IGP20N65H5

Mfr. #:: IGP20N65H5
制造商:: Infineon Technologies
描述:: IGBT Transistors IGBT PRODUCTS TrenchStop 5
生命周期:: 制造商新产品。
数据表:: IGP20N65H5 数据表
交货:: DHL FedEx Ups TNT EMS
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ECAD Model:
更多信息:: IGP20N65H5 更多信息

产品属性
属性值

制造商: 英飞凌科技

产品分类: IGBT - 单

打包: 管子

部分别名: IGP20N65H5XKSA1

单位重量: 0.211644 oz

安装方式: 通孔

包装盒: TO-220-3

配置: 单身的

钯功耗: 125 W

最高工作温度: + 175 C

最低工作温度: - 40 C

集电极-发射极-电压-VCEO-Max: 650 V

集电极-发射极-饱和-电压: 1.65 V

25-C 时的连续集电极电流: 42 A

栅极-发射极-漏电流: 100 nA

最大栅极发射极电压: 20 V

Tags: IGP20N65H, IGP20N65, IGP20, IGP2, IGP

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IGP20N65H5 更多信息

TRENCHSTOP™ 5 IGBTs: Infineon TRENCHSTOP™ 5 IGBTs are the next generation of thin wafer IGBT (Insulated Gate Bipolar Transistor) that feature significantly lower conduction and switching losses compared to currently leading solutions. TRENCHSTOP 5 is designed for applications where switching >10kHz. The wafer thickness has been reduced by >25%, which enables a dramatic improvement in both switching and conduction losses, while providing a breakthrough voltage of 650V. This quantum leap in efficiency opens up new opportunities for designers to explore.

TRENCHSTOP™ 5 H5 (High Speed 5) IGBTs: Infineon TRENCHSTOP™ 5 H5 (High Speed 5) IGBTs are high speed and designed with ultimate efficiency for applications switching faster than 30kHz. The High Speed 5 IGBTs feature TRENCHSTOP™ 5 technology and are co-packed with a RAPID 1 fast and soft antiparallel diode. The H5 IGBTs offer best-in-class efficiency in hard switching and resonant topologies and are a plug-and-play replacement for previous generation IGBTs. Typical applications include UPS, welding converters, solar string inverters, and mid to high range switching frequency converters.

Market price

型号	制造商	描述	库存	价格
IGP20N65H5XKSA1 DISTI # SP001133070	Infineon Technologies AG	Trans IGBT Chip N-CH 650V 20A 3-Pin TO-220 Tube (Alt: SP001133070) RoHS: Compliant Min Qty: 1 Container: Tube	Europe - 15	1000:€0.8449 500:€0.8609 100:€0.8739 50:€0.8889 25:€0.9529 10:€1.1459 1:€1.4719
IGP20N65H5XKSA1 DISTI # IGP20N65H5XKSA1	Infineon Technologies AG	Trans IGBT Chip N-CH 650V 20A 3-Pin TO-220 Tube - Bulk (Alt: IGP20N65H5XKSA1) RoHS: Compliant Min Qty: 397 Container: Bulk	Americas - 0	3970:$0.7999 1985:$0.8149 1191:$0.8429 794:$0.8749 397:$0.9069
IGP20N65H5XKSA1 DISTI # IGP20N65H5XKSA1	Infineon Technologies AG	Trans IGBT Chip N-CH 650V 20A 3-Pin TO-220 Tube - Rail/Tube (Alt: IGP20N65H5XKSA1) RoHS: Compliant Min Qty: 500 Container: Tube	Americas - 0	5000:$0.9239 3000:$0.9409 2000:$0.9739 1000:$1.0099 500:$1.0479
IGP20N65H5 DISTI # 726-IGP20N65H5	Infineon Technologies AG	IGBT Transistors IGBT PRODUCTS TrenchStop 5 RoHS: Compliant	149	1:$2.1400 10:$1.8100 100:$1.4500 500:$1.2700 1000:$1.0500 2500:$0.9830 5000:$0.9460
IGP20N65H5XKSA1	Infineon Technologies AG	Insulated Gate Bipolar Transistor, 42A I(C), 650V V(BR)CES, N-Channel, TO-220AB RoHS: Compliant	200	1000:$0.8300 500:$0.8700 100:$0.9100 25:$0.9500 1:$1.0200
IGP20N65H5 DISTI # IGP20N65H5	Infineon Technologies AG	Transistor: IGBT,650V,21A,63W,TO220-3,Series: H5	53	1:$1.5500 3:$1.3900 10:$1.2300 50:$1.0600
IGP20N65H5XKSA1 DISTI # IGP20N65H5	Infineon Technologies AG	650V 42A 125W TO220 RoHS: Compliant	470	1:€1.5500 10:€1.1500 50:€0.9500 100:€0.8700

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