SIZ904DT-T1-GE3

Mfr. #:: SIZ904DT-T1-GE3
制造商:: Vishay
描述:: MOSFET 2N-CH 30V 12A POWERPAIR
生命周期:: 制造商新产品。
数据表:: SIZ904DT-T1-GE3 数据表
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更多信息:: SIZ904DT-T1-GE3 更多信息

产品属性
属性值

制造商: 威世硅

产品分类: FET - 阵列

系列: 沟槽FETR

打包: Digi-ReelR 替代包装

部分别名: SIZ904DT-GE3

安装方式: 贴片/贴片

包装盒: 6-PowerPair

技术: 硅

工作温度: -55°C ~ 150°C (TJ)

安装型: 表面贴装

通道数: 2 Channel

供应商-设备-包: 6-PowerPair

配置: 双重的

FET型: 2 N-Channel (Half Bridge)

最大功率: 20W, 33W

晶体管型: 2 N-Channel

漏源电压 Vdss: 30V

输入电容-Ciss-Vds: 435pF @ 15V

FET-Feature: 逻辑电平门

Current-Continuous-Drain-Id-25°C: 12A, 16A

Rds-On-Max-Id-Vgs: 24 mOhm @ 7.8A, 10V

Vgs-th-Max-Id: 2.5V @ 250μA

栅极电荷-Qg-Vgs: 12nC @ 10V

钯功耗: 33 W

最高工作温度: + 150 C

最低工作温度: - 55 C

秋季时间: 10 ns 8 ns

上升时间: 10 ns 9 ns

VGS-栅极-源极-电压: 20 V

Id 连续漏极电流: 16 A

Vds-漏-源-击穿电压: 30 V

Rds-On-Drain-Source-Resistance: 24 mOhms

晶体管极性: N通道

典型关断延迟时间: 15 nS 14 nS

Qg-门电荷: 3.8 nC 7.3 nC

Tags: SIZ904, SIZ90, SIZ9, SiZ

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SIZ904DT-T1-GE3 更多信息

Integrated MOSFET Solutions: Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance.

PowerPAIR® Dual-MOSFETs: Vishay PowerPAIR® Dual-MOSFETs combine optimized combinations of MOSFETs in one compact package. The co-packaged PowerPAIR Dual-MOSFETs use less space and offer increased performance over separate discretes. By having the two MOSFETs already connected inside the PowerPAIR package, layouts are made easier and parasitic inductance from PCB traces are reduced, increasing efficiency.

Market price

型号	制造商	描述	库存	价格
SIZ904DT-T1-GE3 DISTI # SIZ904DT-T1-GE3CT-ND	Vishay Siliconix	MOSFET 2N-CH 30V 12A POWERPAIR RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
SIZ904DT-T1-GE3 DISTI # SIZ904DT-T1-GE3DKR-ND	Vishay Siliconix	MOSFET 2N-CH 30V 12A POWERPAIR RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
SIZ904DT-T1-GE3 DISTI # SIZ904DT-T1-GE3TR-ND	Vishay Siliconix	MOSFET 2N-CH 30V 12A POWERPAIR RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Temporarily Out of Stock	3000:$0.5205
SIZ904DT-T1-GE3 DISTI # SIZ904DT-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 9.5A/14.5A 8-Pin PowerPAIR T/R - Tape and Reel (Alt: SIZ904DT-T1-GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0
SIZ904DT-T1-GE3 DISTI # 70616574	Vishay Siliconix	SIZ904DT-T1-GE3 Dual N-channel MOSFET Transistor,9.5A,14.5A,30V,8-Pin PowerPAIR RoHS: Compliant	0	300:$0.6600 600:$0.6500 1500:$0.6400 3000:$0.6200
SIZ904DT-T1-GE3 DISTI # 78-SIZ904DT-T1-GE3	Vishay Intertechnologies	MOSFET 30V Vds 20V Vgs PowerPAIR 6 x 5 RoHS: Compliant	0	1:$1.1900 10:$0.9740 100:$0.7470 500:$0.6430 1000:$0.6080 3000:$0.5640
SIZ904DTT1GE3	Vishay Intertechnologies	RoHS: Compliant	Europe - 3000
SIZ904DT-T1-GE3	Vishay Intertechnologies	MOSFET 30V Vds 20V Vgs PowerPAIR 6 x 5	Americas -

图片	型号	描述
	Mfr.#: SIZ904DT-T1-GE3 OMO.#: OMO-SIZ904DT-T1-GE3	MOSFET 30V Vds 20V Vgs PowerPAIR 6 x 5
	Mfr.#: SIZ904DT OMO.#: OMO-SIZ904DT-1190	全新原装
	Mfr.#: SIZ904DT-T1-GE3 OMO.#: OMO-SIZ904DT-T1-GE3-VISHAY	MOSFET 2N-CH 30V 12A POWERPAIR
	Mfr.#: SIZ904DTT1GE3 OMO.#: OMO-SIZ904DTT1GE3-1190	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

SIZ904DT-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes