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IXFR50N50

IXFR50N50
Mfr. #:
IXFR50N50
制造商:
Littelfuse
描述:
MOSFET 43 Amps 500V 0.1 Rds
生命周期:
制造商新产品。
数据表:
IXFR50N50 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXFR50N50 Datasheet
ECAD Model:
产品属性
属性值
制造商：
IXYS
产品分类：
MOSFET
RoHS：
Y
技术：
硅
安装方式：
通孔
包装/案例：
TO-247-3
通道数：
1 Channel
晶体管极性：
N通道
Vds - 漏源击穿电压：
500 V
Id - 连续漏极电流：
43 A
Rds On - 漏源电阻：
100 mOhms
Vgs - 栅源电压：
20 V
最低工作温度：
- 40 C
最高工作温度：
+ 150 C
Pd - 功耗：
400 W
配置：
单身的
频道模式：
增强
商品名：
超场效应晶体管
打包：
管子
高度：
21.34 mm
长度：
16.13 mm
系列：
IXFR50N50
晶体管类型：
1 N-Channel
宽度：
5.21 mm
品牌：
IXYS
秋季时间：
45 ns
产品类别：
MOSFET
上升时间：
60 ns
出厂包装数量：
30
子类别：
MOSFET
典型关断延迟时间：
120 ns
典型的开启延迟时间：
45 ns
单位重量：
0.056438 oz
Tags
IXFR5, IXFR, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 500V 43A 3-Pin (3+Tab) ISOPLUS 247
***ponent Stockers USA
43 A 500 V 0.1 ohm N-CHANNEL Si POWER MOSFET
***i-Key
MOSFET N-CH 500V 43A ISOPLUS247
***icroelectronics
N-channel 500 V, 0.08 Ohm ty., 45 A MDmesh Power MOSFET in a TO-247 package
***eco
Transistor MOSFET N-Channel 500 Volt 45A 3-Pin(3+Tab) TO-247
***ure Electronics
N-Channel 500 V 0.1 O 87 nC Flange Mount MDmesh Power Mosfet - TO-247
***r Electronics
Power Field-Effect Transistor, 45A I(D), 500V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
***nell
MOSFET, N CH, 550V, 45A, TO-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 45A; Drain Source Voltage Vds: 550V; On Resistance Rds(on): 0.1ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power
***p One Stop Global
Trans MOSFET N-CH Si 500V 50A 3-Pin(3+Tab) TO-3PL
***el Electronic
Power Management Specialized - PMIC IEEE 802.3af Class 1/Class 2 PD
***i-Key
MOSFET N-CH 500V 50A TO-3P(L)
***or
MOSFET N-CH 500V 50A TO3P
***emi
N-Channel Power MOSFET, UniFETTM, 500 V, 44 A, 120 mΩ, TO-247
***r Electronics
Power Field-Effect Transistor, 44A I(D), 500V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
***el Electronic
Coaxial Connectors (RF) Jack, Male Pin Snap-On 1 (Unlimited) 50 Ω 10 Weeks Bulk SSMB Through Hole, Right Angle Brass RF Connectors / Coaxial Connectors SSMB M RA NA
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:500V; Continuous Drain Current, Id:44A; On Resistance, Rds(on):0.12ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-247 ;RoHS Compliant: Yes
***rchild Semiconductor
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
***ment14 APAC
MOSFET, N, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:44A; Drain Source Voltage Vds:500V; On Resistance Rds(on):110mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.15V; Power Dissipation Pd:750W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:SOT-249; Current Id Max:44A; Current Temperature:25°C; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247; Power Dissipation Pd:750W; Power Dissipation Pd:750W; Power Dissipation Ptot Max:750W; Pulse Current Idm:176A; Termination Type:Through Hole; Voltage Vds Typ:500V; Voltage Vgs Max:3.15V; Voltage Vgs Rds on Measurement:10V
***emi
N-Channel Power MOSFET, UniFETTM, 500V, 48A, 105mΩ, TO-3P
*** Source Electronics
Trans MOSFET N-CH 500V 48A 3-Pin(3+Tab) TO-3P Tube / MOSFET N-CH 500V 48A TO-3P
***nell
MOSFET, N-CH, 500V, 48A, TO-3PN-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 48A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 0.089ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Po
***rchild Semiconductor
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
***ure Electronics
Single N-Channel 500 V 0.105 Ohm 137 nC 625 W Flange Mount Mosfet - TO-247-3
***emi
N-Channel UniFETTM MOSFET 500V, 48A, 105mΩ
***rchild Semiconductor
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
***et
Transistor MOSFET N-Channel 600V 53.5A 3-Pin TO-247 Tube
***ure Electronics
N-Channel 600 V 53.5 A 70 mO 100 nC CoolMOS P6 Power Transistor - TO-247
***ark
MOSFET, N-CH, 600V, 53.5A, 150DEG C/391W; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:53.5A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
***ineon SCT
Infineons CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in, PG-TO247-3, RoHS
***ineon
Infineons CoolMOS P6 product family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use. | Summary of Features: Reduced gate charge (Q g); Higher V th; Good body diode ruggedness; Optimized integrated R g; Improved dv/dt from 50V/ns; CoolMOS quality with over 12 years manufacturing experience in superjunction technology | Benefits: Improved effciency especially in light load condition; Better efficiency in soft switching applications due to earlier turn-off; Suitable for hard- & soft-switching topologies; Optimized balance of efficiency and ease of use and good controllability of switching behavior; High robustness and better efficiency; Outstanding quality & reliability | Target Applications: PFC stages for server, telecom rectifier, PC silverbox, gaming consoles; PWM stages (TTF, LLC) for server, telecom rectifier, PC silverbox, gaming consoles
型号 制造商 描述 库存 价格
IXFR50N50
DISTI # IXFR50N50-ND		IXYS CorporationMOSFET N-CH 500V 43A ISOPLUS247
RoHS: Compliant
Min Qty: 30
Container: Tube		Temporarily Out of Stock
  • 30:$19.3460
IXFR50N50
DISTI # 747-IXFR50N50		IXYS CorporationMOSFET 43 Amps 500V 0.1 Rds
RoHS: Compliant		0
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    可用性
    库存:
    Available
    订购:
    4000
    输入数量:
    IXFR50N50的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
    参考价格（美元）
    数量
    单价
    小计金额
    1
    US$22.76
    US$22.76
    5
    US$21.62
    US$108.10
    10
    US$21.06
    US$210.60
    25
    US$19.35
    US$483.75
    50
    US$18.52
    US$926.00
    100
    US$17.98
    US$1 798.00
    250
    US$16.50
    US$4 125.00
    500
    US$15.71
    US$7 855.00
    由于2021年半导体供不应求，低于2021年之前的正常价格，请发询价确认。
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