SI3460BDV-T1-E3

Mfr. #:: SI3460BDV-T1-E3
制造商:: Vishay
描述:: IGBT Transistors MOSFET 20V 8.0A 3.5W
生命周期:: 制造商新产品。
数据表:: SI3460BDV-T1-E3 数据表
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更多信息:: SI3460BDV-T1-E3 更多信息

产品属性
属性值

制造商: 威世硅

产品分类: FET - 单

系列: 沟槽FETR

打包: Digi-ReelR 替代包装

部分别名: SI3460BDV-E3

单位重量: 0.000705 oz

安装方式: 贴片/贴片

商品名: 沟槽场效应晶体管

包装盒: SOT-23-6 Thin, TSOT-23-6

技术: 硅

工作温度: -55°C ~ 150°C (TJ)

安装型: 表面贴装

通道数: 1 Channel

供应商-设备-包: 6-TSOP

配置: 单身的

FET型: MOSFET N 沟道，金属氧化物

最大功率: 3.5W

晶体管型: 1 N-Channel

漏源电压 Vdss: 20V

输入电容-Ciss-Vds: 860pF @ 10V

FET-Feature: 标准

Current-Continuous-Drain-Id-25°C: 8A (Tc)

Rds-On-Max-Id-Vgs: 27 mOhm @ 5.1A, 4.5V

Vgs-th-Max-Id: 1V @ 250μA

栅极电荷-Qg-Vgs: 24nC @ 8V

钯功耗: 2 W

最高工作温度: + 150 C

最低工作温度: - 55 C

秋季时间: 6 ns 5 ns

上升时间: 60 ns 15 ns

VGS-栅极-源极-电压: 8 V

Id 连续漏极电流: 6.7 A

Vds-漏-源-击穿电压: 20 V

Rds-On-Drain-Source-Resistance: 27 mOhms

晶体管极性: N通道

典型关断延迟时间: 25 ns

典型开启延迟时间: 7 ns 5 ns

通道模式: 增强

Tags: SI3460B, SI3460, SI346, SI34, SI3

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We provide 90-360 days warranty.

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI3460BDV-T1-E3 更多信息

Si3 MOSFETs: Vishay/Siliconix Si3 MOSFETs are a TrenchFET® power MOSFETs operate in an enhancement mode. These Si3 MOSFETs are available in N-channel, P-channel, and N- and P-channel with ultra-low RDS(ON) for high-efficiency. These MOSFETs are also available in different VGS and VDS ranges. The Si3 MOSFETs incorporate Si technology and operate at a temperature ranging from -55ºC to 150ºC. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More

Market price

型号	制造商	描述	库存	价格
SI3460BDV-T1-E3 DISTI # V72:2272_09216670	Vishay Intertechnologies	Trans MOSFET N-CH Si 20V 6.7A 6-Pin TSOP T/R RoHS: Compliant	3143	3000:$0.3199 1000:$0.3268 500:$0.3826 250:$0.4720 100:$0.4772 25:$0.5950 10:$0.6020 1:$0.7147
SI3460BDV-T1-E3 DISTI # SI3460BDV-T1-E3CT-ND	Vishay Siliconix	MOSFET N-CH 20V 8A 6-TSOP RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	31388In Stock	1000:$0.4169 500:$0.5212 100:$0.7036 10:$0.9120 1:$1.0400
SI3460BDV-T1-E3 DISTI # SI3460BDV-T1-E3DKR-ND	Vishay Siliconix	MOSFET N-CH 20V 8A 6-TSOP RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	31388In Stock	1000:$0.4169 500:$0.5212 100:$0.7036 10:$0.9120 1:$1.0400
SI3460BDV-T1-E3 DISTI # SI3460BDV-T1-E3TR-ND	Vishay Siliconix	MOSFET N-CH 20V 8A 6-TSOP RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	30000In Stock	3000:$0.3669
SI3460BDV-T1-E3 DISTI # 25790201	Vishay Intertechnologies	Trans MOSFET N-CH Si 20V 6.7A 6-Pin TSOP T/R RoHS: Compliant	3143	3000:$0.3199 1000:$0.3268 500:$0.3826 250:$0.4720 100:$0.4772 25:$0.5950 20:$0.6020
SI3460BDV-T1-E3 DISTI # SI3460BDV-T1-E3	Vishay Intertechnologies	Trans MOSFET N-CH 20V 6.7A 6-Pin TSOP T/R - Tape and Reel (Alt: SI3460BDV-T1-E3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 24000	3000:$0.3149 6000:$0.3059 12000:$0.2979 18000:$0.2909 30000:$0.2829
SI3460BDV-T1-E3 DISTI # SI3460BDV-T1-E3	Vishay Intertechnologies	Trans MOSFET N-CH 20V 6.7A 6-Pin TSOP T/R - Cut TR (SOS) (Alt: SI3460BDV-T1-E3) RoHS: Not Compliant Min Qty: 1 Container: Cut Tape	Americas - 25	1:$0.6159 30:$0.5769 75:$0.5009 150:$0.4599 375:$0.3999 750:$0.3439 1500:$0.3429
SI3460BDV-T1-E3	Vishay Intertechnologies	Trans MOSFET N-CH 20V 6.7A 6-Pin TSOP T/R - Tape and Reel RoHS: Compliant Container: Reel	Americas - 0
SI3460BDV-T1-E3 DISTI # 75M5452	Vishay Intertechnologies	N CHANNEL MOSFET, 20V, 8A, TSOP,Transistor Polarity:N Channel,Continuous Drain Current Id:8A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.023ohm,Rds(on) Test Voltage Vgs:8V,Threshold Voltage Vgs:1V,No. of Pins:6Pins RoHS Compliant: Yes	0	1:$0.9200 10:$0.7340 25:$0.6750 50:$0.6160 100:$0.5570 500:$0.4600 1000:$0.3680
SI3460BDV-T1-E3 DISTI # 85W0179	Vishay Intertechnologies	N CHANNEL MOSFET, 20V, 8A, TSOP, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:8A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.023ohm,Rds(on) Test Voltage Vgs:8V,Threshold Voltage Vgs:1V RoHS Compliant: Yes	0	1:$0.3340 3000:$0.3340
SI3460BDV-T1-E3. DISTI # 16AC0254	Vishay Intertechnologies	Transistor Polarity:N Channel,Continuous Drain Current Id:8A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.023ohm,Rds(on) Test Voltage Vgs:8V,Threshold Voltage Vgs:1V,Power Dissipation Pd:2W,No. of Pins:6Pins RoHS Compliant: No	24000	1:$0.3340 3000:$0.3340
SI3460BDV-T1-E3 DISTI # 70026203	Vishay Siliconix	N-CHANNEL 20-V (D-S) MOSFET RoHS: Compliant	0	3000:$0.3770 6000:$0.3570 9000:$0.3160
SI3460BDV-T1-E3	Vishay Intertechnologies	Single N-Channel 20 V 0.027 Ohms Surface Mount Power Mosfet - TSOP-6 RoHS: Compliant	12000Reel	3000:$0.5100
SI3460BDV-T1-E3 DISTI # 781-SI3460BDV-E3	Vishay Intertechnologies	MOSFET 20V 8.0A 3.5W RoHS: Compliant	4970	1:$0.9200 10:$0.7340 100:$0.5570 500:$0.4600 1000:$0.3680 3000:$0.3340
SI3460BDV-T1-E3	VISIL		221
SI3460BDV-T1-E3	Vishay Intertechnologies	MOSFET 20V 8.0A 3.5W RoHS: Compliant	Americas - 3000
SI3460BDV-T1-E3 DISTI # C1S803601192530	Vishay Intertechnologies	MOSFETs RoHS: Compliant	3143	250:$0.4720 100:$0.4772 25:$0.5950 10:$0.6020

图片	型号	描述
	Mfr.#: SI3460BDV-T1-E3 OMO.#: OMO-SI3460BDV-T1-E3	MOSFET 20V 8.0A 3.5W
	Mfr.#: SI3460BDV-T1-GE3 OMO.#: OMO-SI3460BDV-T1-GE3	MOSFET 20V 8.0A 3.5W 27mohm @ 4.5V
	Mfr.#: SI3460BDV-T1-E3 OMO.#: OMO-SI3460BDV-T1-E3-VISHAY	IGBT Transistors MOSFET 20V 8.0A 3.5W
	Mfr.#: SI3460BDV-T1-E312+ OMO.#: OMO-SI3460BDV-T1-E312--1190	全新原装
	Mfr.#: SI3460BDV-T1-GE3 OMO.#: OMO-SI3460BDV-T1-GE3-VISHAY	MOSFET N-CH 20V 8A 6-TSOP

SI3460BDV-T1-E3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes