IPB096N03L G

Mfr. #:: IPB096N03L G
制造商:: INFINEON
描述:: IGBT Transistors MOSFET N-Ch 30V 35A D2PAK-2 OptiMOS 3
生命周期:: 制造商新产品。
数据表:: IPB096N03L G 数据表
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产品属性
属性值

制造商: 英飞凌

产品分类: FET - 单

系列: OptiMOS 3

打包: 卷轴

部分别名: IPB096N03LGATMA1 SP000254711

单位重量: 0.139332 oz

安装方式: 贴片/贴片

商品名: 优化MOS

包装盒: TO-252-3

技术: 硅

通道数: 1 Channel

配置: 单身的

晶体管型: 1 N-Channel

钯功耗: 42 W

最高工作温度: + 175 C

最低工作温度: - 55 C

秋季时间: 2.6 ns

上升时间: 3.2 ns

VGS-栅极-源极-电压: 20 V

Id 连续漏极电流: 35 A

Vds-漏-源-击穿电压: 30 V

Rds-On-Drain-Source-Resistance: 9.6 mOhms

晶体管极性: N通道

典型关断延迟时间: 16 ns

典型开启延迟时间: 4 ns

通道模式: 增强

Tags: IPB096N03LG, IPB096, IPB09, IPB0, IPB

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPB096N03L G 描述

***ark: MOSFET, N CH, 35A, 30V, PG-TO263-3; Transistor Polarity:N Channel; Continuous Dr

***et: Trans MOSFET N-CH 30V 35A 3-Pin(2+Tab) TO-263

***ronik: N-CH 30V 35A 10mOhm TO263-3 RoHSconf

***nell: MOSFET, N CH, 35A, 30V, PG-TO263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 35A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.008ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 42W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Current Id Max: 35A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C; Transistor Type: Power MOSFET; Voltage Vgs Max: 20V

***emi: N-Channel PowerTrench® MOSFET, Logic Level, 30V, 60A, 9mΩ

***Yang: Trans MOSFET N-CH 30V 60A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel

***ure Electronics: N-Channel 30 V 9 mohm Surface Mount Logic Level PowerTrench Mosfet TO-263AB

*** Stop Electro: Power Field-Effect Transistor, 60A I(D), 30V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***el Electronic: Chip Resistor - Surface Mount 680Ohm 0402 (1005 Metric) ±1% ±100ppm/°C Thick Film Tape & Reel (TR) 2 1 (Unlimited) ERJ RES SMD 680 OHM 1% 1/10W 0402

***nell: MOSFET, N-CH, 30V, 60A, TO-263AB-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 60A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0068ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.9V; Power Dissipation Pd: 60W; Transistor Case Style: TO-263AB; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: PowerTrench Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)

***rchild Semiconductor: This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.

***i-Key: MOSFET N-CH 30V 71A D2PAK

***Yang: TRANS MOSFET N-CH 30V 71A 3PIN TO-263 - Bulk

***ser: MOSFETs 30V N-Ch PowerTrench MOSFET

***inecomponents.com: 30V,48A, 14 OHM NCH LOGIC LEVEL POWER TRENCH MOSFET

***et: TRANS MOSFET N-CH 30V 48A 3PIN TO-263AB

***ser: MOSFETs 30V N-Ch PowerTrench MOSFET

***el Electronic: Chip Resistor - Surface Mount 100Ohm 0603 (1608 Metric) ±1% ±100ppm/°C Thick Film Tape & Reel (TR) 2 1 (Unlimited) ERJ RES SMD 100 OHM 1% 1/10W 0603

***p One Stop Global: Trans MOSFET N-CH 30V 48A 3-Pin(2+Tab) D2PAK T/R

***el Electronic: Chip Resistor - Surface Mount 60.4Ohm 0402 (1005 Metric) ±1% ±100ppm/°C Thick Film Tape & Reel (TR) 2 1 (Unlimited) ERJ RES SMD 60.4 OHM 1% 1/10W 0402

***nell: TRANSISTOR, MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Voltage, Vds Typ:30V; Current, Id Cont:48A; On State Resistance:0.013ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:1.9V; Case Style:TO-220; Termination Type:SMD; Operating Temperature Range:-65°C to +175°C; Transistor Case Style:TO-220

***rchild Semiconductor: This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.

***ical: Trans MOSFET N-CH 30V 25A 3-Pin(2+Tab) TO-263AB

***i-Key: MOSFET N-CH 30V 25A D2PAK

***S: French Electronic Distributor since 1988

***-Wing Technology: N-CHANNEL POWER MOSFET

***ser: Not available to order .

***ponent Stockers USA: 20 A 30 V 0.0217 ohm N-CHANNEL Si POWER MOSFET TO-263AB

***i-Key: MOSFET N-CH 30V 20A TO263-3

*** Electronics: OPTLMOS N-CHANNEL POWER MOSFET

***el Nordic: Contact for details

***et: N-KANAL POWER MOS

Market price

型号	制造商	描述	库存	价格
IPB096N03LGATMA1 DISTI # IPB096N03LGATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 30V 35A TO-263-3 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	Limited Supply - Call
IPB096N03LGATMA1 DISTI # IPB096N03LGATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 30V 35A TO-263-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
IPB096N03LGATMA1 DISTI # IPB096N03LGATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 30V 35A TO-263-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
IPB096N03L G DISTI # 726-IPB096N03LG	Infineon Technologies AG	MOSFET N-Ch 30V 35A D2PAK-2 OptiMOS 3 RoHS: Compliant	0
IPB096N03LG	Infineon Technologies AG	Power Field-Effect Transistor, 35A I(D), 30V, 0.0141ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant	402	1000:$0.3200 500:$0.3400 100:$0.3600 25:$0.3700 1:$0.4000
IPB096N03LGATMA1	Infineon Technologies AG	Power Field-Effect Transistor, 35A I(D), 30V, 0.0141ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant	5000	1000:$0.4100 500:$0.4300 100:$0.4500 25:$0.4700 1:$0.5100

图片	型号	描述
	Mfr.#: IPB096N03L OMO.#: OMO-IPB096N03L-1190	全新原装
	Mfr.#: IPB096N03LG OMO.#: OMO-IPB096N03LG-1190	Power Field-Effect Transistor, 35A I(D), 30V, 0.0141ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
	Mfr.#: IPB096N03LGATMA1 OMO.#: OMO-IPB096N03LGATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 30V 35A TO-263-3
	Mfr.#: IPB096N03L G OMO.#: OMO-IPB096N03L-G-126	IGBT Transistors MOSFET N-Ch 30V 35A D2PAK-2 OptiMOS 3

IPB096N03L G

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes