Mfr.#: SI6433BDQ-T1-E3 OMO.#: OMO-SI6433BDQ-T1-E3 |
MOSFET RECOMMENDED ALT 781-SI6423DQ-T1-GE3 |
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Mfr.#: SI6433BDQ-T1-E3 OMO.#: OMO-SI6433BDQ-T1-E3-VISHAY |
IGBT Transistors MOSFET 12V 4.8A 1.5W 40mohm @ 4.5V |
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Mfr.#: SI6433BDQ-T1-GE3 OMO.#: OMO-SI6433BDQ-T1-GE3-VISHAY |
IGBT Transistors MOSFET 12V 4.8A 1.5W 40mohm @ 4.5V |
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Mfr.#: SI6433BDQ OMO.#: OMO-SI6433BDQ-1190 |
全新原装 |
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Mfr.#: SI6433BDQ-T1 OMO.#: OMO-SI6433BDQ-T1-1190 |
Small Signal Field-Effect Transistor, 4A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET |
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Mfr.#: SI6433BDQ-TI OMO.#: OMO-SI6433BDQ-TI-1190 |
全新原装 |
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Mfr.#: SI6433BDQT1E3 OMO.#: OMO-SI6433BDQT1E3-1190 |
Small Signal Field-Effect Transistor, 4A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET |