FQU1N60CTU

Mfr. #:: FQU1N60CTU
制造商:: ON Semiconductor
描述:: MOSFET N-CH 600V 1A IPAK
生命周期:: 制造商新产品。
数据表:: FQU1N60CTU 数据表
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产品属性
属性值

制造商: 仙童

产品分类: FET - 单

打包: 管子

部分别名: FQU1N60CTU_NL

单位重量: 0.012102 oz

安装方式: 通孔

包装盒: IPAK-3

技术: 硅

通道数: 1 Channel

配置: 单身的

晶体管型: 1 N-Channel

钯功耗: 2.5 W

最高工作温度: + 150 C

最低工作温度: - 55 C

秋季时间: 27 ns

上升时间: 21 ns

VGS-栅极-源极-电压: 30 V

Id 连续漏极电流: 1 A

Vds-漏-源-击穿电压: 600 V

Rds-On-Drain-Source-Resistance: 11.5 Ohms

晶体管极性: N通道

典型关断延迟时间: 13 ns

典型开启延迟时间: 7 ns

正向跨导最小值: 0.75 S

通道模式: 增强

Tags: FQU1N60C, FQU1N6, FQU1N, FQU1, FQU

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FQU1N60CTU 描述

***Components: In a Pack of 5, N-Channel MOSFET, 1 A, 600 V, 3-Pin IPAK ON Semiconductor FQU1N60CTU

***Semiconductor: Power MOSFET, N-Channel, QFET®, 600 V, 1 A, 11.5 Ω, IPAK

***ure Electronics: N-Channel 600 V 11.5 Ohm Through Hole Mosfet -TO-251AA

***p One Stop Global: Trans MOSFET N-CH 600V 1A 3-Pin(3+Tab) IPAK Tube

***ser: MOSFETs 600V N-Channel Adv Q-FET C-Series

***ark: Qfc 600V 11.5Ohm Ipak Rohs Compliant: Yes

***i-Key: MOSFET N-CH 600V 1A IPAK

***inecomponents.com: N-CH/600V/1A/QFET C-Series

***rchild Semiconductor: This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

***ment14 APAC: Prices include import duty and tax. MOSFET, N-CH, 600V, 1A, TO-251AA-3; Transistor Polarity:N Channel; Continuous Drain Current Id:1A; Drain Source Voltage Vds:600V; On Resistance Rds(on):2.8ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:28W; Transistor Case Style:TO-251AA; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:Lead (27-Jun-2018)

***nell: MOSFET, CANALE N, 600V, 1A, TO-251AA-3; Polarità Transistor:Canale N; Corrente Continua di Drain Id:1A; Tensione Drain Source Vds:600V; Resistenza di Attivazione Rds(on):2.8ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:4V; Dissipazione di Potenza Pd:28W; Modello Case Transistor:TO-251AA; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):Lead (27-Jun-2018)

Market price

型号	制造商	描述	库存	价格
FQU1N60CTU DISTI # V99:2348_06359653	ON Semiconductor	N-CH/600V/1A/QFET C-SERIES	4818	1000:$0.2773 500:$0.2950 100:$0.3278 10:$0.4646 1:$0.5338
FQU1N60CTU DISTI # FQU1N60CTUFS-ND	ON Semiconductor	MOSFET N-CH 600V 1A IPAK RoHS: Compliant Min Qty: 1 Container: Tube	2202In Stock	1000:$0.3279 500:$0.4099 100:$0.5533 10:$0.7170 1:$0.8200
FQU1N60CTU DISTI # 25845371	ON Semiconductor	N-CH/600V/1A/QFET C-SERIES	4818	1000:$0.2773 500:$0.2950 100:$0.3278 28:$0.4646
FQU1N60CTU DISTI # FQU1N60CTU	ON Semiconductor	Trans MOSFET N-CH 600V 1A 3-Pin(3+Tab) IPAK Rail - Rail/Tube (Alt: FQU1N60CTU) RoHS: Compliant Min Qty: 5040 Container: Tube	Americas - 0	5040:$0.2109 10080:$0.2099 20160:$0.2069 30240:$0.2049 50400:$0.1999
FQU1N60CTU DISTI # FQU1N60CTU	ON Semiconductor	Trans MOSFET N-CH 600V 1A 3-Pin(3+Tab) IPAK Rail (Alt: FQU1N60CTU) RoHS: Compliant Min Qty: 1	Europe - 0	1:€0.3519 10:€0.3129 25:€0.2809 50:€0.2559 100:€0.2339 500:€0.2159 1000:€0.2009
FQU1N60CTU DISTI # 31Y1566	ON Semiconductor	MOSFET, N-CH, 600V, 1A, TO-251AA-3,Transistor Polarity:N Channel,Continuous Drain Current Id:1A,Drain Source Voltage Vds:600V,On Resistance Rds(on):2.8ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,No. of Pins:3Pins, RoHS Compliant: Yes	2561	1:$0.7530 10:$0.6250 100:$0.4110 500:$0.3720 1000:$0.3330 2500:$0.2840 10000:$0.2740
FQU1N60CTU DISTI # 512-FQU1N60CTU	ON Semiconductor	MOSFET 600V N-Channel Adv Q-FET C-Series RoHS: Compliant	1495	1:$0.7000 10:$0.5780 100:$0.3730 1000:$0.2990 2500:$0.2520 10000:$0.2430 25000:$0.2330
FQU1N60CTU	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 1A I(D), 600V, 3.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA RoHS: Compliant	454886	1000:$0.3800 500:$0.4000 100:$0.4200 25:$0.4400 1:$0.4700
FQU1N60CTU DISTI # 6715345	ON Semiconductor	MOSFET N-CHANNEL 600V 1A IPAK, PK	655	5:£0.4820 25:£0.3320 100:£0.2120 250:£0.1960 500:£0.1900
FQU1N60CTU	Fairchild Semiconductor Corporation	RoHS: Compliant	Europe - 4540
FQU1N60CTU DISTI # 2453915	ON Semiconductor	MOSFET, N-CH, 600V, 1A, TO-251AA-3 RoHS: Compliant	2621	1:$1.1100 10:$0.9150 100:$0.5910 1000:$0.4740 2500:$0.3990 10000:$0.3850 25000:$0.3690 50000:$0.3650
FQU1N60CTU DISTI # 2453915	ON Semiconductor	MOSFET, N-CH, 600V, 1A, TO-251AA-3 RoHS: Compliant	2561	5:£0.4980 25:£0.4600 100:£0.2850 250:£0.2540 500:£0.2230

图片	型号	描述
	Mfr.#: FQU1N60CTU OMO.#: OMO-FQU1N60CTU	MOSFET 600V N-Channel Adv Q-FET C-Series
	Mfr.#: FQU1N50 OMO.#: OMO-FQU1N50-1190	全新原装
	Mfr.#: FQU1N50BTF OMO.#: OMO-FQU1N50BTF-1190	全新原装
	Mfr.#: FQU1N50BTU OMO.#: OMO-FQU1N50BTU-1190	全新原装
	Mfr.#: FQU1N50TUR OMO.#: OMO-FQU1N50TUR-1190	全新原装
	Mfr.#: FQU1N60B OMO.#: OMO-FQU1N60B-1190	全新原装
	Mfr.#: FQU1N60TU OMO.#: OMO-FQU1N60TU-ON-SEMICONDUCTOR	MOSFET N-CH 600V 1A IPAK
	Mfr.#: FQU1N60U OMO.#: OMO-FQU1N60U-1190	全新原装
	Mfr.#: FQU1N80 OMO.#: OMO-FQU1N80-1190	全新原装
	Mfr.#: FQU1N80TU OMO.#: OMO-FQU1N80TU-ON-SEMICONDUCTOR	MOSFET N-CH 800V 1A IPAK

FQU1N60CTU

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes