IKP08N65F5XKSA1

IKP08N65F5XKSA1
Mfr. #:
IKP08N65F5XKSA1
制造商:
Infineon Technologies
描述:
IGBT Transistors IGBT PRODUCTS
生命周期:
制造商新产品。
数据表:
IKP08N65F5XKSA1 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:
IKP08N65F5XKSA1 更多信息
产品属性
属性值
制造商:
英飞凌
产品分类:
IGBT晶体管
RoHS:
Y
技术:
包装/案例:
TO-220-3
安装方式:
通孔
配置:
单身的
集电极-发射极电压 VCEO 最大值:
650 V
集电极-发射极饱和电压:
1.6 V
最大栅极发射极电压:
20 V
25 C 时的连续集电极电流:
18 A
Pd - 功耗:
70 W
最低工作温度:
- 40 C
最高工作温度:
+ 175 C
系列:
TRENCHSTOP 5 F5
打包:
管子
品牌:
英飞凌科技
栅极-发射极漏电流:
100 nA
产品类别:
IGBT晶体管
出厂包装数量:
500
子类别:
IGBT
商品名:
战壕
第 # 部分别名:
IKP08N65F5 SP000973408
单位重量:
0.211644 oz
Tags
IKP08, IKP0, IKP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 650V 18A 70000mW 3-Pin(3+Tab) TO-220 Tube
***et Europe
Trans IGBT Chip N-CH 650V 18A 3-Pin TO-220 Tube
***i-Key
IGBT 650V 18A 70W PG-TO220-3
***ronik
IGBT 650V 8A 1,6V TO220-3
***ark
IGBT, 650V, 8A, TO220-3
***ukat
650V 18A 70W TO220
***ineon
Infineons new TRENCHSTOP5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the markets high efficiency demands of tomorrow. | Summary of Features: 650V breakthrough voltage; Compared to Infineons best-in-class HighSpeed 3 family; Factor 2.5 lower Q g; Factor 2 reduction in switching losses; 200mV reduction in V CE(sat); Co-packed with Infineons new Rapid Si-diode technology; Low C OES/E OSS; Mild positive temperature coefficient V CE(sat); Temperature stability of V f | Benefits: Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability; 50V increase in the bus voltage possible without compromising reliability; Higher power density design | Target Applications: Uninterruptible Power Supplies; Welding
TRENCHSTOP™ 5 IGBTs
Infineon TRENCHSTOP™ 5 IGBTs are the next generation of thin wafer IGBT (Insulated Gate Bipolar Transistor) that feature significantly lower conduction and switching losses compared to currently leading solutions. TRENCHSTOP 5 is designed for applications where switching >10kHz. The wafer thickness has been reduced by >25%, which enables a dramatic improvement in both switching and conduction losses, while providing a breakthrough voltage of 650V. This quantum leap in efficiency opens up new opportunities for designers to explore.
TRENCHSTOP™ 5 F5 Discrete IGBTs
Infineon TRENCHSTOP™ 5 F5 Discrete IGBTs are optimized for switching >60kHz to deliver optimum efficiency, bridging the gap between MOSFETs and IGBTs. The F5 series features significantly lower switching losses compared to currently leading solutions. Targeting topologies are boost stages, PFC (AC-DC) stages and high voltage DC-DC topologies commonly found in applications like Uninterruptible Power Supplies, UPS, Inverterized Welding Machines and Switch Mode Power Supplies (SMPS). The 650V TRENCHSTOP™ 5 F5 IGBTs are targeted for low inductance designs in combination with SiC diodes to offer 1% higher efficiency compared to 650V TRENCHSTOP™ 5 H5 family. The F5 products require higher design in effort, but rewards are higher.
型号 制造商 描述 库存 价格
IKP08N65F5XKSA1
DISTI # IKP08N65F5XKSA1-ND
Infineon Technologies AGIGBT 650V 18A 70W PG-TO220-3
RoHS: Compliant
Min Qty: 1
Container: Tube
197In Stock
  • 100:$1.5040
  • 10:$1.8710
  • 1:$2.0800
IKP08N65F5XKSA1
DISTI # IKP08N65F5XKSA1
Infineon Technologies AGTrans IGBT Chip N-CH 650V 18A 3-Pin TO-220 Tube - Rail/Tube (Alt: IKP08N65F5XKSA1)
RoHS: Compliant
Min Qty: 500
Container: Tube
Americas - 0
  • 500:$0.9689
  • 1000:$0.9339
  • 2000:$0.8999
  • 3000:$0.8689
  • 5000:$0.8539
IKP08N65F5XKSA1
DISTI # SP000973408
Infineon Technologies AGTrans IGBT Chip N-CH 650V 18A 3-Pin TO-220 Tube (Alt: SP000973408)
RoHS: Compliant
Min Qty: 1
Container: Tube
Europe - 0
  • 1:€1.0549
  • 10:€0.9589
  • 25:€0.8789
  • 50:€0.8439
  • 100:€0.8109
  • 500:€0.7809
  • 1000:€0.7529
IKP08N65F5
DISTI # 726-IKP08N65F5-ES
Infineon Technologies AGIGBT Transistors ENGINEERING SAMPLES TRENCHSTOP-5 IGBT
RoHS: Compliant
367
  • 1:$1.9300
  • 10:$1.6400
  • 100:$1.3200
  • 500:$1.1500
  • 1000:$0.9600
  • 2500:$0.8900
  • 5000:$0.8600
IKP08N65F5XKSA1
DISTI # 726-IKP08N65F5XKSA1
Infineon Technologies AGIGBT Transistors IGBT PRODUCTS
RoHS: Compliant
314
  • 1:$1.9800
  • 10:$1.6900
  • 100:$1.3500
  • 500:$1.1800
  • 1000:$0.9760
  • 2500:$0.9080
  • 5000:$0.8750
IKP08N65F5XKSA1
DISTI # IKP08N65F5
Infineon Technologies AG650V 18A 70W TO220
RoHS: Compliant
0
  • 1:€4.9300
  • 10:€1.9300
  • 50:€0.9300
  • 100:€0.8500
IKP08N65F5XKSA1
DISTI # 2363285
Infineon Technologies AGIGBT, 650V, 8A, TO220-3
RoHS: Compliant
0
  • 5:£1.3900
  • 25:£1.2800
  • 100:£1.0200
  • 250:£0.9550
  • 500:£0.8900
图片 型号 描述
IRGB4060DPBF

Mfr.#: IRGB4060DPBF

OMO.#: OMO-IRGB4060DPBF-INFINEON-TECHNOLOGIES

IGBT Transistors 600V UltraFast Trench IGBT
可用性
库存:
314
订购:
2297
输入数量:
IKP08N65F5XKSA1的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格(美元)
数量
单价
小计金额
1
US$1.97
US$1.97
10
US$1.68
US$16.80
100
US$1.34
US$134.00
500
US$1.17
US$585.00
1000
US$0.98
US$976.00
2500
US$0.91
US$2 270.00
5000
US$0.88
US$4 375.00
10000
US$0.84
US$8 410.00
从...开始
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