MR25H10CDCR

Mfr. #:: MR25H10CDCR
制造商:: Everspin Technologies
描述:: NVRAM 1Mb 3.3V 128Kx8 Serial MRAM
生命周期:: 制造商新产品。
数据表:: MR25H10CDCR 数据表
交货:: DHL FedEx Ups TNT EMS
支付:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:: MR25H10CDCR 更多信息

产品属性
属性值

制造商: Everspin 技术公司

产品分类: 记忆

系列: MR25H10

打包: 卷带 (TR) 替代包装

单位重量: 0.001319 oz

安装方式: 贴片/贴片

包装盒: DFN-8

工作温度: -40°C ~ 85°C (TA)

界面: SPI 串行

电压供应: 2.7 V ~ 3.6 V

供应商-设备-包: 8-DFN-EP, Large Flag (5x6)

内存大小: 1M (128K x 8)

内存型: MRAM（磁阻RAM）

速度: 40MHz

格式化内存: 内存

最高工作温度: + 85 C

最低工作温度: - 40 C

接口类型: SPI

组织: 128 k x 8

最大电源电压: 3.6 V

电源电压最小值: 2.7 V

Tags: MR25H10C, MR25H10, MR25H1, MR25H, MR25, MR2

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

MR25H10CDCR 评级和评论

P***n

In the work did not check yet.

2019-08-21

P***l

Delivered in 2 weeks to EU (Czech republic).

2019-06-14

E**s

Perfect

2019-07-27

MR25H10CDCR 描述

***ure Electronics: MR25H10 Series 128 k x 8 1 Mb 3 V Surface Mount Serial SPI MRAM - DFN-8

***i-Key: IC RAM 1M SPI 40MHZ 8DFN

MR25H10CDCR 更多信息

Serial SPI MRAMs: Everspin Technologies MR25H256 / MR25H10 /MRH25H128 / MR25H40 SPI Serial MRAM devices offer serial EEPROM and serial Flash compatible read/write timing with no write delays and unlimited read/write endurance. Unlike other serial memories, both reads and writes can occur randomly in memory with no delay between writes.

Magnetoresistive Random Access Memory (MRAM): Everspin Technologies Magnetoresistive Random Access Memory (MRAM) uses a 1 Transistor – 1 Magnetic Tunnel Junction (1T-1MTJ) architecture. These MRAM devices offer significantly long Data Retention (20+ years) and unlimited endurance. The data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification.

Everspin MRAM

Market price

型号	制造商	描述	库存	价格
MR25H10CDCR DISTI # MR25H10CDCR-ND	Everspin Technologies	IC RAM 1M SPI 40MHZ 8DFN RoHS: Compliant Min Qty: 4000 Container: Tape & Reel (TR)	Limited Supply - Call	4000:$5.2003
MR25H10CDCR DISTI # MR25H10CDCR	Everspin Technologies	NVRAM MRAM Serial-SPI 1M-Bit 3.3V 8-Pin DFN EP T/R (Alt: MR25H10CDCR) RoHS: Compliant Min Qty: 4000 Container: Tape and Reel	Europe - 0	4000:€5.6900 8000:€5.3900 16000:€5.1900 24000:€4.7900 40000:€4.4900
MR25H10CDC DISTI # 936-MR25H10CDC	Everspin Technologies	NVRAM 1Mb 3.3V 128Kx8 Serial MRAM RoHS: Compliant	1642	1:$7.1200 10:$6.5500 25:$6.4200 50:$6.3900 100:$5.7400 250:$5.5600 500:$5.2900 1000:$5.1000
MR25H10CDCR DISTI # 936-MR25H10CDCR	Everspin Technologies	NVRAM 1Mb 3.3V 128Kx8 Serial MRAM RoHS: Compliant	0	1:$7.3700 10:$6.7800 25:$6.6400 50:$6.6100 100:$5.9300 250:$5.7500 500:$5.4700 1000:$5.2800 4000:$5.0800

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