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IPA65R280C6XKSA1

IPA65R280C6XKSA1
Mfr. #:
IPA65R280C6XKSA1
制造商:
Infineon Technologies
描述:
MOSFET N-Ch 700V 13.8A TO220FP-3 CoolMOS C6
生命周期:
制造商新产品。
数据表:
IPA65R280C6XKSA1 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
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ECAD Model:
产品属性
属性值
制造商：
英飞凌
产品分类：
MOSFET
RoHS：
Y
技术：
硅
安装方式：
通孔
包装/案例：
TO-220FP-3
通道数：
1 Channel
晶体管极性：
N通道
Vds - 漏源击穿电压：
650 V
Id - 连续漏极电流：
13.8 A
Rds On - 漏源电阻：
250 mOhms
Vgs th - 栅源阈值电压：
2.5 V
Vgs - 栅源电压：
20 V
Qg - 门电荷：
45 nC
最低工作温度：
- 55 C
最高工作温度：
+ 150 C
Pd - 功耗：
32 W
配置：
单身的
频道模式：
增强
商品名：
酷摩
打包：
管子
高度：
16.15 mm
长度：
10.65 mm
系列：
CoolMOS C6
晶体管类型：
1 N-Channel
宽度：
4.85 mm
品牌：
英飞凌科技
秋季时间：
12 ns
产品类别：
MOSFET
上升时间：
11 ns
出厂包装数量：
500
子类别：
MOSFET
典型关断延迟时间：
105 ns
典型的开启延迟时间：
13 ns
第 # 部分别名：
IPA65R280C6XKSA1 SP000720898
单位重量：
0.211644 oz
Tags
IPA65R280C, IPA65R28, IPA65R2, IPA65R, IPA65, IPA6, IPA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    А***v
    А***v
    RU

    Excellent seller, excellent product.

    2019-07-03
    M***n
    M***n
    HK

    As described

    2019-05-23
    P***v
    P***v
    RU

    Great! Seller recommend!

    2019-05-20
***ical
Trans MOSFET N-CH 650V 13.8A 3-Pin(3+Tab) TO-220 Full-Pack
***et Europe
Trans MOSFET N-CH 700V 13.8A 3-Pin TO-220FP Tube
***ineon SCT
CoolMOS™ C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation, PG-TO220-3, RoHS
***ineon
CoolMOS C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The C6 devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. | Summary of Features: Easy control of switching behavior; Extremely low losses due to very low Figure of Merit (R DS(on)* Q g and E oss); Very high commutation ruggedness; Easy to use; Better light load efficiency compared to C3; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness; Better price performance in comparison to previous CoolMOS generations; More efficient, more compact, lighter and cooler | Benefits: Improved power density; Improved reliability; General purpose part can be used in both soft and hard switching topologies; Better light load effciency; Improved effciency in hard switching applications; Improved ease-of-use; Reduces possible ringing due to pcb layout and package parasitic effects | Target Applications: Consumer; Adapter; eMobility; PFC stages for server & telecom; SMPS; PC power; Solar; Lighting
***et Europe
Trans MOSFET N-CH 600V 13.8A 3-Pin(3+Tab) TO-220 Full-Pack
***ark
Mosfet, N-Ch, 600V, 13.8A, To-220Fp-3; Transistor Polarity:n Channel; Continuous Drain Current Id:13.8A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.25Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes
***ineon SCT
CoolMOS™ E6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation, PG-TO220-3, RoHS
***ineon
CoolMOS E6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease-of-use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. | Summary of Features: Easy control of switching behavior; Very high commutation ruggedness; Extremely low losses due to very low Figure of Merit (R DS(ON)*Q g) and E oss); Easy to use; Better light load efficiency compared to C3; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness; Better price performance in comparison to previous CoolMOS generations; More efficient, more compact, lighter and cooler | Benefits: Improved power density; Improved reliability; General purpose part can be used in both soft and hard switching topologies; Better light load effciency; Improved effciency in hard switching applications; Improved ease-of-use; Reduces possible ringing due to pcb layout and package parasitic effects | Target Applications: Consumer; Adapter; eMobility; PFC stages for server & telecom; SMPS; PC power; Solar; Lighting
***ure Electronics
Single N-Channel 650 V 310 mOhm 41 nC CoolMOS™ Power Mosfet - TO-220-3-FP
***ical
Trans MOSFET N-CH 700V 11.4A 3-Pin(3+Tab) TO-220FP Tube
***el Electronic
Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 8.2pF 50volts C0G +/-0.5pF
***ineon SCT
Replacement for 650V CoolMOS™ CFD2 is 600V CoolMOS™ CFD7, PG-TO220-3, RoHS
***nell
MOSFET, N-CH, 650V, 11.4A, TO-220FP-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 11.4A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.28ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4
***ineon
650V CoolMOS CFD2 is Infineon's second generation of market leading high voltage CoolMOS MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and therefore better EMI behavior gives this product a clear advantage in comparison with competitor parts. | Summary of Features: 650V technology with integrated fast body diode; Limited voltage overshoot during hard commutation; Significant Q g reduction compared to 600V CFD technology; Tighter R DS(ON) max to R DS(on) typ window; Easy to design-in; Lower price compared to 600V CFD technology | Benefits: Low switching losses due to low Q rr at repetitive commutation on body diode; Self limiting di/dt and dv/dt; Low Q oss; Reduced turn on and turn of delay times; Outstanding CoolMOS quality | Target Applications: Telecom; Server; Solar; HID lamp ballast; LED lighting; eMobility
***ure Electronics
Single N-Channel 600 V 280 mOhm 25.5 nC CoolMOS™ Power Mosfet - TO-220-3FP
***ical
Trans MOSFET N-CH 600V 13.8A 3-Pin(3+Tab) TO-220FP Tube
***ineon SCT
Infineons CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in, PG-TO220-3, RoHS
***nell
MOSFET, N-CH, 600V, 13.8A, TO-220FP-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 13.8A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.252ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs:
***ineon
Infineons CoolMOS P6 product family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use. | Summary of Features: Reduced gate charge (Q g); Higher V th; Good body diode ruggedness; Optimized integrated R g; Improved dv/dt from 50V/ns; CoolMOS quality with over 12 years manufacturing experience in superjunction technology | Benefits: Improved effciency especially in light load condition; Better efficiency in soft switching applications due to earlier turn-off; Suitable for hard- & soft-switching topologies; Optimized balance of efficiency and ease of use and good controllability of switching behavior; High robustness and better efficiency; Outstanding quality & reliability | Target Applications: PFC stages for server, telecom rectifier, PC silverbox, gaming consoles; PWM stages (TTF, LLC) for server, telecom rectifier, PC silverbox, gaming consoles
***emi
N-Channel Power MOSFET, SUPERFET® II, Easy Drive, 600 V, 15 A, 260 mΩ, TO-220F
*** Stop Electro
Power Field-Effect Transistor, 15A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
***el Electronic
FAIRCHILD SEMICONDUCTOR FCPF260N60E Power MOSFET, N Channel, 15 A, 600 V, 0.22 ohm, 10 V, 2.5 V
***Yang
Trans MOSFET N-CH 600V 15A 3-Pin(3+Tab) TO-220F - Rail/Tube
***ment14 APAC
MOSFET, N-CH, 600V, 15A, TO-220F; Transistor Polarity:N Channel; Continuous Drain Current Id:15A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.22ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:36W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-220F; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013); Operating Temperature Range:-55°C to +150°C
***rchild Semiconductor
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
***icroelectronics
N-channel 650 V, 0.198 Ohm typ., 15 A MDmesh M5 Power MOSFET in TO-220FP package
***ical
Trans MOSFET N-CH 650V 15A 3-Pin(3+Tab) TO-220FP Tube
***enic
650V 15A 220m´Î@10V7.5A 25W 5V@250Ã×A N Channel TO-220F(TO-220IS) MOSFETs ROHS
***ark
MOSFET, N-CH, 650V, 15A, TO-220FP; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:15A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
***r Electronics
Power Field-Effect Transistor, 15A I(D), 650V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ure Electronics
E Series N Channel 600 V 0.28 O 78 nC Flange Mount Power Mosfet - TO-220FP
***ical
Trans MOSFET N-CH 600V 15A 3-Pin(3+Tab) TO-220FP
***nell
MOSFET, N-CH, 600V, 15A, TO-220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:15A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.23ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:34W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-220FP; No. of Pins:3; MSL:MSL 1 - Unlimited
型号 制造商 描述 库存 价格
IPA65R280C6XKSA1
DISTI # IPA65R280C6XKSA1-ND		Infineon Technologies AGMOSFET N-CH 650V 13.8A TO220
RoHS: Compliant
Min Qty: 500
Container: Tube		Temporarily Out of Stock
  • 500:$1.6790
IPA65R280C6
DISTI # 726-IPA65R280C6		Infineon Technologies AGMOSFET N-Ch 700V 13.8A TO220FP-3 CoolMOS C6
RoHS: Compliant		0
  • 1:$2.5700
  • 10:$2.1900
  • 100:$1.7500
  • 500:$1.5300
IPA65R280C6XKSA1
DISTI # 726-IPA65R280C6XKSA1		Infineon Technologies AGMOSFET N-Ch 700V 13.8A TO220FP-3 CoolMOS C6
RoHS: Compliant		0
    图片 型号 描述
    IPA65R280C6

    Mfr.#: IPA65R280C6

    OMO.#: OMO-IPA65R280C6

    		 MOSFET N-Ch 700V 13.8A TO220FP-3 CoolMOS C6
    IPA65R280E6XKSA1

    Mfr.#: IPA65R280E6XKSA1

    OMO.#: OMO-IPA65R280E6XKSA1-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 650V 13.8A TO220
    IPA65R280C6 TK13A65D

    Mfr.#: IPA65R280C6 TK13A65D

    OMO.#: OMO-IPA65R280C6-TK13A65D-1190

    		 全新原装
    IPA65R280C6,65C6280

    Mfr.#: IPA65R280C6,65C6280

    OMO.#: OMO-IPA65R280C6-65C6280-1190

    		 全新原装
    IPA65R280C6XKSA1

    Mfr.#: IPA65R280C6XKSA1

    OMO.#: OMO-IPA65R280C6XKSA1-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 650V 13.8A TO220
    IPA65R280E6 TK13A65D

    Mfr.#: IPA65R280E6 TK13A65D

    OMO.#: OMO-IPA65R280E6-TK13A65D-1190

    		 全新原装
    IPA65R280E6(65E6280)

    Mfr.#: IPA65R280E6(65E6280)

    OMO.#: OMO-IPA65R280E6-65E6280--1190

    		 全新原装
    IPA65R280E6,65E6280

    Mfr.#: IPA65R280E6,65E6280

    OMO.#: OMO-IPA65R280E6-65E6280-1190

    		 全新原装
    IPA65R280E6

    Mfr.#: IPA65R280E6

    OMO.#: OMO-IPA65R280E6-124

    		 Darlington Transistors MOSFET N-Ch 700V 13.8A TO220FP-3 CoolMOS E6
    IPA65R280C6

    Mfr.#: IPA65R280C6

    OMO.#: OMO-IPA65R280C6-126

    		 IGBT Transistors MOSFET N-Ch 700V 13.8A TO220FP-3 CoolMOS C6
    可用性
    库存:
    Available
    订购:
    1500
    输入数量:
    IPA65R280C6XKSA1的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
    参考价格（美元）
    数量
    单价
    小计金额
    1
    US$2.56
    US$2.56
    10
    US$2.18
    US$21.80
    100
    US$1.74
    US$174.00
    500
    US$1.52
    US$760.00
    1000
    US$1.26
    US$1 260.00
    2500
    US$1.25
    US$3 125.00
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