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RJH60F4DPQ-A0#T0

RJH60F4DPQ-A0#T0
Mfr. #:
RJH60F4DPQ-A0#T0
制造商:
Renesas Electronics
描述:
IGBT Transistors IGBT
生命周期:
制造商新产品。
数据表:
RJH60F4DPQ-A0#T0 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
RJH60F4DPQ-A0#T0 DatasheetRJH60F4DPQ-A0#T0 Datasheet (P4-P6)RJH60F4DPQ-A0#T0 Datasheet (P7-P8)
ECAD Model:
产品属性
属性值
制造商：
瑞萨电子
产品分类：
IGBT晶体管
RoHS：
Y
技术：
硅
打包：
管子
品牌：
瑞萨电子
湿气敏感：
是的
产品类别：
IGBT晶体管
出厂包装数量：
1
子类别：
IGBT
单位重量：
0.216582 oz
Tags
RJH60F4DPQ-A, RJH60F4DPQ, RJH60F4D, RJH60F4, RJH60F, RJH60, RJH6, RJH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 600V 60A 235800mW 3-Pin(3+Tab) TO-247A Tube
***SIT Distribution GmbH
Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-247
***ark
Igbt, High Speed, 600V, 60A, To-247A
***nell
IGBT, HIGH SPEED, 600V, 60A, TO-247A; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 1.7V; Power Dissipation Pd: 235.8W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. o
***ure Electronics
IRG4PC40SPbF Series 600 V 31 A N-Channel Standard Speed IGBT - TO-220AC
***p One Stop Global
Trans IGBT Chip N-CH 600V 60A 160000mW 3-Pin(3+Tab) TO-247AC Tube
***(Formerly Allied Electronics)
600V DC-1 KHZ (STANDARD) DISCRETE IGBT IN A TO-247AC PACKAGE | Infineon IRG4PC40SPBF
***trelec
IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 1.5 V Current release time: 940 ns Power dissipation: 160 W
***ark
IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:60A; Collector Emitter Saturation Voltage, Vce(sat):1.5V; Power Dissipation, Pd:160W; Package/Case:TO-247AC ;RoHS Compliant: Yes
***ment14 APAC
IGBT, 600V, 60A, TO-247AC; Transistor Type:IGBT; DC Collector Current:60A; Collector Emitter Voltage Vces:1.6V; Power Dissipation Pd:160W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:60A; Current Temperature:25°C; Device Marking:IRG4PC40SPbF; Fall Time Max:380ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247AC; Power Dissipation Max:160W; Power Dissipation Pd:160W; Power Dissipation Pd:160W; Pulsed Current Icm:120A; Rise Time:18ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
***icroelectronics
Trench gate field-stop IGBT, HB series 600 V, 30 A high speed
***ical
Trans IGBT Chip N-CH 600V 60A 260000mW 3-Pin(3+Tab) TO-247 Tube
***nell
IGBT, SINGLE, 600V, 60A, TO-247; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 600V; Power Dissipation Pd: 260W; Collector Emitter Voltage V(br)ceo: 1.55V; Transistor Case Style: TO-247; No. of Pins
***ical
Trans IGBT Chip N-CH 600V 47A 192000mW 3-Pin(3+Tab) TO-247AC Tube
*** Electronic Components
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***S
French Electronic Distributor since 1988
***i-Key Marketplace
IRGP6630D - IGBT WITH ULTRAFAST
***nell
IGBT, 600V, 47A, TO-247AC-3; DC Collector Current: 47A; Collector Emitter Saturation Voltage Vce(on): 1.65V; Power Dissipation Pd: 192W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247AC; No. of Pins: 3
***ical
Trans IGBT Chip N-CH 600V 47A 206000mW 3-Pin(3+Tab) TO-247AD Tube
***nell
IGBT, SINGLE, 600V, 47A, TO-247AD-3; DC Collector Current: 47A; Collector Emitter Saturation Voltage Vce(on): 1.65V; Power Dissipation Pd: 206W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247AD; No. o
***ark
Igbt, 600V, 47A, 206W, To-247Ad; Continuous Collector Current:47A; Collector Emitter Saturation Voltage:1.95V; Power Dissipation:206W; Collector Emitter Voltage Max:600V; No. Of Pins:3Pins; Operating Temperature Max:175°C Rohs Compliant: Yes |Infineon IRGP4630D-EPBF..
***Yang
TO-247, SINGLE, N-CHANNEL, 600V SMPS IGBT - Bulk
*** Electronic Components
IGBT Transistors Sgl N-Ch 600V SMPS
***nell
IGBT, N, TO-247; Transistor Type:IGBT; Transistor Polarity:N; Voltage, Vces:600V; Current Ic Continuous a Max:45A; Voltage, Vce Sat Max:2.5V; Power Dissipation:167W; Case Style:TO-247; Alternate Case Style:SOT-249; Collector-to-Emitter Breakdown Voltage:600V; Current, Icm Pulsed:108A; No. of Pins:3; Pin Format:GCE; Power, Pd:167W; Power, Ptot:167W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Time, Fall:53ns; Time, Rise:10ns; Transistors, No. of:1
***ical
Trans IGBT Chip N-CH 600V 60A 260000mW 3-Pin(3+Tab) TO-247 Tube
***icroelectronics
Trench gate field-stop IGBT, HB series 600 V, 30 A high speed
***SIT Distribution GmbH
Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel
可用性
库存:
Available
订购:
3500
输入数量:
RJH60F4DPQ-A0#T0的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
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