We guarantee 100% customer satisfaction.
Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.
we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.
Email: [email protected]
| 型号 | 制造商 | 描述 | 库存 | 价格 |
|---|---|---|---|---|
| FMI49N20T2 DISTI # FE0000000000989 | Fuji Electric Co Ltd | Power Field-Effect Transistor, 49A I(D),200V,0.047ohm, 1-Element, N-Channel,Silicon,Metal-oxide Semiconductor FET RoHS: Compliant | 0 in Stock0 on Order |
| 图片 | 型号 | 描述 |
|---|---|---|
|
Mfr.#: FMI07N50E OMO.#: OMO-FMI07N50E-1190 |
Power Field-Effect Transistor, 6.5A I(D),500V,0.85ohm, 1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET |
|
|
Mfr.#: FMI11N60E OMO.#: OMO-FMI11N60E-1190 |
Power Field-Effect Transistor, 11A I(D),600V,0.75ohm, 1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET |
|
|
Mfr.#: FMI12N50E OMO.#: OMO-FMI12N50E-1190 |
Power Field-Effect Transistor, 12A I(D),500V,0.52ohm, 1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET |
|
|
Mfr.#: FMI13N60E OMO.#: OMO-FMI13N60E-1190 |
Power Field-Effect Transistor, 13A I(D),600V,0.58ohm, 1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET |
|
|
Mfr.#: FMI20N50E OMO.#: OMO-FMI20N50E-1190 |
Power Field-Effect Transistor, 20A I(D),500V,0.31ohm, 1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET |
|
|
Mfr.#: FMI27851 OMO.#: OMO-FMI27851-1190 |
全新原装 |
|
|
Mfr.#: FMI45D OMO.#: OMO-FMI45D-1190 |
全新原装 |
|
|
Mfr.#: FMIG100J7CSB1W OMO.#: OMO-FMIG100J7CSB1W-1190 |
全新原装 |
|
|
Mfr.#: FMIPSS-125-101M OMO.#: OMO-FMIPSS-125-101M-1190 |
全新原装 |
|
|
Mfr.#: FMIS-19581/82 OMO.#: OMO-FMIS-19581-82-1190 |
全新原装 |