SI5515CDC-T1-E3

Mfr. #:: SI5515CDC-T1-E3
制造商:: Vishay
描述:: MOSFET N/P-CH 20V 4A 1206-8
生命周期:: 制造商新产品。
数据表:: SI5515CDC-T1-E3 数据表
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更多信息:: SI5515CDC-T1-E3 更多信息

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Tags: SI5515CDC-T, SI5515CDC, SI5515C, SI5515, SI551, SI55, SI5

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI5515CDC-T1-E3 描述

***ure Electronics: Dual N/P-Channel 20 V 2.1/1.3 W 11.3/11 nC Silicon SMT Mosfet - 1206-8 ChipFET

***ark: Transistor; Transistor Type:MOSFET; Transistor Polarity:Dual N/P Channel; Rds(on) Test Voltage, Vgs:8V; Package/Case:8-1206; Termination Type:SMD; Operating Temperature Range:-55°C to +150°C ;RoHS Compliant: Yes

***ment14 APAC: DUAL N/P CHANNEL MOSFET, 20V, 1206; Tran; DUAL N/P CHANNEL MOSFET, 20V, 1206; Transistor Polarity:N and P Channel; Continuous Drain Current Id, N Channel:4A; Continuous Drain Current Id, P Channel:-3.1A; Drain Source Voltage Vds, N Channel:20V

***nell: MOSFET, NP CH, 20V, 1206; Transistor Polarity:N and P Channel; Continuous Drain Current Id:4A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.03ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:800mV; Power Dissipation Pd:3.1W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:1206; No. of Pins:8

SI5515CDC-T1-E3 更多信息

Integrated MOSFET Solutions: Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance.

N & P Channel Pair Thermally Enhanced MOSFETs: Vishay N and P Channel Pair Thermally Enhanced MOSFETs combine the N-channel and P-channel MOSFET pairs into one single package. These N and P Channel MOSFETs are designed to minimize the ON-state Resistance (RDS(on)) while maintaining superior switching performance. In addition, combining both the N-channel and P-channel MOSFETs into a single IC saves PCB space and simplifies application design.

Market price

型号	制造商	描述	库存	价格
SI5515CDC-T1-E3 DISTI # V72:2272_09216222	Vishay Intertechnologies	Trans MOSFET P-CH 20V 4A/3.1A 8-Pin Chip FET T/R RoHS: Compliant	2960	1000:$0.3504 500:$0.3976 250:$0.4851 100:$0.5049 25:$0.5964 10:$0.7288 1:$0.9011
SI5515CDC-T1-E3 DISTI # V36:1790_09216222	Vishay Intertechnologies	Trans MOSFET P-CH 20V 4A/3.1A 8-Pin Chip FET T/R RoHS: Compliant	0	3000:$0.2863
SI5515CDC-T1-E3 DISTI # SI5515CDC-T1-E3TR-ND	Vishay Siliconix	MOSFET N/P-CH 20V 4A 1206-8 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Temporarily Out of Stock	30000:$0.2793 15000:$0.2867 6000:$0.2977 3000:$0.3197
SI5515CDC-T1-E3 DISTI # SI5515CDC-T1-E3CT-ND	Vishay Siliconix	MOSFET N/P-CH 20V 4A 1206-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Temporarily Out of Stock	1000:$0.3634 500:$0.4542 100:$0.5746 10:$0.7490 1:$0.8500
SI5515CDC-T1-E3 DISTI # SI5515CDC-T1-E3DKR-ND	Vishay Siliconix	MOSFET N/P-CH 20V 4A 1206-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Temporarily Out of Stock	1000:$0.3634 500:$0.4542 100:$0.5746 10:$0.7490 1:$0.8500
SI5515CDC-T1-E3 DISTI # 32378710	Vishay Intertechnologies	Trans MOSFET P-CH 20V 4A/3.1A 8-Pin Chip FET T/R RoHS: Compliant	2960	24:$0.9011
SI5515CDC-T1-E3 DISTI # SI5515CDC-T1-E3	Vishay Intertechnologies	Trans MOSFET P-CH 20V 4A/3.1A 8-Pin Chip FET T/R - Tape and Reel (Alt: SI5515CDC-T1-E3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0
SI5515CDC-T1-E3 DISTI # SI5515CDC-T1-E3	Vishay Intertechnologies	Trans MOSFET P-CH 20V 4A/3.1A 8-Pin Chip FET T/R (Alt: SI5515CDC-T1-E3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	30000:€0.2599 18000:€0.2789 12000:€0.3019 6000:€0.3509 3000:€0.5149
SI5515CDC-T1-E3 DISTI # SI5515CDC-T1-E3	Vishay Intertechnologies	Trans MOSFET P-CH 20V 4A/3.1A 8-Pin Chip FET T/R (Alt: SI5515CDC-T1-E3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Asia - 0
SI5515CDC-T1-E3 DISTI # 16P3787	Vishay Intertechnologies	DUAL N/P CHANNEL MOSFET, 20V, 1206,Transistor Polarity:N and P Channel,Continuous Drain Current Id:4A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.03ohm,Rds(on) Test Voltage Vgs:8V,Threshold Voltage Vgs:800mV RoHS Compliant: Yes	0	2500:$0.3440 1000:$0.4340 500:$0.4940 250:$0.5760 100:$0.6480 50:$0.7320 25:$0.8040 1:$0.8960
SI5515CDC-T1-E3 DISTI # 781-SI5515CDC-E3	Vishay Intertechnologies	MOSFET -20V Vds 8V Vgs 1206-8 ChipFET RoHS: Compliant	21484	1:$0.8300 10:$0.6690 100:$0.5080 500:$0.4200 1000:$0.3360 3000:$0.3040 6000:$0.2830 9000:$0.2730 24000:$0.2620
SI5515CDC-T1-E3	Vishay Intertechnologies	MOSFET -20V Vds 8V Vgs 1206-8 ChipFET RoHS: Compliant	Americas -

图片	型号	描述
	Mfr.#: SI5515CDC-T1-E3 OMO.#: OMO-SI5515CDC-T1-E3	MOSFET -20V Vds 8V Vgs 1206-8 ChipFET
	Mfr.#: SI5515CDC-T1-GE3-CUT TAPE OMO.#: OMO-SI5515CDC-T1-GE3-CUT-TAPE-1190	全新原装
	Mfr.#: SI5515CD OMO.#: OMO-SI5515CD-1190	全新原装
	Mfr.#: SI5515CDC OMO.#: OMO-SI5515CDC-1190	全新原装
	Mfr.#: SI5515CDC-E3 OMO.#: OMO-SI5515CDC-E3-1190	全新原装
	Mfr.#: SI5515CDC-T1-E3 OMO.#: OMO-SI5515CDC-T1-E3-VISHAY	MOSFET N/P-CH 20V 4A 1206-8
	Mfr.#: SI5515CDC-T1-GE3 OMO.#: OMO-SI5515CDC-T1-GE3-VISHAY	MOSFET N/P-CH 20V 4A 1206-8
	Mfr.#: SI5515CDCD-T1-GE3 OMO.#: OMO-SI5515CDCD-T1-GE3-1190	全新原装
	Mfr.#: SI5515CDCT1GE3 OMO.#: OMO-SI5515CDCT1GE3-1190	全新原装

SI5515CDC-T1-E3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes