IGW03N120H2

Mfr. #:: IGW03N120H2
制造商:: Infineon Technologies
描述:: IGBT Transistors HIGH SPEED 2 TECH 1200V 3A
生命周期:: 制造商新产品。
数据表:: IGW03N120H2 数据表
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产品属性
属性值

制造商：: 英飞凌

产品分类：: IGBT晶体管

RoHS：: Y

技术：: 硅

包装/案例：: TO-247-3

安装方式：: 通孔

配置：: 单身的

集电极-发射极电压 VCEO 最大值：: 1200 V

最大栅极发射极电压：: 20 V

最低工作温度：: - 40 C

最高工作温度：: + 150 C

系列：: IGW03N120

打包：: 管子

连续集电极电流 Ic 最大值：: 9.6 A

高度：: 20.95 mm

长度：: 15.9 mm

宽度：: 5.3 mm

品牌：: 英飞凌科技

产品类别：: IGBT晶体管

出厂包装数量：: 240

子类别：: IGBT

第 # 部分别名：: IGW03N120H2FKSA1 IGW3N12H2XK SP000014182

单位重量：: 1.340411 oz

Tags: IGW03, IGW0, IGW

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IGW03N120H2 描述

***ical: Trans IGBT Chip N-CH 1200V 9.6A 62500mW 3-Pin(3+Tab) TO-247 Tube

***ment14 APAC: IGBT, N, 1200V, 3.9A, TO-247; Transistor Type:IGBT; DC Collector Current:9.6A; Collector Emitter Voltage Vces:2.8V; Power Dissipation Pd:62.5W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-40°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:3.9A; No. of Transistors:1; Package / Case:TO-247; Power Dissipation Max:62.5W; Power Dissipation Pd:62.5W; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:1.2kV

***ineon: Infineon provides a huge IGBT portfolio addressing Soft Switching/Resonant and Hard Switching Topologies. | Summary of Features: Loss reduction in resonant circuits; Temperature stable behavior; Parallel switching capability; Tight parameter distribution; E off optimized for IC =1A | Target Applications: SMPS

Market price

型号	制造商	描述	库存	价格
IGW03N120H2FKSA1 DISTI # IGW03N120H2FKSA1-ND	Infineon Technologies AG	IGBT 1200V 9.6A 62.5W TO247-3 RoHS: Compliant Min Qty: 240 Container: Tube	Limited Supply - Call	240:$2.3438
IGW03N120H2XK DISTI # IGW03N120H2FKSA1	Infineon Technologies AG	Trans IGBT Chip N-CH 1.2KV 9.6A 3-Pin(3+Tab) TO-247 - Rail/Tube (Alt: IGW03N120H2FKSA1) RoHS: Compliant Min Qty: 480 Container: Tube	Americas - 0	480:$1.5900 960:$1.4900 1440:$1.4900 2400:$1.3900 4800:$1.3900
IGW03N120H2	Infineon Technologies AG	Insulated Gate Bipolar Transistor, 9.6A I(C), 1200V V(BR)CES, N-Channel, TO-247AD RoHS: Compliant	60	1000:$1.4600 500:$1.5300 100:$1.6000 25:$1.6600 1:$1.7900
IGW03N120H2 DISTI # 726-IGW03N120H2	Infineon Technologies AG	IGBT Transistors HIGH SPEED 2 TECH 1200V 3A RoHS: Compliant	0
IGW03N120H2FKSA1 DISTI # N/A	Infineon Technologies AG	IGBT Transistors IGBT PRODUCTS	0
IGW03N120H2 DISTI # 1471730	Infineon Technologies AG	IGBT, N, 1200V, 3.9A, TO-247 RoHS: Compliant	0	1:$4.8000 10:$4.0900 100:$3.5500 250:$3.3500 500:$3.0300 1000:$2.5600 2500:$2.4300 5000:$2.4300

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	Mfr.#: IGW03N120H2FKSA1 OMO.#: OMO-IGW03N120H2FKSA1	IGBT Transistors IGBT PRODUCTS
	Mfr.#: IGW03N120H2 G03H1202 OMO.#: OMO-IGW03N120H2-G03H1202-1190	全新原装
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	Mfr.#: IGW03N120H2XK OMO.#: OMO-IGW03N120H2XK-1190	Trans IGBT Chip N-CH 1.2KV 9.6A 3-Pin(3+Tab) TO-247 - Rail/Tube (Alt: IGW03N120H2FKSA1)
	Mfr.#: IGW03N120H2 OMO.#: OMO-IGW03N120H2-126	IGBT Transistors HIGH SPEED 2 TECH 1200V 3A