SI2601DN-T1-GE3

SI2601DN-T1-GE3
Mfr. #:
SI2601DN-T1-GE3
制造商:
Vishay / Siliconix
描述:
MOSFET 20V 19mohm @ 4.5V
生命周期:
制造商新产品。
数据表:
SI2601DN-T1-GE3 数据表
交货:
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ECAD Model:
更多信息:
SI2601DN-T1-GE3 更多信息
产品属性
属性值
制造商:
威世
产品分类:
MOSFET
RoHS:
E
技术:
安装方式:
贴片/贴片
包装/案例:
PowerPAK-1212-8
商品名:
沟槽场效应晶体管
打包:
卷轴
高度:
1.04 mm
长度:
3.3 mm
系列:
SI2
宽度:
3.3 mm
品牌:
威世 / Siliconix
产品类别:
MOSFET
出厂包装数量:
3000
子类别:
MOSFET
第 # 部分别名:
SI2601DN-GE3
Tags
SI2
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
SI2 Series TrenchFET® Power MOSFETs
Vishay SI2 Series TrenchFET® Power MOSFETs are N-channel MOSFETs designed with 30V V(ds) and are 100% tested gate resistance(Rg). These MOSFETs have gate resistance tested for 1MHz frequency with 0.2Ω to 1.4Ω. These SI2 series MOSFETs operate from -55ºC to 150ºC junction and storage temperature. The SI2 series are ideal for DC/DC converter, Load switch, and power management.
型号 制造商 描述 库存 价格
SI2601DN-T1-GE3
DISTI # 781-SI2601DN-GE3
Vishay IntertechnologiesMOSFET 20V 19mohm @ 4.5V
RoHS: Compliant
0
  • 3000:$0.3920
  • 6000:$0.3730
  • 9000:$0.3590
图片 型号 描述
SI2601DN-T1-GE3

Mfr.#: SI2601DN-T1-GE3

OMO.#: OMO-SI2601DN-T1-GE3

MOSFET 20V 19mohm @ 4.5V
SI2601DN-T1-GE3

Mfr.#: SI2601DN-T1-GE3

OMO.#: OMO-SI2601DN-T1-GE3-317

RF Bipolar Transistors MOSFET 20V 19mohm @ 4.5V
可用性
库存:
Available
订购:
5000
输入数量:
SI2601DN-T1-GE3的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
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