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SI3447BDV-T1-E3

SI3447BDV-T1-E3
Mfr. #:
SI3447BDV-T1-E3
制造商:
Vishay
描述:
IGBT Transistors MOSFET 12V 5.2A 2W
生命周期:
制造商新产品。
数据表:
SI3447BDV-T1-E3 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI3447BDV-T1-E3 DatasheetSI3447BDV-T1-E3 Datasheet (P4-P6)
ECAD Model:
产品属性
属性值
制造商
威世
产品分类
FET - 单
Tags
SI3447BDV-T, SI3447B, SI3447, SI344, SI34, SI3
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET P-CH 12V 4.5A 6-Pin TSOP T/R
***ark
MOSFET, P, TSOP-6; Transistor Type:MOSFET; Transistor Polarity:P; Voltage, Vds Typ:-12V; Current, Id Cont:4.5A; Resistance, Rds On:0.04ohm; Voltage, Vgs Rds on Measurement:4.5V; Voltage, Vgs th Typ:-1V; Case Style:TSOP; Termination ;RoHS Compliant: Yes
***ment14 APAC
MOSFET, P, TSOP-6; Transistor Polarity:P Channel; Continuous Drain Current Id:4.5A; Drain Source Voltage Vds:12V; On Resistance Rds(on):40mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-1V; Power Dissipation Pd:1.1W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TSOP; No. of Pins:6; SVHC:No SVHC (20-Jun-2011); Charge Qrr @ Tj = 25°C Typ:9.3nC; Current Id Max:-4.5A; Current Temperature:25°C; External Depth:2.85mm; External Length / Height:1.45mm; External Width:3mm; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; No. of Transistors:1; On State Resistance @ Vgs = 2.5V:53mohm; On State Resistance @ Vgs = 4.5V:40mohm; Package / Case:TSOP; Power Dissipation Pd:1.1W; Power Dissipation Pd:1.1W; Pulse Current Idm:20A; Reverse Recovery Time trr Typ:40ns; SMD Marking:B7xxx; Termination Type:SMD; Voltage Vds:12V; Voltage Vds Typ:-12V; Voltage Vgs Max:-8V; Voltage Vgs Rds on Measurement:4.5V
型号 制造商 描述 库存 价格
SI3447BDV-T1-E3
DISTI # SI3447BDV-T1-E3TR-ND		Vishay SiliconixMOSFET P-CH 12V 4.5A 6-TSOP
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Limited Supply - Call
    SI3447BDV-T1-E3
    DISTI # SI3447BDV-T1-E3CT-ND    		Vishay SiliconixMOSFET P-CH 12V 4.5A 6-TSOP
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      SI3447BDV-T1-E3
      DISTI # SI3447BDV-T1-E3DKR-ND      		Vishay SiliconixMOSFET P-CH 12V 4.5A 6-TSOP
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		Limited Supply - Call
        SI3447BDV-T1-E3
        DISTI # 70026200        		Vishay SiliconixMOSFET,12V P-CH 95 MOHM @ 1.8V VGS Rated Trench
        RoHS: Compliant        		0
        • 3000:$0.2400
        • 6000:$0.2200
        • 9000:$0.2000
        SI3447BDV-T1-E3
        DISTI # 781-SI3447BDV-E3        		Vishay IntertechnologiesMOSFET 12V 5.2A 2W
        RoHS: Compliant        		0
          SI3447BDV-T1-E3Vishay Intertechnologies 1434
            SI3447BDV-T1-E3Vishay Siliconix 1915
            • 9:$0.5625
            • 37:$0.3656
            • 138:$0.2109
            • 476:$0.1800
            • 1029:$0.1575
            SI3447BDV-T1-E3Vishay SemiconductorsSMALL SIGNAL FIELD-EFFECT TRANSISTOR, 4.5A I(D), 12V, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET1532
            • 890:$0.1950
            • 161:$0.2250
            • 1:$0.7500
            SI3447BDV-T1-E3
            DISTI # 1213158            		Vishay IntertechnologiesMOSFET, P, TSOP-6
            RoHS: Compliant            		0
            • 1:$0.8480
            • 10:$0.6660
            • 100:$0.5180
            • 500:$0.4340
            • 1000:$0.3730
            图片 型号 描述
            SI3447BDV-T1-GE3

            Mfr.#: SI3447BDV-T1-GE3

            OMO.#: OMO-SI3447BDV-T1-GE3

            		 MOSFET RECOMMENDED ALT 78-SI3493DDV-T1-GE3
            SI3447BDV-T1-E3

            Mfr.#: SI3447BDV-T1-E3

            OMO.#: OMO-SI3447BDV-T1-E3-VISHAY

            		 IGBT Transistors MOSFET 12V 5.2A 2W
            SI3447BDV

            Mfr.#: SI3447BDV

            OMO.#: OMO-SI3447BDV-1190

            		 全新原装
            SI3447BDV-T1

            Mfr.#: SI3447BDV-T1

            OMO.#: OMO-SI3447BDV-T1-1190

            		 全新原装
            SI3447BDV-T1-GE3

            Mfr.#: SI3447BDV-T1-GE3

            OMO.#: OMO-SI3447BDV-T1-GE3-VISHAY

            		 MOSFET P-CH 12V 4.5A 6-TSOP
            可用性
            库存:
            Available
            订购:
            2000
            输入数量:
            SI3447BDV-T1-E3的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
            参考价格（美元）
            数量
            单价
            小计金额
            1
            US$0.24
            US$0.24
            10
            US$0.22
            US$2.24
            100
            US$0.21
            US$21.26
            500
            US$0.20
            US$100.40
            1000
            US$0.19
            US$189.00
            由于2021年半导体供不应求，低于2021年之前的正常价格，请发询价确认。
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