ZXMN2A04DN8TA

Mfr. #:: ZXMN2A04DN8TA
制造商:: Diodes Incorporated
描述:: Darlington Transistors MOSFET Dl 20V N-Chnl UMOS
生命周期:: 制造商新产品。
数据表:: ZXMN2A04DN8TA 数据表
交货:: DHL FedEx Ups TNT EMS
支付:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:: ZXMN2A04DN8TA 更多信息

产品属性
属性值

制造商: 二极管公司

产品分类: 集成电路芯片

系列: ZXMN2A

打包: 切割胶带 (CT) 替代包装

单位重量: 0.002610 oz

安装方式: 贴片/贴片

包装盒: 8-SOIC (0.154", 3.90mm Width)

技术: 硅

工作温度: -55°C ~ 150°C (TJ)

安装型: 表面贴装

通道数: 2 Channel

供应商-设备-包: 8-SO

配置: 双双漏

FET型: 2 N-Channel (Dual)

最大功率: 1.8W

晶体管型: 2 N-Channel

漏源电压 Vdss: 20V

输入电容-Ciss-Vds: 1880pF @ 10V

FET-Feature: 逻辑电平门

Current-Continuous-Drain-Id-25°C: 5.9A

Rds-On-Max-Id-Vgs: 25 mOhm @ 5.9A, 4.5V

Vgs-th-Max-Id: 700mV @ 250μA (Min)

栅极电荷-Qg-Vgs: 22.1nC @ 5V

钯功耗: 2.1 W

最高工作温度: + 150 C

最低工作温度: - 55 C

秋季时间: 30.6 ns

上升时间: 14.8 ns

VGS-栅极-源极-电压: 12 V

Id 连续漏极电流: 7.7 A

Vds-漏-源-击穿电压: 20 V

Rds-On-Drain-Source-Resistance: 35 mOhms

晶体管极性: N通道

典型关断延迟时间: 50.5 ns

典型开启延迟时间: 7.9 ns

通道模式: 增强

Tags: ZXMN2A0, ZXMN2A, ZXMN2, ZXMN, ZXM

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

ZXMN2A04DN8TA 描述

***C: Trans MOSFET N-CH 20V 7.7A 8-Pin SOIC T/R Trans MOSFET N-CH 20V 7.7A 8-Pin SOIC T/R

***ure Electronics: Dual N-Channel 20 V 0.025 Ohm Surface Mount Enhancement Mode MOSFET - SOIC-8

***ied Electronics & Automation: MOSFET Dual N-Channel 20V 7.7A SOIC8

***des Inc SCT: N-Channel Mosfet, 20V VDS, 12±V VGS

ZXMN2A04DN8TA 更多信息

Power MOSFETs: Diodes Inc. continues to expand its portfolio of power MOSFETs with new N- and P-channel devices with breakdown voltages up to 450V and a wide range of package options. The Diodes Inc. MOSFET portfolio is ideally suited to a range of applications, including DC-DC conversion, load switching, motor control, backlighting, battery protection, battery chargers, audio circuits, and automotive.

Market price

型号	制造商	描述	库存	价格
ZXMN2A04DN8TA DISTI # V79:2366_18816191	Zetex / Diodes Inc	Trans MOSFET N-CH 20V 7.7A Automotive 8-Pin SOIC T/R RoHS: Compliant	320	500:$0.9804 100:$1.1002 10:$1.3262 1:$1.5213
ZXMN2A04DN8TA DISTI # ZXMN2A04DN8CT-ND	Diodes Incorporated	MOSFET 2N-CH 20V 5.9A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	1286In Stock	100:$1.5805 10:$1.9670 1:$2.1800
ZXMN2A04DN8TA DISTI # ZXMN2A04DN8TR-ND	Diodes Incorporated	MOSFET 2N-CH 20V 5.9A 8-SOIC RoHS: Compliant Min Qty: 500 Container: Tape & Reel (TR)	1000In Stock	500:$1.1935
ZXMN2A04DN8TA DISTI # 26122970	Zetex / Diodes Inc	Trans MOSFET N-CH 20V 7.7A Automotive 8-Pin SOIC T/R RoHS: Compliant	320	100:$1.1002 10:$1.3262 8:$1.5213
ZXMN2A04DN8TA DISTI # ZXMN2A04DN8TA	Diodes Incorporated	Trans MOSFET N-CH 20V 7.7A 8-Pin SOIC T/R - Tape and Reel (Alt: ZXMN2A04DN8TA) RoHS: Not Compliant Min Qty: 500 Container: Reel	Americas - 0	500:$0.9349 1000:$0.8889 2000:$0.8479 3000:$0.8089 5000:$0.7909
ZXMN2A04DN8TA DISTI # 70438819	Diodes Incorporated	MOSFET Dual N-Channel 20V 7.7A SOIC8 RoHS: Compliant	0	25:$1.4200 50:$1.3920 125:$1.3490 250:$1.2920 625:$1.2070
ZXMN2A04DN8TA DISTI # 522-ZXMN2A04DN8TA	Diodes Incorporated	MOSFET Dl 20V N-Chnl UMOS RoHS: Compliant	561	1:$1.8300 10:$1.5500 100:$1.2400 500:$1.0900
ZXMN2A04DN8TA	Zetex / Diodes Inc		255	4:$1.6500 14:$1.0725 48:$0.6187 163:$0.5280
ZXMN2A04DN8TA	Zetex / Diodes Inc		204	56:$0.6600 12:$1.1000 1:$2.2000
ZXMN2A04DN8TA	Zetex / Diodes Inc		1065
ZXMN2A04DN8TA DISTI # C1S205700194277	Diodes Incorporated	Trans MOSFET N-CH 20V 7.7A Automotive 8-Pin SOIC T/R RoHS: Compliant	320	100:$1.1002 10:$1.3262

图片	型号	描述
	Mfr.#: ZXMN2A03E6TA OMO.#: OMO-ZXMN2A03E6TA	MOSFET N Channel
	Mfr.#: ZXMN2A04DN8TC OMO.#: OMO-ZXMN2A04DN8TC	MOSFET Dl 20V N Chnl UMOS
	Mfr.#: ZXMN2A01FTC OMO.#: OMO-ZXMN2A01FTC	MOSFET 20V N Chnl UMOS
	Mfr.#: ZXMN2A01F OMO.#: OMO-ZXMN2A01F-1190	全新原装
	Mfr.#: ZXMN2A01FTA OMO.#: OMO-ZXMN2A01FTA-DIODES	全新原装
	Mfr.#: ZXMN2A01FTA(7N2) OMO.#: OMO-ZXMN2A01FTA-7N2--1190	全新原装
	Mfr.#: ZXMN2A02N8TC OMO.#: OMO-ZXMN2A02N8TC-1190	全新原装
	Mfr.#: ZXMN2A02X8TC OMO.#: OMO-ZXMN2A02X8TC-DIODES	MOSFET N-CH 20V 6.2A 8-MSOP
	Mfr.#: ZXMN2A14FTC OMO.#: OMO-ZXMN2A14FTC-1190	全新原装
	Mfr.#: ZXMN2A03E6TA OMO.#: OMO-ZXMN2A03E6TA-DIODES	IGBT Transistors MOSFET N Channel

ZXMN2A04DN8TA

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes