BSZ070N08LS5ATMA1

BSZ070N08LS5ATMA1
Mfr. #:
BSZ070N08LS5ATMA1
制造商:
Infineon Technologies
描述:
MV POWER MOS
生命周期:
制造商新产品。
数据表:
BSZ070N08LS5ATMA1 数据表
交货:
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支付:
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ECAD Model:
产品属性
属性值
Tags
BSZ070, BSZ07, BSZ0, BSZ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 80V 13A 8-Pin TSDSON EP T/R
***ark
MOSFET, N-CH, 80V, 40A, 150DEG C, 69W; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.0059ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V; Power RoHS Compliant: Yes
***ineon
Infineon's new logic level OptiMOS 5 power MOSFETs are highly suitable for wireless charging, adapter and telecom applications. The new devices' low gate charge (Q g) reduces switching losses without compromising conduction losses. The improved figues of merit allow operations at high switching frequencies. Furthermore, the logic level drive provides a low gate threshold voltage (V GS(th)) allowing the MOSFETs to be driven at 5V and directly from microcontrollers. | Summary of Features: Low R DS(on) in small package; Low gate charge; Lower output charge; Logic level compatibility | Benefits: Higher power density designs; Higher switching frequency; Reduced parts count wherever 5V supplies are available; Driven directly from microcontrollers (slow switching); System cost reduction | Target Applications: Wireless charging; Adapter; Telecom
型号 制造商 描述 库存 价格
BSZ070N08LS5ATMA1
DISTI # V36:1790_16141100
Infineon Technologies AG80V N-Channel MOSFET285000
  • 10000:$0.5527
  • 5000:$0.5800
BSZ070N08LS5ATMA1
DISTI # BSZ070N08LS5ATMA1-ND
Infineon Technologies AGMV POWER MOS
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 5000:$0.6094
BSZ070N08LS5ATMA1
DISTI # 33725351
Infineon Technologies AG80V N-Channel MOSFET260000
  • 5000:$0.5800
BSZ070N08LS5ATMA1
DISTI # 31684018
Infineon Technologies AG80V N-Channel MOSFET5000
  • 5000:$0.5349
BSZ070N08LS5ATMA1
DISTI # SP001352992
Infineon Technologies AGTrans MOSFET N 80V 13A 8-Pin TSDSON T/R (Alt: SP001352992)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel
Europe - 15000
  • 50000:€0.5079
  • 30000:€0.5469
  • 20000:€0.5929
  • 10000:€0.6469
  • 5000:€0.7909
BSZ070N08LS5ATMA1
DISTI # BSZ070N08LS5ATMA1
Infineon Technologies AGTrans MOSFET N 80V 13A 8-Pin TSDSON T/R - Tape and Reel (Alt: BSZ070N08LS5ATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel
Americas - 0
  • 50000:$0.5539
  • 30000:$0.5639
  • 20000:$0.5839
  • 10000:$0.6059
  • 5000:$0.6279
BSZ070N08LS5ATMA1
DISTI # 726-BSZ070N08LS5ATMA
Infineon Technologies AGMOSFET
RoHS: Compliant
5728
  • 1:$1.4300
  • 10:$1.2200
  • 100:$0.9390
  • 500:$0.8300
  • 1000:$0.6550
  • 5000:$0.5810
  • 10000:$0.5590
BSZ070N08LS5ATMA1
DISTI # XSKDRABV0046908
Infineon Technologies AG 
RoHS: Compliant
10000 in Stock0 on Order
  • 10000:$0.7493
  • 5000:$0.8029
图片 型号 描述
BSZ070N08LS5ATMA1

Mfr.#: BSZ070N08LS5ATMA1

OMO.#: OMO-BSZ070N08LS5ATMA1

MOSFET
BSZ070N08LS5

Mfr.#: BSZ070N08LS5

OMO.#: OMO-BSZ070N08LS5-1190

SP001352992 OPTIMOS 5 POWER MOSFETS (Alt: BSZ070N08LS5)
BSZ070N08LS5ATMA1

Mfr.#: BSZ070N08LS5ATMA1

OMO.#: OMO-BSZ070N08LS5ATMA1-INFINEON-TECHNOLOGIES

MV POWER MOS
可用性
库存:
Available
订购:
5500
输入数量:
BSZ070N08LS5ATMA1的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格(美元)
数量
单价
小计金额
1
US$0.00
US$0.00
10
US$0.00
US$0.00
100
US$0.00
US$0.00
500
US$0.00
US$0.00
1000
US$0.00
US$0.00
由于2021年半导体供不应求,低于2021年之前的正常价格,请发询价确认。
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