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BSD235NH6327XT

BSD235NH6327XT
Mfr. #:
BSD235NH6327XT
制造商:
Infineon Technologies
描述:
MOSFET N-Ch 20V 950mA SOT-363-6
生命周期:
制造商新产品。
数据表:
BSD235NH6327XT 数据表
交货:
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ECAD Model:
更多信息:
BSD235NH6327XT 更多信息
产品属性
属性值
制造商：
英飞凌
产品分类：
MOSFET
RoHS：
Y
技术：
硅
安装方式：
贴片/贴片
包装/案例：
SOT-363-6
通道数：
2 Channel
晶体管极性：
N通道
Vds - 漏源击穿电压：
20 V
Id - 连续漏极电流：
950 mA
Rds On - 漏源电阻：
266 mOhms, 266 mOhms
Vgs th - 栅源阈值电压：
700 mV
Vgs - 栅源电压：
12 V
Qg - 门电荷：
320 pC, 320 pC
最低工作温度：
- 55 C
最高工作温度：
+ 150 C
Pd - 功耗：
500 mW (1/2 W)
配置：
双重的
频道模式：
增强
资质：
AEC-Q101
打包：
卷轴
高度：
0.9 mm
长度：
2 mm
系列：
BSD235
晶体管类型：
2 N-Channel
宽度：
1.25 mm
品牌：
英飞凌科技
正向跨导 - 最小值：
2 S, 2 S
秋季时间：
1.2 ns, 1.2 ns
产品类别：
MOSFET
上升时间：
3.6 ns, 3.6 ns
出厂包装数量：
3000
子类别：
MOSFET
典型关断延迟时间：
4.5 ns, 4.5 ns
典型的开启延迟时间：
3.8 ns, 3.8 ns
第 # 部分别名：
BSD235NH6327 BSD235NH6327XTSA1 SP000917652
单位重量：
0.000265 oz
Tags
BSD235NH, BSD235N, BSD23, BSD2, BSD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
MOSFET 2N-CH 20V 0.95A SOT363
*** Electronic Components
MOSFET N-Ch 20V 950mA SOT-363-6
***et Japan
Transistor MOSFET Array Dual N-CH 30V 1300mA 6-Pin SOT-363 T/R
***ure Electronics
DMN3190LDW: 30 V 190 mOhm Dual N-Channel Enhancement Mode Mosfet - SOT-363
*** Source Electronics
Trans MOSFET N-CH 30V 1A 6-Pin SOT-363 T/R / MOSFET 2N-CH 30V 1A SOT363
***ark
MOSFET, DUAL N-CH, 30V, 1A, SOT363; Channel Type:N Channel; Drain Source Voltage Vds N Channel:30V; Drain Source Voltage Vds P Channel:30V; Continuous Drain Current Id N Channel:1A; Continuous Drain Current Id P Channel:1A RoHS Compliant: Yes
***el Electronic
Transistors - FETs, MOSFETs - Arrays 1 (Unlimited) Tape & Reel (TR) 6-TSSOP, SC-88, SOT-363 Surface Mount 2 N-Channel (Dual) Logic Level Gate -55°C~150°C TJ 190m Ω @ 1.3A, 10V 2.8V @ 250μA MOSFET 2N-CH 30V 1A SOT363
***nell
MOSFET, DUAL N-CH, 30V, 1A, SOT363; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 1A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.122ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.8V; Power Dissipation Pd: 320mW; Transistor Case Style: SOT-363; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
***et
Transistor MOSFET Array Dual N-CH 30V 1300mA 6-Pin SOT-363 T/R
***ure Electronics
Dual N-Channel 30 V 190 mOhm Enhancement Mode Mosfet - SOT-363
***(Formerly Allied Electronics)
MOSFET Dual N-Ch 30V 1A Enhanc. SOT363
***des Inc SCT
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET, 30V VDS, 20±V VGS
***ark
Mosfet, Dual, N-Ch, 30V, 1A Rohs Compliant: Yes
***p One Stop Global
Trans MOSFET N/P-CH 20V 1.066A/0.845A Automotive 6-Pin SOT-363 T/R
***ure Electronics
Dual N & P-Channel 20 V 450 mOhm Enhancement Mode Mosfet
***ment14 APAC
MOSFET, N & P CH, 20V, SOT-363; Transistor Polarity:N and Complement; Continuous Drain Current Id:845mA; Source Voltage Vds:20V; On
***S.I.T. Europe - USA - Asia
Small Signal Field-Effect Transistor, 1.066A I(D), 20V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
***nell
MOSFET, N & P CH, 20V, SOT-363; Transistor Polarity: N and P Complement; Continuous Drain Current Id: 845mA; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.3ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 330mW; Transistor Case Style: SOT-363; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
***emi
Small Signal MOSFET 8V 775mA 300 mOhm Dual P-Channel SC−88/SC70−6/SOT−363 with ESD Protection
***-Wing Technology
Tape & Reel (TR) Surface Mount 2P-Channel (Dual) Dual Mosfet Array 4nC @ 4.5V 775mA 270mW 23ns
***et
Transistor MOSFET Array Dual P-CH 8V 0.775A 6-Pin SC-88 T/R
***ark
Transistor; Transistor Type:MOSFET; Transistor Polarity:Dual P Channel; Drain Source Voltage, Vds:-8V; Continuous Drain Current, Id:0.775A; On Resistance, Rds(on):300mohm; Rds(on) Test Voltage, Vgs:-4.5V ;RoHS Compliant: Yes
***emi
Small Signal MOSFET 8V 775mA 300 mOhm Dual P-Channel SC−88/SC70−6/SOT−363 with ESD Protection
***ser
MOSFETs- Power and Small Signal 8V Dual P-Channel No-Cancel/No-Return
***ponent Stockers USA
775 mA 8 V 2 CHANNEL P-CHANNEL Si SMALL SIGNAL MOSFET
***r Electronics
Small Signal Field-Effect Transistor, 0.775A I(D), 8V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
***i-Key
MOSFET 2P-CH 8V 0.775A SOT-363
***emi
Small Signal MOSFET 8V 775mA 300 mOhm Dual P-Channel SC−88/SC70−6/SOT−363 with ESD Protection
***ser
MOSFETs- Power and Small Signal 8V Dual P-Channel ESD Protection
***r Electronics
Small Signal Field-Effect Transistor, 0.775A I(D), 8V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
***i-Key
MOSFET 2P-CH 8V 0.775A SOT-363
Small Signal Power MOSFETs
Infineon Small Signal Power MOSFETs are available in 7 industry-standard package types ranging from the largest SOT-223 down to the smallest SOT-363 measuring 2.1mm x 2mm x 0.9mm. These are offered in single, dual and complementary configurations. They are available in N-Channel, P-Channel or Complementary (both P-Channel and N-Channel within the same package) versions to meet a variety of design requirements. Typical applications for these devices include battery protection, LED lighting, low voltage drives, and DC/DC converters. Each of these Small Signal Power MOSFETs are also qualified to Automotive AEC Q101.Learn More
型号 制造商 描述 库存 价格
BSD235NH6327XTSA1
DISTI # BSD235NH6327XTSA1CT-ND		Infineon Technologies AGMOSFET 2N-CH 20V 0.95A SOT363
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		270In Stock
  • 1000:$0.1341
  • 500:$0.1749
  • 100:$0.2496
  • 10:$0.3590
  • 1:$0.4500
BSD235NH6327XTSA1
DISTI # BSD235NH6327XTSA1DKR-ND		Infineon Technologies AGMOSFET 2N-CH 20V 0.95A SOT363
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		270In Stock
  • 1000:$0.1341
  • 500:$0.1749
  • 100:$0.2496
  • 10:$0.3590
  • 1:$0.4500
BSD235NH6327XTSA1
DISTI # BSD235NH6327XTSA1TR-ND		Infineon Technologies AGMOSFET 2N-CH 20V 0.95A SOT363
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		On Order
  • 3000:$0.1203
BSD235NH6327XTSA1
DISTI # SP000917652		Infineon Technologies AGTrans MOSFET N-CH 20V 0.95A 6-Pin SOT-363 T/R (Alt: SP000917652)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Europe - 15000
  • 3000:€0.1019
  • 6000:€0.0789
  • 12000:€0.0639
  • 18000:€0.0539
  • 30000:€0.0509
BSD235NH6327XTSA1
DISTI # BSD235NH6327XTSA1		Infineon Technologies AGTrans MOSFET N-CH 20V 0.95A 6-Pin SOT-363 T/R - Tape and Reel (Alt: BSD235NH6327XTSA1)
RoHS: Compliant
Min Qty: 9000
Container: Reel		Americas - 0
  • 9000:$0.0689
  • 15000:$0.0659
  • 24000:$0.0639
  • 45000:$0.0619
  • 90000:$0.0599
BSD235NH6327XTSA1
DISTI # 46AC0522		Infineon Technologies AGMOSFET, DUAL N CH, 20V, 0.95A, SOT-363-6,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:950mA,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.266ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage RoHS Compliant: Yes0
  • 1000:$0.1080
  • 500:$0.1200
  • 250:$0.1320
  • 100:$0.1440
  • 50:$0.1850
  • 25:$0.2250
  • 10:$0.2660
  • 1:$0.3500
BSD235NH6327XTSA1
DISTI # 726-BSD235NH6327XTS		Infineon Technologies AGMOSFET N-Ch 20V 950mA SOT-363-6
RoHS: Compliant		18443
  • 1:$0.3500
  • 10:$0.2660
  • 100:$0.1440
  • 1000:$0.1080
  • 3000:$0.0930
BSD235NH6327XT
DISTI # 726-BSD235NH6327XTSA		Infineon Technologies AGMOSFET N-Ch 20V 950mA SOT-363-6
RoHS: Compliant		8008
  • 1:$0.3500
  • 10:$0.2660
  • 100:$0.1440
  • 1000:$0.1080
  • 3000:$0.0930
BSD235N H6327
DISTI # 726-BSD235NH6327		Infineon Technologies AGMOSFET N-Ch 20V 950mA SOT-363-6
RoHS: Compliant		0
  • 1:$0.3700
  • 10:$0.2800
  • 100:$0.1600
  • 1000:$0.1200
  • 3000:$0.1000
BSD235NH6327XTSA1
DISTI # 8270115		Infineon Technologies AGINFINEON TRANS BSD235NH6327XT, RL9000
  • 6000:£0.0640
  • 3000:£0.0670
  • 1000:£0.0780
  • 250:£0.1060
BSD235NH6327XTSA1
DISTI # 2443477		Infineon Technologies AGMOSFET, DUAL N CH, 20V, 0.95A, SOT-363-6
RoHS: Compliant		0
  • 3000:$0.1590
  • 1000:$0.1910
  • 100:$0.2540
  • 10:$0.4440
  • 1:$0.5860
BSD235NH6327XTSA1
DISTI # 2443477		Infineon Technologies AGMOSFET, DUAL N CH, 20V, 0.95A, SOT-363-6
RoHS: Compliant		0
  • 100:£0.1450
  • 25:£0.2840
  • 5:£0.2950
BSD235NH6327XTSA1
DISTI # XSKDRABS0029373		Infineon Technologies AG 
RoHS: Compliant		12000
  • 12000:$0.0779
  • 9000:$0.0834
图片 型号 描述
10M02SCU169C8G

Mfr.#: 10M02SCU169C8G

OMO.#: OMO-10M02SCU169C8G

 FPGA - Field Programmable Gate Array
24AA02E48T-E/OT

Mfr.#: 24AA02E48T-E/OT

OMO.#: OMO-24AA02E48T-E-OT

 EEPROM 2K, SERIAL EE, EXT 256 X 8 1.8V
2N7002LT1G

Mfr.#: 2N7002LT1G

OMO.#: OMO-2N7002LT1G

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MBRS340T3G

Mfr.#: MBRS340T3G

OMO.#: OMO-MBRS340T3G

 Schottky Diodes & Rectifiers 3A 40V
RC0402FR-0710KL

Mfr.#: RC0402FR-0710KL

OMO.#: OMO-RC0402FR-0710KL

 Thick Film Resistors - SMD 10K OHM 1%
RC0402FR-074K7L

Mfr.#: RC0402FR-074K7L

OMO.#: OMO-RC0402FR-074K7L

 Thick Film Resistors - SMD 4.7K OHM 1%
RC0402FR-0722RL

Mfr.#: RC0402FR-0722RL

OMO.#: OMO-RC0402FR-0722RL

 Thick Film Resistors - SMD 22 OHM 1%
10M02SCU169C8G

Mfr.#: 10M02SCU169C8G

OMO.#: OMO-10M02SCU169C8G-INTEL

 IC FPGA 130 I/O 169UBGA MAX 10
2N7002LT1G

Mfr.#: 2N7002LT1G

OMO.#: OMO-2N7002LT1G-ON-SEMICONDUCTOR

 MOSFET N-CH 60V 0.115A SOT-23
24AA02E48T-E/OT

Mfr.#: 24AA02E48T-E/OT

OMO.#: OMO-24AA02E48T-E-OT-MICROCHIP-TECHNOLOGY

 IC EEPROM 2K I2C 400KHZ SOT23-5
可用性
库存:
12
订购:
1995
输入数量:
BSD235NH6327XT的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格（美元）
数量
单价
小计金额
1
US$0.34
US$0.34
10
US$0.27
US$2.66
100
US$0.14
US$14.40
1000
US$0.11
US$108.00
由于2021年半导体供不应求，低于2021年之前的正常价格，请发询价确认。
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