SI4736DY-T1-GE3

SI4736DY-T1-GE3
Mfr. #:
SI4736DY-T1-GE3
制造商:
Vishay / Siliconix
描述:
MOSFET 30V 13A 3.1W 9.5mohm @ 10V
生命周期:
制造商新产品。
数据表:
SI4736DY-T1-GE3 数据表
交货:
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ECAD Model:
更多信息:
SI4736DY-T1-GE3 更多信息
产品属性
属性值
制造商:
威世
产品分类:
MOSFET
RoHS:
E
技术:
商品名:
沟槽场效应晶体管
打包:
卷轴
系列:
SI4
品牌:
威世 / Siliconix
产品类别:
MOSFET
出厂包装数量:
2500
子类别:
MOSFET
第 # 部分别名:
SI4736DY-GE3
单位重量:
0.006596 oz
Tags
SI4736DY-T, SI4736D, SI4736, SI473, SI47, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Si4 MOSFETs
Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
型号 制造商 描述 库存 价格
SI4736DY-T1-GE3
DISTI # 781-SI4736DY-GE3
Vishay IntertechnologiesMOSFET 30V 13A 3.1W 9.5mohm @ 10V
RoHS: Compliant
0
  • 2500:$1.4300
  • 5000:$1.3700
图片 型号 描述
SI4736DY-T1-E3

Mfr.#: SI4736DY-T1-E3

OMO.#: OMO-SI4736DY-T1-E3

MOSFET 30V 13A 1.4W
SI4736DY-T1-GE3

Mfr.#: SI4736DY-T1-GE3

OMO.#: OMO-SI4736DY-T1-GE3

MOSFET 30V 13A 3.1W 9.5mohm @ 10V
SI4736DY-T1-E3

Mfr.#: SI4736DY-T1-E3

OMO.#: OMO-SI4736DY-T1-E3-317

RF Bipolar Transistors MOSFET 30V 13A 1.4W
SI4736DY-T1-GE3

Mfr.#: SI4736DY-T1-GE3

OMO.#: OMO-SI4736DY-T1-GE3-317

RF Bipolar Transistors MOSFET 30V 13A 3.1W 9.5mohm @ 10V
SI4736DY

Mfr.#: SI4736DY

OMO.#: OMO-SI4736DY-1190

MOSFET, Transistor Polarity:-, Continuous Drain Current Id:-, Drain Source Voltage Vds:-, On Resistance Rds(on):-, Rds(on) Test Voltage Vgs:-, Threshold Voltage Vgs:-, Power Dissipation Pd:-,
SI4736DY-T1

Mfr.#: SI4736DY-T1

OMO.#: OMO-SI4736DY-T1-1190

全新原装
SI4736DY-T1-E3 GE3

Mfr.#: SI4736DY-T1-E3 GE3

OMO.#: OMO-SI4736DY-T1-E3-GE3-1190

全新原装
可用性
库存:
Available
订购:
3500
输入数量:
SI4736DY-T1-GE3的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
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