SI7788DP-T1-GE3

Mfr. #:: SI7788DP-T1-GE3
制造商:: Vishay
描述:: RF Bipolar Transistors MOSFET 30V 50A 69W 3.1mohm @ 10V
生命周期:: 制造商新产品。
数据表:: SI7788DP-T1-GE3 数据表
交货:: DHL FedEx Ups TNT EMS
支付:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

产品属性
属性值

制造商: 威世

产品分类: FET - 单

打包: 卷轴

部分别名: SI7788DP-GE3

单位重量: 0.017870 oz

安装方式: 贴片/贴片

包装盒: SO-8

技术: 硅

通道数: 1 Channel

配置: 单四漏三源

晶体管型: 1 N-Channel

钯功耗: 5.2 W

最高工作温度: + 150 C

最低工作温度: - 55 C

秋季时间: 18 ns

上升时间: 21 ns

VGS-栅极-源极-电压: 20 V

Id 连续漏极电流: 29.5 A

Vds-漏-源-击穿电压: 30 V

Rds-On-Drain-Source-Resistance: 3.1 mOhms

晶体管极性: N通道

典型关断延迟时间: 45 ns

典型开启延迟时间: 44 ns

通道模式: 增强

Tags: SI7788, SI778, SI77, SI7

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI7788DP-T1-GE3 描述

***ment14 APAC: N CHANNEL MOSFET, 30V, 50A, SOIC, FULL R

***et: Trans MOSFET N-CH 30V 29.5A 8-Pin PowerPAK SO T/R

***ark: Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:50000mA; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):0.0041ohm; Rds(on) Test Voltage, Vgs:20V; Threshold Voltage, Vgs Typ:2.5V; Power Dissipation, Pd:5.2W ;RoHS Compliant: Yes

Market price

型号	制造商	描述	库存	价格
SI7788DP-T1-GE3 DISTI # SI7788DP-T1-GE3CT-ND	Vishay Siliconix	MOSFET N-CH 30V 50A PPAK SO-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
SI7788DP-T1-GE3 DISTI # SI7788DP-T1-GE3DKR-ND	Vishay Siliconix	MOSFET N-CH 30V 50A PPAK SO-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
SI7788DP-T1-GE3 DISTI # SI7788DP-T1-GE3TR-ND	Vishay Siliconix	MOSFET N-CH 30V 50A PPAK SO-8 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Temporarily Out of Stock	3000:$1.3811
SI7788DP-T1-GE3 DISTI # SI7788DP-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 29.5A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SI7788DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$1.2900 6000:$1.2900 12000:$1.1900 18000:$1.1900 30000:$1.0900
SI7788DP-T1-GE3 DISTI # 781-SI7788DP-T1-GE3	Vishay Intertechnologies	MOSFET 30V 50A 69W 3.1mohm @ 10V RoHS: Compliant	4298	1:$2.8900 10:$2.4000 100:$1.8600 500:$1.6300 1000:$1.5600 3000:$1.5500
SI7788DP-T1-GE3	Vishay Intertechnologies	MOSFET 30V 50A 69W 3.1mohm @ 10V	Americas -
SI7788DP-T1-GE3 DISTI # 2478982	Vishay Intertechnologies	N CHANNEL MOSFET, 30V, 50A, SOIC, FULL R RoHS: Compliant	0	3000:£1.2300 6000:£1.2000
SI7788DP-T1-GE3 DISTI # 2478982	Vishay Intertechnologies	N CHANNEL MOSFET, 30V, 50A, SOIC, FULL REEL RoHS: Compliant	0	3000:$5.1000 6000:$3.9100 12000:$3.1400

相关产品

图片	型号	描述
	Mfr.#: SI7788DP-T1-GE3 OMO.#: OMO-SI7788DP-T1-GE3	MOSFET 30V 50A 69W 3.1mohm @ 10V
	Mfr.#: SI7788DP-T1-GE3 OMO.#: OMO-SI7788DP-T1-GE3-VISHAY	RF Bipolar Transistors MOSFET 30V 50A 69W 3.1mohm @ 10V
	Mfr.#: SI7788DP OMO.#: OMO-SI7788DP-1190	全新原装
	Mfr.#: SI7788DP-T1-E3 OMO.#: OMO-SI7788DP-T1-E3-1190	全新原装

可用性

库存:: Available
订购:: 3000
输入数量:

SI7788DP-T1-GE3的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]

参考价格（美元）

数量
单价
小计金额

1: ~~US$1.64~~; ~~US$1.64~~

10: ~~US$1.55~~; ~~US$15.53~~

100: ~~US$1.47~~; ~~US$147.15~~

500: ~~US$1.39~~; ~~US$694.90~~

1000: ~~US$1.31~~; ~~US$1 308.00~~

由于2021年半导体供不应求，低于2021年之前的正常价格，请发询价确认。

从...开始

SI7788 3
SI778 7
SI77 66
SI7 1547

SI7788DP-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes