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FQPF12N60C

FQPF12N60C
Mfr. #:
FQPF12N60C
制造商:
ON Semiconductor / Fairchild
描述:
MOSFET 600V N-Ch Q-FET advance C-Series
生命周期:
制造商新产品。
数据表:
FQPF12N60C 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
产品属性
属性值
制造商：
安森美半导体
产品分类：
MOSFET
RoHS：
E
技术：
硅
安装方式：
通孔
包装/案例：
TO-220-3
通道数：
1 Channel
晶体管极性：
N通道
Vds - 漏源击穿电压：
600 V
Id - 连续漏极电流：
12 A
Rds On - 漏源电阻：
650 mOhms
Vgs - 栅源电压：
30 V
最低工作温度：
- 55 C
最高工作温度：
+ 150 C
Pd - 功耗：
51 W
配置：
单身的
频道模式：
增强
打包：
管子
高度：
16.3 mm
长度：
10.67 mm
系列：
FQPF12N60C
晶体管类型：
1 N-Channel
类型：
MOSFET
宽度：
4.7 mm
品牌：
安森美半导体/飞兆半导体
正向跨导 - 最小值：
13 S
秋季时间：
90 ns
产品类别：
MOSFET
上升时间：
85 ns
出厂包装数量：
1000
子类别：
MOSFET
典型关断延迟时间：
155 ns
典型的开启延迟时间：
30 ns
第 # 部分别名：
FQPF12N60C_NL
单位重量：
0.080072 oz
Tags
FQPF12N60C, FQPF12N60, FQPF12N6, FQPF12N, FQPF12, FQPF1, FQPF, FQP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Semiconductor
Power MOSFET, N-Channel, QFET®, 600 V, 12 A, 650 mΩ, TO-220F
***ical
Trans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-220F Rail
***ark
N CH MOSFET, 600V, 12A, TO-220F
*** Source Electronics
MOSFET N-CH 600V 12A TO-220F
***inecomponents.com
600V N-Channel MOSFET QFET®
***ser
MOSFETs 600V N-Ch Q-FET advance C-Series
***nell
MOSFET, N, TO-220F; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:600V; Current, Id Cont:12A; Resistance, Rds On:0.65ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-220F; Termination Type:Through Hole; Operating Temperature Range:-55°C to +150°C; Current, Idm Pulse:48A; Power Dissipation:51W; Power, Pd:51W; Transistors, No. of:1; Voltage, Vds Max:600V
***rchild Semiconductor
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology.
***ment14 APAC
MOSFET, N, TO-220F; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:600V; On Resistance Rds(on):650mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:51W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220F; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:12A; No. of Transistors:1; Package / Case:TO-220F; Power Dissipation Pd:51W; Power Dissipation Pd:51W; Pulse Current Idm:48A; Termination Type:Through Hole; Voltage Vds Typ:600V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V
型号 制造商 描述 库存 价格
FQPF12N60C
DISTI # V36:1790_06359253		ON SemiconductorLECH/600V/12A/QFET C-SERIES13
  • 10000:$0.8785
  • 5000:$0.9223
  • 2000:$0.9667
  • 1000:$1.0561
FQPF12N60C
DISTI # FQPF12N60C-ND		ON SemiconductorMOSFET N-CH 600V 12A TO-220F
RoHS: Compliant
Min Qty: 1000
Container: Tube		Limited Supply - Call
    FQPF12N60CT
    DISTI # FQPF12N60CT-ND    		ON SemiconductorMOSFET N-CH 600V 12A TO-220F
    RoHS: Compliant
    Min Qty: 1000
    Container: Tube    		Limited Supply - Call
      FQPF12N60C
      DISTI # FQPF12N60C      		ON SemiconductorTrans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-220F Rail - Rail/Tube (Alt: FQPF12N60C)
      RoHS: Compliant
      Min Qty: 1000
      Container: Tube      		Americas - 0
      • 1000:$1.0589
      • 2000:$1.0529
      • 4000:$1.0389
      • 6000:$1.0259
      • 10000:$1.0009
      FQPF12N60C
      DISTI # FQPF12N60C      		ON SemiconductorTrans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-220F Rail (Alt: FQPF12N60C)
      RoHS: Compliant
      Min Qty: 1      		Europe - 0
        FQPF12N60C
        DISTI # 512-FQPF12N60C        		ON SemiconductorMOSFET 600V N-Ch Q-FET advance C-Series
        RoHS: Compliant        		62
        • 1:$2.6200
        • 10:$2.2200
        • 100:$1.7800
        • 500:$1.5600
        • 1000:$1.2900
        • 2000:$1.2000
        • 5000:$1.1600
        FQPF12N60CT
        DISTI # 512-FQPF12N60CT        		ON SemiconductorMOSFET N-CH/600V/12A QFET C-Series
        RoHS: Compliant        		0
          FQPF12N60C
          DISTI # 1095081          		ON Semiconductor 
          RoHS: Compliant          		0
          • 1:$3.3900
          • 10:$2.8800
          • 100:$2.3200
          • 500:$2.0100
          • 1000:$1.6800
          • 2000:$1.6700
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          可用性
          库存:
          784
          订购:
          2767
          输入数量:
          FQPF12N60C的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
          参考价格（美元）
          数量
          单价
          小计金额
          1
          US$2.62
          US$2.62
          10
          US$2.22
          US$22.20
          100
          US$1.78
          US$178.00
          500
          US$1.56
          US$780.00
          1000
          US$1.29
          US$1 290.00
          2000
          US$1.20
          US$2 400.00
          5000
          US$1.16
          US$5 800.00
          10000
          US$1.11
          US$11 100.00
          由于2021年半导体供不应求，低于2021年之前的正常价格，请发询价确认。
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