CXDM6053N TR

Mfr. #:: CXDM6053N TR
制造商:: Central Semiconductor
描述:: MOSFET SMD Small Sig Mosfet NCh Enh Mode Hi Crnt
生命周期:: 制造商新产品。
数据表:: CXDM6053N TR 数据表
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更多信息:: CXDM6053N TR 更多信息

产品属性
属性值

制造商: 中央半导体

产品分类: 晶体管 - FET、MOSFET - 单

系列: CXDM60

打包: 卷轴

单位重量: 0.004603 oz

安装方式: 贴片/贴片

包装盒: SOT-89-3

技术: 硅

通道数: 1 Channel

配置: 单身的

晶体管型: 1 N-Channel

钯功耗: 1.2 W

最高工作温度: + 150 C

最低工作温度: - 55 C

VGS-栅极-源极-电压: 20 V

Id 连续漏极电流: 5.3 A

Vds-漏-源-击穿电压: 60 V

Rds-On-Drain-Source-Resistance: 52 mOhms

晶体管极性: N通道

Qg-门电荷: 8.8 nC

通道模式: 增强

Tags: CXDM6, CXDM, CXD

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

CXDM6053N TR 更多信息

CxxDM Surface Mount Enhancement-Mode MOSFETs: Central Semiconductor CxxDM Surface Mount Enhancement-Mode MOSFETs are designed for high speed pulsed amplifier and driver applications. Central Semiconductor CxxDM Surface Mount Enhancement-Mode MOSFETs offer a very low rDS(ON) and low threshold voltage. The CMLDM5757 consists of dual P-channel enhancement-mode silicon MOSFETs. The CMLDM3757 consists of complementary N-channel and P-channel enhancement-mode silicon MOSFETs. The CMPDM7002AHC is a high current version of the 2N7002A enhancement-mode N-channel MOSFET. And the CEDM7001 is an N-channel enhancement-mode silicon MOSFET, manufactured with the N-channel DMOS process. CEDM8004VL is a P-Channel Enhancement-mode MOSFET, manufactured by the P-Channel DMOS process, designed for high speed pulsed amplifier and driver applications. CEDM7004VL is an N-Channel Enhancement-mode MOSFET, manufactured by the N-Channel DMOS process, designed for high speed pulsed amplifier and driver applications. Learn more

Market price

型号	制造商	描述	库存	价格
CXDM6053N TR DISTI # CXDM6053NCT-ND	Central Semiconductor Corp	MOSFET N-CH 60V 5.3A SOT-89 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	144In Stock	500:$0.6028 100:$0.7772 10:$0.9830 1:$1.1100
CXDM6053N TR DISTI # CXDM6053NDKR-ND	Central Semiconductor Corp	MOSFET N-CH 60V 5.3A SOT-89 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	144In Stock	500:$0.6028 100:$0.7772 10:$0.9830 1:$1.1100
CXDM6053N TR DISTI # CXDM6053NTR-ND	Central Semiconductor Corp	MOSFET N-CH 60V 5.3A SOT-89 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	Temporarily Out of Stock	1000:$0.4620
CXDM6053N TR DISTI # CXDM6053N TR	Central Semiconductor Corp	N-Channel Enhancement Mode MOSFET High Current 60V 5.3V 3-Pin SOT-89 T/R - Tape and Reel (Alt: CXDM6053N TR) RoHS: Not Compliant Min Qty: 2000 Container: Reel	Americas - 0	2000:$0.3679 4000:$0.3519 6000:$0.3429 10000:$0.3349 20000:$0.3199
CXDM6053N TR DISTI # 610-CXDM6053N-TR	Central Semiconductor Corp	MOSFET 60Vds N-Ch Enh FET 20Vgs 5.3A 1.2W RoHS: Compliant	1784	1:$0.8900 10:$0.7240 100:$0.6030 500:$0.4650 1000:$0.4200 2000:$0.3730 10000:$0.3590

图片	型号	描述
	Mfr.#: CXDM6053N TR OMO.#: OMO-CXDM6053N-TR	MOSFET 60Vds N-Ch Enh FET 20Vgs 5.3A 1.2W
	Mfr.#: CXDM6053N OMO.#: OMO-CXDM6053N-1190	全新原装
	Mfr.#: CXDM6053N TR PBFREE OMO.#: OMO-CXDM6053N-TR-PBFREE-1190	全新原装
	Mfr.#: CXDM6053N-TR OMO.#: OMO-CXDM6053N-TR-1190	全新原装
	Mfr.#: CXDM6053N TR OMO.#: OMO-CXDM6053N-TR-CENTRAL-SEMICONDUCTOR	MOSFET SMD Small Sig Mosfet NCh Enh Mode Hi Crnt

CXDM6053N TR

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes