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IKD06N60RATMA1

IKD06N60RATMA1
Mfr. #:
IKD06N60RATMA1
制造商:
Infineon Technologies
描述:
IGBT Transistors IGBT w/ INTG DIODE 600V 12A
生命周期:
制造商新产品。
数据表:
IKD06N60RATMA1 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
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ECAD Model:
产品属性
属性值
制造商：
英飞凌
产品分类：
IGBT晶体管
RoHS：
Y
技术：
硅
包装/案例：
TO-252-3
安装方式：
贴片/贴片
配置：
单身的
集电极-发射极电压 VCEO 最大值：
600 V
集电极-发射极饱和电压：
1.65 V
最大栅极发射极电压：
20 V
25 C 时的连续集电极电流：
12 A
Pd - 功耗：
100 W
最低工作温度：
- 40 C
最高工作温度：
+ 175 C
系列：
RC
打包：
卷轴
品牌：
英飞凌科技
栅极-发射极漏电流：
100 nA
产品类别：
IGBT晶体管
出厂包装数量：
2500
子类别：
IGBT
商品名：
战壕
第 # 部分别名：
IKD06N60R SP000964628
Tags
IKD06N60RA, IKD06N60R, IKD06N6, IKD06N, IKD06, IKD0, IKD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 600V 12A 100000mW Automotive 3-Pin(2+Tab) DPAK T/R
***ment14 APAC
IGBT+ DIODE,600V,4A,TO252; Transistor Type:IGBT; DC Collector Current:6A; Collector Emitter Voltage Vces:2.1V; Power Dissipation Pd:100W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-40°C to +175°C; Transistor Case Style:TO-252; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Power Dissipation Max:100W
***ineon
RC-Drives IGBT technology has been developed by Infineon as a cost optimized solution for sensitive consumer drives market. This basic technology provides outstanding performance for permanent magnet synchronous and brushless DC motor drives. | Summary of Features: Optimized parameters for up to 20% lower switching losses; Operating range of DC to 30kHz; Max junction temperature 175C; Short circuit capability of 5s; Very tight parameter distribution; Best in class current versus package size performance; Smooth switching performance leading to low EMI levels | Benefits: Excellent cost/performance for hard switching applications; Outstanding temperature stability; Very good EMI behavior; Up to 60% space saving on the PCB; Higher reliability due to monolithically integrated IGBT & diode due to less thermal cycling during switching | Target Applications: Fridge compressors; Pumps; Fans; Home appliance; Industrial drives; Aircon
***ical
Trans IGBT Chip N-CH 600V 12A 77000mW 3-Pin(2+Tab) DPAK T/R
***SIT Distribution GmbH
Insulated Gate Bipolar Transistor, 12A I(C), 600V V(BR)CES, N-Channel, TO-252AA
***el Electronic
Multilayer Ceramic Capacitors MLCC - Leaded 0.015uF 100volts X7R LS=5mm +/-10%
***ineon
Target Applications: Dishwasher; Fan; Lighting HID; Pump; Refridgeration
***ark
Igbt, Single, 600V, 12A, To-252Aa-3
***i-Key Marketplace
IRGR4045 - DISCRETE IGBT WITH AN
***or
IGBT W/ULTRAFAST SOFT RECOVERY D
***nell
IGBT, SINGLE, 600V, 12A, TO-252AA-3; DC Collector Current: 12A; Collector Emitter Saturation Voltage Vce(on): 1.7V; Power Dissipation Pd: 77W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-252AA; No. of
***ical
Trans IGBT Chip N-CH 600V 12A 3-Pin(2+Tab) TO-252
***nell
TRANSISTOR, IGBT, 600V, 12A, TO-252; DC Collector Current: 12A; Collector Emitter Saturation Voltage Vce(on): 1.5V; Power Dissipation Pd: 88W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: TRENCHSTOP™ Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ineon SCT
The 600 V, 6 A single TRENCHSTOP™ IGBT3 in a TO252 package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept, PG-TO252-3, RoHS
***ineon
Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery Emitter Controlled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. | Summary of Features: Lowest V ce(sat) drop for lower conduction losses; Low switching losses; Easy parallel switching capability due to positive temperature coefficient in V ce(sat); Very soft, fast recovery anti-parallel Emitter Controlled Diode; High ruggedness, temperature stable behavior; Low EMI emissions; Low gate charge; Very tight parameter distribution | Benefits: Highest efficiency low conduction and switching losses; Comprehensive portfolio in 600V and 1200V for flexibility of design; High device reliability | Target Applications: UPS; Solar Inverters; Major Home Appliances; Welding; Air conditioning; Industrial Drives; Other hard switching applications
***ical
Trans IGBT Chip N-CH 600V 11A 3-Pin(2+Tab) DPAK Tube
***nsix Microsemi
Insulated Gate Bipolar Transistor, 11A I(C), 600V V(BR)CES, N-Channel, TO-252AA
*** Electronic Components
IGBT Transistors 600V TRENCH IGBT ULTRAFAST
***ark
Tape And Reel / G6, 600V, 7A, Dpakcopak Trr
***ment14 APAC
IGBT, SINGLE, 600V, 11A, TO-252
***S
French Electronic Distributor since 1988
***nell
IGBT, SINGLE, 600V, 11A, TO-252; DC Collector Current: 11A; Collector Emitter Saturation Voltage Vce(on): 1.75V; Power Dissipation Pd: 58W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-252; No. of Pins:
***ical
Trans IGBT Chip N-CH 600V 10A 83000mW 3-Pin(2+Tab) DPAK T/R
***icroelectronics
Trench gate field-stop IGBT, H series 600 V, 5 A high speed
***ure Electronics
H Series 600 V 10 A SMT Trench Gate Field-Stop IGBT - TO-252
***nell
IGBT, 600V, 10A, 175DEG C, 83W; DC Collector Current: 10A; Collector Emitter Saturation Voltage Vce(on): 1.5V; Power Dissipation Pd: 83W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: H Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
***ical
Trans IGBT Chip N-CH 600V 15A 55000mW 3-Pin(2+Tab) DPAK T/R
***ure Electronics
STGD7NB60S Series 600 V 7 A SMT N-Channel Power MESHTM IGBT - TO-252-3, DPAK
***r Electronics
Insulated Gate Bipolar Transistor, 15A I(C), 600V V(BR)CES, N-Channel, TO-252AA
***ser
IGBTs Insulated Gate Bipolar Transistor N-Ch 600 Volt 7 Amp
***icroelectronics SCT
Short-circuit rugged IGBT, DPAK, Tape and Reel
***(Formerly Allied Electronics)
600V ULTRAFAST 8-60 KHZ DISCRETE IGBT IN A D-PAK PACKAGE | Infineon IRG4RC10UPBF
***ark
IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:8.5A; Collector Emitter Saturation Voltage, Vce(sat):2.6V; Power Dissipation, Pd:38W; Package/Case:TO-252AA ;RoHS Compliant: Yes
***nell
IGBT, 600V, 8.5A, D-PAK; Transistor Type:IGBT; Transistor Polarity:N; Voltage, Vces:600V; Current Ic Continuous a Max:8.5A; Voltage, Vce Sat Max:2.6V; Power Dissipation:38W; Case Style:D-PAK; Termination Type:SMD; Collector-to-Emitter Breakdown Voltage:600V; Current, Icm Pulsed:34A; Power, Pd:38W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Time, Fall Max:180ns; Time, Rise:11ns; Transistors, No. of:1
型号 制造商 描述 库存 价格
IKD06N60RATMA1
DISTI # V72:2272_06384472		Infineon Technologies AGTrans IGBT Chip N-CH 600V 12A Automotive 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant		2480
  • 75000:$0.5743
  • 30000:$0.5803
  • 15000:$0.5862
  • 6000:$0.5921
  • 3000:$0.5981
  • 1000:$0.6042
  • 500:$0.7722
  • 250:$0.8037
  • 100:$0.8930
  • 50:$0.9328
  • 25:$1.0364
  • 10:$1.1516
  • 1:$1.4820
IKD06N60RATMA1
DISTI # IKD06N60RATMA1CT-ND		Infineon Technologies AGIGBT 600V 12A TO252-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		2257In Stock
  • 1000:$0.6763
  • 500:$0.8567
  • 100:$1.0370
  • 10:$1.3300
  • 1:$1.4900
IKD06N60RATMA1
DISTI # IKD06N60RATMA1DKR-ND		Infineon Technologies AGIGBT 600V 12A TO252-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		2257In Stock
  • 1000:$0.6763
  • 500:$0.8567
  • 100:$1.0370
  • 10:$1.3300
  • 1:$1.4900
IKD06N60RATMA1
DISTI # IKD06N60RATMA1TR-ND		Infineon Technologies AGIGBT 600V 12A TO252-3
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 5000:$0.5837
  • 2500:$0.6128
IKD06N60RATMA1
DISTI # 26195465		Infineon Technologies AGTrans IGBT Chip N-CH 600V 12A Automotive 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant		2480
  • 11:$1.4820
IKD06N60RATMA1
DISTI # SP000964628		Infineon Technologies AGTrans IGBT Chip N-CH 600V 12A 3-Pin TO-252 T/R (Alt: SP000964628)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Europe - 200030
  • 25000:€0.4669
  • 15000:€0.5029
  • 10000:€0.5449
  • 5000:€0.5939
  • 2500:€0.7259
IKD06N60RATMA1
DISTI # IKD06N60RATMA1		Infineon Technologies AGTrans IGBT Chip N-CH 600V 12A 3-Pin TO-252 T/R - Tape and Reel (Alt: IKD06N60RATMA1)
RoHS: Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 25000:$0.5289
  • 15000:$0.5389
  • 10000:$0.5579
  • 5000:$0.5789
  • 2500:$0.5999
IKD06N60RATMA1
DISTI # 726-IKD06N60RATMA1		Infineon Technologies AGIGBT Transistors IGBT w/ INTG DIODE 600V 12A
RoHS: Compliant		2455
  • 1:$1.3600
  • 10:$1.1600
  • 100:$0.8970
  • 500:$0.7930
  • 1000:$0.6260
  • 2500:$0.5550
  • 10000:$0.5340
IKD06N60RATMA1Infineon Technologies AG 
RoHS: Not Compliant		2500
  • 1000:$0.4700
  • 500:$0.5000
  • 100:$0.5200
  • 25:$0.5400
  • 1:$0.5800
图片 型号 描述
1EDI60I12AF

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OMO.#: OMO-1EDI60I12AF

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6ED003L06F2XUMA1

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OMO.#: OMO-6ED003L06F2XUMA1

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IKD06N60RF

Mfr.#: IKD06N60RF

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AUIRGR4045D

Mfr.#: AUIRGR4045D

OMO.#: OMO-AUIRGR4045D

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Mfr.#: UMK105CG151KV-F

OMO.#: OMO-UMK105CG151KV-F

 Multilayer Ceramic Capacitors MLCC - SMD/SMT 150pF 50V C0G +/-10% 0402 Gen Purp
ATS143

Mfr.#: ATS143

OMO.#: OMO-ATS143

 Crystals 14.31818MHz
AUIRGR4045D

Mfr.#: AUIRGR4045D

OMO.#: OMO-AUIRGR4045D-INFINEON-TECHNOLOGIES

 IGBT Transistors 600V LO VCEON IGBT HALF BRIDGE 2 CH
1EDI60I12AF

Mfr.#: 1EDI60I12AF

OMO.#: OMO-1EDI60I12AF-91

 Gate Drivers DRIVER IC
UMK105CG151KV-F

Mfr.#: UMK105CG151KV-F

OMO.#: OMO-UMK105CG151KV-F-TAIYO-YUDEN

 Multilayer Ceramic Capacitors MLCC - SMD/SMT Midhigh 0402 C0G 50V 150pF 10%
ATS143

Mfr.#: ATS143

OMO.#: OMO-ATS143-CTS-ELECTRONIC-COMPONENTS

 Crystals 14.31818MHz
可用性
库存:
Available
订购:
1985
输入数量:
IKD06N60RATMA1的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格（美元）
数量
单价
小计金额
1
US$1.36
US$1.36
10
US$1.16
US$11.60
100
US$0.90
US$89.70
500
US$0.79
US$396.50
1000
US$0.63
US$626.00
由于2021年半导体供不应求，低于2021年之前的正常价格，请发询价确认。
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