SI3443CDV-T1-GE3

Mfr. #:: SI3443CDV-T1-GE3
制造商:: Vishay
描述:: MOSFET P-CH 20V 5.97A 6TSOP
生命周期:: 制造商新产品。
数据表:: SI3443CDV-T1-GE3 数据表
交货:: DHL FedEx Ups TNT EMS
支付:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

产品属性
属性值

制造商: 威世硅

产品分类: FET - 单

系列: 沟槽FETR

打包: Digi-ReelR 替代包装

部分别名: SI3443CDV-GE3

单位重量: 0.000705 oz

安装方式: 贴片/贴片

包装盒: SOT-23-6 Thin, TSOT-23-6

技术: 硅

工作温度: -55°C ~ 150°C (TJ)

安装型: 表面贴装

通道数: 1 Channel

供应商-设备-包: 6-TSOP

配置: 单身的

FET型: MOSFET P 沟道，金属氧化物

最大功率: 3.2W

晶体管型: 1 P-Channel

漏源电压 Vdss: 20V

输入电容-Ciss-Vds: 610pF @ 10V

FET-Feature: 标准

Current-Continuous-Drain-Id-25°C: 5.97A (Tc)

Rds-On-Max-Id-Vgs: 60 mOhm @ 4.7A, 4.5V

Vgs-th-Max-Id: 1.5V @ 250μA

栅极电荷-Qg-Vgs: 12.4nC @ 5V

钯功耗: 2 W

最高工作温度: + 150 C

最低工作温度: - 55 C

秋季时间: 11 ns

上升时间: 59 ns

VGS-栅极-源极-电压: 12 V

Id 连续漏极电流: 4.7 A

Vds-漏-源-击穿电压: - 20 V

VGS-th-Gate-Source-Threshold-Voltage: - 1.5 V

Rds-On-Drain-Source-Resistance: 60 mOhms

晶体管极性: P-通道

典型关断延迟时间: 30 ns

典型开启延迟时间: 27 ns

Qg-门电荷: 8.26 nC

通道模式: 增强

Tags: SI3443CDV-T1, SI3443CDV-T, SI3443CD, SI3443C, SI3443, SI344, SI34, SI3

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI3443CDV-T1-GE3 描述

***ure Electronics: Single P-Channel 20 V 0.06 Ohm Surface Mount Power Mosfet - TSOP-6

***ark: Transistor; Transistor Polarity:P Channel; Continuous Drain Current, Id:3.9A; Drain Source Voltage, Vds:20V; On Resistance, Rds(on):0.084ohm; Rds(on) Test Voltage, Vgs:2.7V; Threshold Voltage, Vgs Typ:0.6V ;RoHS Compliant: Yes

***ment14 APAC: MOSFET, P-CH, 20V, 5.97A, TSOP6; Transistor Polarity:P Channel; Continuous Drain Current Id:-5.97A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):50mohm; Rds(on) Test Voltage Vgs:-4.5V; Power Dissipation Pd:3.2W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TSOP; No. of Pins:6; SVHC:No SVHC (20-Jun-2011); Current Id Max:-5.97A; Power Dissipation Pd:3.2W; Voltage Vgs Max:12V

Market price

型号	制造商	描述	库存	价格
SI3443CDV-T1-GE3 DISTI # V72:2272_09216649	Vishay Intertechnologies	Trans MOSFET P-CH 20V 4.7A 6-Pin TSOP T/R RoHS: Compliant	1353	1000:$0.1515 500:$0.2084 250:$0.2387 100:$0.2652 25:$0.3516 10:$0.3908 1:$0.4598
SI3443CDV-T1-GE3 DISTI # V36:1790_09216649	Vishay Intertechnologies	Trans MOSFET P-CH 20V 4.7A 6-Pin TSOP T/R RoHS: Compliant	0	3000:$0.1841
SI3443CDV-T1-GE3 DISTI # SI3443CDV-T1-GE3CT-ND	Vishay Siliconix	MOSFET P-CH 20V 5.97A 6TSOP RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	9140In Stock	1000:$0.1695 500:$0.2194 100:$0.2792 10:$0.3740 1:$0.4400
SI3443CDV-T1-GE3 DISTI # SI3443CDV-T1-GE3DKR-ND	Vishay Siliconix	MOSFET P-CH 20V 5.97A 6TSOP RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	9140In Stock	1000:$0.1695 500:$0.2194 100:$0.2792 10:$0.3740 1:$0.4400
SI3443CDV-T1-GE3 DISTI # SI3443CDV-T1-GE3TR-ND	Vishay Siliconix	MOSFET P-CH 20V 5.97A 6TSOP RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	9000In Stock	75000:$0.1226 30000:$0.1239 15000:$0.1307 6000:$0.1404 3000:$0.1501
SI3443CDV-T1-GE3 DISTI # 30601646	Vishay Intertechnologies	Trans MOSFET P-CH 20V 4.7A 6-Pin TSOP T/R RoHS: Compliant	7264	97:$0.2600
SI3443CDV-T1-GE3 DISTI # 31954610	Vishay Intertechnologies	Trans MOSFET P-CH 20V 4.7A 6-Pin TSOP T/R RoHS: Compliant	1353	80:$0.4598
SI3443CDV-T1-GE3 DISTI # SI3443CDV-T1-GE3	Vishay Intertechnologies	Trans MOSFET P-CH 20V 4.7A 6-Pin TSOP T/R - Tape and Reel (Alt: SI3443CDV-T1-GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 3000	30000:$0.0713 18000:$0.0732 12000:$0.0753 6000:$0.0785 3000:$0.0809
SI3443CDV-T1-GE3 DISTI # SI3443CDV-T1-GE3	Vishay Intertechnologies	Trans MOSFET P-CH 20V 4.7A 6-Pin TSOP T/R (Alt: SI3443CDV-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Asia - 0
SI3443CDV-T1-GE3 DISTI # SI3443CDV-T1-GE3	Vishay Intertechnologies	Trans MOSFET P-CH 20V 4.7A 6-Pin TSOP T/R (Alt: SI3443CDV-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	30000:€0.0859 18000:€0.0929 12000:€0.0999 6000:€0.1169 3000:€0.1709
SI3443CDV-T1-GE3 DISTI # 15R4932	Vishay Intertechnologies	P CHANNEL MOSFET, FULL REEL,Transistor Polarity:P Channel,Continuous Drain Current Id:-4.7A,Drain Source Voltage Vds:-20V,On Resistance Rds(on):0.06ohm,Rds(on) Test Voltage Vgs:-4.5V,Threshold Voltage Vgs:-600mV RoHS Compliant: Yes	0	50000:$0.1290 30000:$0.1350 20000:$0.1450 10000:$0.1550 5000:$0.1680 1:$0.1720
SI3443CDV-T1-GE3 DISTI # 55R1913	Vishay Intertechnologies	MOSFET, P CHANNEL, 20V, 5.97A, TSOP6,Transistor Polarity:P Channel,Continuous Drain Current Id:-5.97A,Drain Source Voltage Vds:-20V,On Resistance Rds(on):0.05ohm,Rds(on) Test Voltage Vgs:-4.5V,Threshold Voltage Vgs:-600mV RoHS Compliant: Yes	3151	1000:$0.2510 500:$0.3160 250:$0.3460 100:$0.3770 50:$0.4170 25:$0.4570 10:$0.4970 1:$0.6420
SI3443CDV-T1-GE3 DISTI # 781-SI3443CDV-GE3	Vishay Intertechnologies	MOSFET -20V Vds 12V Vgs TSOP-6 RoHS: Compliant	4526	1:$0.6300 10:$0.4870 100:$0.3610 500:$0.2970 1000:$0.2290 3000:$0.2090 6000:$0.1950 9000:$0.1820
SI3443CDV-T1-GE3 DISTI # 1779261	Vishay Intertechnologies	MOSFET, P-CH, 20V, 5.97A, TSOP6	2626	500:£0.1850 250:£0.2190 100:£0.2520 10:£0.3750 1:£0.4650
SI3443CDV-T1-GE3	Vishay Intertechnologies	MOSFET -20V Vds 12V Vgs TSOP-6 RoHS: Compliant	Americas - 117000	3000:$0.0810 6000:$0.0790 12000:$0.0770 18000:$0.0740
SI3443BDV-T1-E3	Vishay Intertechnologies	MOSFET 20V 4.4A 2W RoHS: Compliant	Americas - 6000
SI3443CDV-T1-GE3 DISTI # 1779261RL	Vishay Intertechnologies	MOSFET, P-CH, 20V, 5.97A, TSOP6 RoHS: Compliant	0	1000:$0.2540 500:$0.3290 100:$0.4180 5:$0.5600
SI3443CDV-T1-GE3 DISTI # 1779261	Vishay Intertechnologies	MOSFET, P-CH, 20V, 5.97A, TSOP6 RoHS: Compliant	3141	1000:$0.2540 500:$0.3290 100:$0.4180 5:$0.5600
SI3443CDV-T1-GE3 DISTI # C1S803600844478	Vishay Intertechnologies	Trans MOSFET P-CH 20V 4.7A 6-Pin TSOP T/R RoHS: Compliant	7264	2000:$0.0998 1000:$0.1070 500:$0.1130 200:$0.1330 100:$0.1450 50:$0.1560 25:$0.2080

图片	型号	描述
	Mfr.#: SI3443CDV-T1-E3 OMO.#: OMO-SI3443CDV-T1-E3	MOSFET -20V Vds 12V Vgs TSOP-6
	Mfr.#: SI3443CDV-T1-GE3 OMO.#: OMO-SI3443CDV-T1-GE3	MOSFET -20V Vds 12V Vgs TSOP-6
	Mfr.#: SI3443CDV OMO.#: OMO-SI3443CDV-1190	全新原装
	Mfr.#: SI3443CDV-T1-E3 OMO.#: OMO-SI3443CDV-T1-E3-VISHAY	MOSFET P-CH 20V 5.97A 6TSOP
	Mfr.#: SI3443CDV-T1-GE3 OMO.#: OMO-SI3443CDV-T1-GE3-VISHAY	MOSFET P-CH 20V 5.97A 6TSOP
	Mfr.#: SI3443CDV-TI-GE3 OMO.#: OMO-SI3443CDV-TI-GE3-1190	全新原装
	Mfr.#: SI3443CDV-T1-E3-CUT TAPE OMO.#: OMO-SI3443CDV-T1-E3-CUT-TAPE-1190	全新原装
	Mfr.#: SI3443CDV-T1-GE3-CUT TAPE OMO.#: OMO-SI3443CDV-T1-GE3-CUT-TAPE-1190	全新原装

SI3443CDV-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes