IPI045N10N3 G

Mfr. #:: IPI045N10N3 G
制造商:: Infineon Technologies
描述:: IGBT Transistors MOSFET N-Ch 100V 100A I2PAK-3 OptiMOS 3
生命周期:: 制造商新产品。
数据表:: IPI045N10N3 G 数据表
交货:: DHL FedEx Ups TNT EMS
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ECAD Model:

产品属性
属性值

制造商: 英飞凌科技

产品分类: 晶体管 - FET、MOSFET - 单

系列: OptiMOS 3

打包: 管子

部分别名: IPI045N10N3GXK IPI045N10N3GXKSA1 SP000683068

单位重量: 0.084199 oz

安装方式: 通孔

商品名: 优化MOS

包装盒: I2PAK-3

技术: 硅

通道数: 1 Channel

配置: 单身的

晶体管型: 1 N-Channel

钯功耗: 214 W

最高工作温度: + 175 C

最低工作温度: - 55 C

秋季时间: 14 ns

上升时间: 59 ns

VGS-栅极-源极-电压: 20 V

Id 连续漏极电流: 100 A

Vds-漏-源-击穿电压: 100 V

Rds-On-Drain-Source-Resistance: 4.5 mOhms

晶体管极性: N通道

典型关断延迟时间: 48 ns

典型开启延迟时间: 27 ns

通道模式: 增强

Tags: IPI045N10N3G, IPI045N10N3, IPI045, IPI04, IPI0, IPI

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

Market price

型号	制造商	描述	库存	价格
IPI045N10N3GXKSA1 DISTI # IPI045N10N3GXKSA1-ND	Infineon Technologies AG	MOSFET N-CH 100V 100A TO262-3 RoHS: Compliant Min Qty: 1 Container: Tube	206In Stock	1000:$1.7815 500:$2.1123 100:$2.6086 10:$3.1810 1:$3.5600
IPI045N10N3GXK DISTI # IPI045N10N3GXK-ND	Infineon Technologies AG	MOSFET N-CH 100V 100A TO262-3 RoHS: Compliant Container: Tube	Limited Supply - Call
IPI045N10N3GXK DISTI # IPI045N10N3GXKSA1	Infineon Technologies AG	Trans MOSFET N-CH 100V 100A 3-Pin(3+Tab) TO-262 - Rail/Tube (Alt: IPI045N10N3GXKSA1) RoHS: Compliant Min Qty: 500 Container: Tube	Americas - 500	500:$1.5900 1000:$1.5900 2000:$1.4900 3000:$1.3900 5000:$1.3900
IPI045N10N3GXKSA1	Infineon Technologies AG	Power Field-Effect Transistor, 100A I(D), 100V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA RoHS: Compliant	5061	1000:$1.4000 500:$1.4700 100:$1.5300 25:$1.5900 1:$1.7200
IPI045N10N3 G	Infineon Technologies AG	RoHS: Not Compliant	90	1000:$1.4000 500:$1.4700 100:$1.5300 25:$1.5900 1:$1.7200
IPI045N10N3 G DISTI # 726-IPI045N10N3G	Infineon Technologies AG	MOSFET N-Ch 100V 100A I2PAK-3 OptiMOS 3 RoHS: Compliant	760	1:$3.0700 10:$2.6100 100:$2.2600 250:$2.1500 500:$1.9300
IPI045N10N3GXKSA1 DISTI # 726-IPI045N10N3GXKSA	Infineon Technologies AG	MOSFET N-Ch 100V 100A I2PAK-3 OptiMOS 3 RoHS: Compliant	2000	1:$3.0700 10:$2.6100 100:$2.2600 250:$2.1500 500:$1.9300 1000:$1.6200

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