2N5883G

2N5883G
Mfr. #:
2N5883G
制造商:
ON Semiconductor
描述:
Bipolar Transistors - BJT 25A 60V 200W PNP
生命周期:
制造商新产品。
数据表:
2N5883G 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
2N5883G Datasheet2N5883G Datasheet (P4-P6)
ECAD Model:
产品属性
属性值
制造商:
安森美半导体
产品分类:
双极晶体管 - BJT
RoHS:
Y
安装方式:
通孔
包装/案例:
TO-204-2
晶体管极性:
PNP
配置:
单身的
集电极-发射极电压 VCEO 最大值:
60 V
集电极-基极电压 VCBO:
60 V
发射极基极电压 VEBO:
5 V
集电极-发射极饱和电压:
1 V
最大直流集电极电流:
25 A
增益带宽积 fT:
4 MHz
最低工作温度:
- 65 C
最高工作温度:
+ 150 C
系列:
2N5883
高度:
8.51 mm
长度:
39.37 mm
打包:
托盘
宽度:
26.67 mm
品牌:
安森美半导体
连续集电极电流:
25 A
DC 集电极/基极增益 hfe 最小值:
20
Pd - 功耗:
200 W
产品类别:
BJT - 双极晶体管
出厂包装数量:
100
子类别:
晶体管
单位重量:
0.432000 oz
Tags
2N5883, 2N588, 2N58, 2N5
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
25 A, 60 V PNP Bipolar Power Transistor
***ical
Trans GP BJT PNP 60V 25A 200000mW 3-Pin(2+Tab) TO-3 Tray
***r Electronics
Power Bipolar Transistor, 25A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-204AA, Metal, 2 Pin
***ment14 APAC
BIPOLAR TRANSISTOR, PNP -60V TO-204
***nell
TRANSISTOR, BIPOL, PNP, 60V, TO-204-2; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -60V; Transition Frequency ft: 4MHz; Power Dissipation Pd: 200W; DC Collector Current: -25A; DC Current Gain hFE: 4hFE; Transistor Case Style: TO-204; No. of Pins: 2Pins; Operating Temperature Max: 200°C; Product Range: 2NXXXX Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
***emi
25 A, 80 V PNP Bipolar Power Transistor
***ical
Trans GP BJT PNP 80V 25A 200000mW 3-Pin(2+Tab) TO-3 Tray
***r Electronics
Power Bipolar Transistor, 25A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-204AA, Metal, 2 Pin
***ure Electronics
2N Series 80 V 25 A PNP Complementary Silicon High-Power Transistor - TO-204AA
***nell
TRANSISTOR, PNP, TO-3; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: 80V; Transition Frequency ft: 4MHz; Power Dissipation Pd: 200W; DC Collector Cu; Available until stocks are exhausted Alternative available
***roFlash
Transistor, Bipolar; Si; PNP; Power; VCEO 60VDC; IC 15A; PD 115W; TO-204AA (TO-3); hFE 5
***emi
15 A, 60 V PNP Bipolar Power Transistor
***ical
Trans GP BJT PNP 60V 15A 115000mW 3-Pin(2+Tab) TO-3 Tray
***r Electronics
Power Bipolar Transistor, 15A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-204AA, Metal, 2 Pin
***ment14 APAC
BIPOLAR Transistor, PNP -60V TO-204; Tra; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:60V;
***nell
TRANSISTOR, BIPOL, PNP, 60V, TO-3-2; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -60V; Transition Frequency ft: 2.5MHz; Power Dissipation Pd: 115W; DC Collector Current: -15A; DC Current Gain hFE: 5hFE; Trans
***(Formerly Allied Electronics)
Transistor, Bipolar,Si,PNP,Power,VCEO 140VDC,IC 20A,PD 250W,TO-204AA (TO-3)
***emi
Bipolar Transistor, PNP, 140 V, 20 A
***ical
Trans GP BJT PNP 140V 20A 250000mW 3-Pin(2+Tab) TO-3 Tray
***r Electronics
Power Bipolar Transistor, 20A I(C), 140V V(BR)CEO, 1-Element, PNP, Silicon, TO-204AA, Metal, 2 Pin
***ure Electronics
MJ Series 140 V 20 A PNP Complementary Silicon Power Transistor - TO-204AA
***enic
140V 250W 20A 25@5A2V 2MHz 1V@5A500mA PNP -65¡Í~+200¡Í@(Tj) TO-3 Bipolar Transistors - BJT ROHS
***nell
TRANSISTOR, PNP, -140V, -20A, TO-3; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -140V; Transition Frequency ft: 2MHz; Power Dissipation Pd: 250W; DC Collector Current: -20A; DC Current Gain hFE: 150hFE; Trans
***th Star Micro
The MJ15003 and MJ15004 are PowerBase power transistors designed for high power audio disk head positioners and other linear applications.
型号 制造商 描述 库存 价格
2N5883G
DISTI # V36:1790_07311600
ON SemiconductorTrans GP BJT PNP 60V 25A 3-Pin(2+Tab) TO-3 Tray
RoHS: Compliant
300
  • 5000:$2.2030
  • 2000:$2.2460
  • 1000:$2.2970
  • 500:$2.3849
  • 200:$2.6890
  • 100:$2.7850
2N5883G
DISTI # 2N5883GOS-ND
ON SemiconductorTRANS PNP 60V 25A TO3
RoHS: Compliant
Min Qty: 1
Container: Tray
188In Stock
  • 1000:$2.3011
  • 500:$2.7285
  • 100:$3.2052
  • 10:$3.9120
  • 1:$4.3600
2N5883G
DISTI # 31328687
ON SemiconductorTrans GP BJT PNP 60V 25A 3-Pin(2+Tab) TO-3 Tray
RoHS: Compliant
300
  • 200:$2.5270
  • 100:$2.7750
2N5883G
DISTI # 2N5883G
ON SemiconductorTrans GP BJT PNP 60V 25A 3-Pin(2+Tab) TO-204 Tray - Trays (Alt: 2N5883G)
RoHS: Compliant
Min Qty: 1
Container: Tray
Americas - 0
  • 1:$3.8900
  • 10:$3.4900
  • 25:$3.4900
  • 50:$3.4900
  • 100:$2.7900
  • 500:$2.3900
  • 1000:$1.9900
2N5883G
DISTI # 26K5300
ON SemiconductorTrans GP BJT PNP 60V 25A 3-Pin(2+Tab) TO-204 Tray - Bulk (Alt: 26K5300)
RoHS: Compliant
Min Qty: 1
Container: Bulk
Americas - 0
  • 1:$4.1500
  • 10:$3.5300
  • 25:$3.3700
  • 50:$3.2200
  • 100:$3.0600
  • 250:$2.9000
  • 500:$2.6000
2N5883G
DISTI # 26K5300
ON SemiconductorBIPOLAR TRANSISTOR, PNP -60V TO-204,Transistor Polarity:PNP,Collector Emitter Voltage V(br)ceo:60V,Transition Frequency ft:4MHz,Power Dissipation Pd:200W,DC Collector Current:-25A,DC Current Gain hFE:4hFE,No. of Pins:2Pins RoHS Compliant: Yes56
  • 1:$4.3000
  • 10:$3.6800
  • 25:$3.5200
  • 50:$3.3700
  • 100:$3.2100
  • 250:$3.0500
  • 500:$2.7500
2N5883G.
DISTI # 28AC7846
ON SemiconductorBIP T03 PNP 25A 60V ROHS COMPLIANT: YES0
  • 1:$4.2300
  • 10:$3.6000
  • 25:$3.4400
  • 50:$3.2200
  • 100:$3.0600
  • 250:$2.9000
  • 500:$2.6000
2N5883GON Semiconductor 
RoHS: Not Compliant
40
  • 1000:$2.2900
  • 500:$2.4100
  • 100:$2.5100
  • 25:$2.6200
  • 1:$2.8200
2N5883G
DISTI # 863-2N5883G
ON SemiconductorBipolar Transistors - BJT 25A 60V 200W PNP
RoHS: Compliant
362
  • 1:$4.1500
  • 10:$3.5300
  • 100:$3.0600
  • 200:$2.9000
  • 500:$2.6000
  • 1000:$2.2000
  • 2000:$2.0900
2N5883
DISTI # 863-2N5883
ON SemiconductorBipolar Transistors - BJT 25A 60V 200W PNP
RoHS: Not compliant
0
    2N5883G
    DISTI # 2535597
    ON SemiconductorTRANSISTOR, BIPOL, PNP, 60V, TO-204-2
    RoHS: Compliant
    26
    • 1:$6.5700
    • 10:$5.5900
    • 100:$4.8500
    • 200:$4.5900
    • 500:$4.1200
    • 1000:$3.4900
    • 2000:$3.3100
    • 5000:$3.1900
    2N5883G.
    DISTI # 1126031
    ON SemiconductorBIPOLAR TRANSISTOR, PNP -60V TO-204
    RoHS: Compliant
    56
    • 1:$6.5700
    • 10:$5.5900
    • 100:$4.8500
    • 200:$4.5900
    • 500:$4.1200
    • 1000:$3.4900
    • 2000:$3.3100
    • 5000:$3.1900
    2N5883G
    DISTI # 2535597
    ON SemiconductorTRANSISTOR, BIPOL, PNP, 60V, TO-204-2
    RoHS: Compliant
    26
    • 1:£3.5100
    • 10:£2.6700
    • 100:£2.2000
    • 250:£2.0900
    • 500:£1.9700
    2N5883G
    DISTI # C1S541900338999
    ON SemiconductorTrans GP BJT PNP 60V 25A 3-Pin(2+Tab) TO-3 Tray
    RoHS: Compliant
    300
    • 200:$2.5270
    • 100:$2.7750
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    ALS70A753KE040

    Mfr.#: ALS70A753KE040

    OMO.#: OMO-ALS70A753KE040-KEMET

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    OMO.#: OMO-INA233AIDGSR-TEXAS-INSTRUMENTS

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    可用性
    库存:
    234
    订购:
    2217
    输入数量:
    2N5883G的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
    参考价格(美元)
    数量
    单价
    小计金额
    1
    US$6.48
    US$6.48
    10
    US$5.86
    US$58.60
    50
    US$5.59
    US$279.50
    100
    US$4.85
    US$485.00
    200
    US$4.63
    US$926.00
    500
    US$4.22
    US$2 110.00
    1000
    US$3.68
    US$3 680.00
    2500
    US$3.54
    US$8 850.00
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