OMO ElectronicOMO Electronic
Expand menu
0 购物车

AS4C512M8D3-12BCNTR

AS4C512M8D3-12BCNTR
Mfr. #:
AS4C512M8D3-12BCNTR
制造商:
Alliance Memory
描述:
DRAM 4G 1.5V 1600Mhz 512M x 8 DDR3
生命周期:
制造商新产品。
数据表:
AS4C512M8D3-12BCNTR 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
产品属性
属性值
制造商：
联盟记忆
产品分类：
动态随机存取存储器
RoHS：
Y
类型：
SDRAM - DDR3
数据总线宽度：
8 bit
组织：
512 M x 8
包装/案例：
FBGA-78
内存大小：
4 Gbit
最大时钟频率：
800 MHz
访问时间：
13.75 ns
电源电压 - 最大值：
1.575 V
电源电压 - 最小值：
1.283 V
电源电流 - 最大值：
82 mA
最低工作温度：
0 C
最高工作温度：
+ 95 C
系列：
AS4C512M8D3-12
打包：
卷轴
品牌：
联盟记忆
安装方式：
贴片/贴片
湿气敏感：
是的
产品类别：
动态随机存取存储器
出厂包装数量：
1000
子类别：
内存和数据存储
Tags
AS4C512M8D3-1, AS4C512M8, AS4C5, AS4C, AS4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
DRAM Chip DDR3 SDRAM 4G-Bit 512M x 8 1.5V 78-Pin F-BGA T/R
***i-Key
IC DRAM 4GBIT PARALLEL 78FBGA
***et
DRAM Chip DDR3 SDRAM 4G-Bit 512M x 8 1.5V 78-Pin TW-BGA
***ark
4G, 1.5V, Ddr3, 512Mx8, 1600Mt/s @ 11-11-11, 78 Ball Bga (9Mm X10.5Mm) Rohs
***I SCT
DDR SDRAM, 512Mx8, 1.5V, 8K, BGA-78,RoHS
***i-Key
IC DRAM 4GBIT PARALLEL 78TWBGA
***ark
4G, 1.35V, Ddr3L, 512Mx8, 1600Mt/s @ 11-11-11, 78 Ball Bga (9Mm X10.5Mm) Rohs, It
***et Europe
DRAM Chip DDR3L SDRAM 4Gbit 512M x 8 1.35V 78-Pin TWBGA Tray
***I SCT
DDR SDRAM, 512Mx8, 1.35V, 8K, BGA-78,RoHS
***i-Key
IC DRAM 4GBIT PARALLEL 78TWBGA
***ark
4G, 1.5V, DDR3, 512Mx8, 1333MT/s @ 9-9-9, 78 ball BGA (9mm x10.5mm) RoHS
***et
DRAM Chip DDR3 SDRAM 4G-Bit 512M x 8 1.5V 78-Pin TW-BGA
***or
IC DRAM 4GBIT PARALLEL 78TWBGA
***et
DRAM Chip DDR3L SDRAM 4G-Bit 512M x 8 1.35V 78-Pin F-BGA
***nell
DDR34G512MX8FBGA, TRAY, DRAM; DDR34G512MX8FBGA, TRAY, DRAM
***ron SCT
DRAM, DDR3 SDRAM, 4Gb, x8, 1.35V, 78-ball FBGA, RoHS
***ark
Dram, Ddr3L, 4Gbit, 0 To 95Deg C Rohs Compliant: Yes
*** Stop Electro
DDR3L DRAM, 512MX8, CMOS, PBGA78
***DA Technology Co., Ltd.
Product Description Demo for Development.
***S
French Electronic Distributor since 1988
***ment14 APAC
DRAM, 512M X 8BIT, 0 TO 95DEG C; DRAM Type:DDR3; DRAM Density:4Gbit; DRAM Memory Configuration:512M x 8bit; Clock Frequency:933MHz; Memory Case Style:TFBGA; No. of Pins:78Pins; Supply Voltage Nom:1.35V; Access Time:1.07ns
***et
DRAM Chip DDR3L SDRAM 4G-Bit 1G x 4 1.35V 78-Pin F-BGA
*** International
IC SDRAM 4GBIT 933MHZ 78FBGA
***NGYU ELECTRONICS
IC DRAM 4G PARALLEL 78FBGA
*** Electronic Components
DRAM DDR3 4G 1GX4 FBGA
***el Electronic
IC REG BUCK ADJ SMD
***ark
Dram, 1G X 4Bit, 0 To 95Deg C; Dram Type:ddr3; Dram Density:4Gbit; Dram Memory Configuration:1G X 4Bit; Clock Frequency:933Mhz; Memory Case Style:tfbga; No. Of Pins:78Pins; Supply Voltage Nom:1.35V; Access Time:1.07Ns Rohs Compliant: Yes
***enic
Parallel 4Gb (512M x 8) 1.14V ~ 1.26V Volatile FBGA-78 DDR SDRAM ROHS
***et Europe
DRAM Chip DDR4 SDRAM 4G-Bit 512M x 8 1.2V 78-Pin F-BGA
***ron SCT
DRAM, DDR4, 4Gb, x8, 78-ball FBGA, RoHS
***el Electronic
IC REG BUCK ADJUSTABLE 3A 8SOIC
*** Stop Electro
DDR4 DRAM, 512MX8, CMOS, PBGA78
***ponent Sense
4GBIT(X8) PB-FREE 16-BANK DDR4 1.2V 213
型号 制造商 描述 库存 价格
AS4C512M8D3-12BCNTR
DISTI # AS4C512M8D3-12BCNTR-ND		Alliance Memory IncIC DRAM 4G PARALLEL 78FBGA
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		Limited Supply - Call
    AS4C512M8D3-12BCNTR
    DISTI # 913-A4C512M8D312BCNT    		Alliance Memory IncDRAM 4G 1.5V 1600Mhz 512M x 8 DDR3
    RoHS: Compliant    		0
      图片 型号 描述
      AS4C512M8D3LB-10BINTR

      Mfr.#: AS4C512M8D3LB-10BINTR

      OMO.#: OMO-AS4C512M8D3LB-10BINTR

      		 DRAM 4G - B DIE - 10NS OPTION 512M x 8 1.35V 933MHz DDR3-1866bps/pin Industrial (-40 95 C) 78-ball FBGA
      AS4C512M8D3LB-12BINTR

      Mfr.#: AS4C512M8D3LB-12BINTR

      OMO.#: OMO-AS4C512M8D3LB-12BINTR

      		 DRAM 4G 1.35V 800MHz 512M x 8 DDR3 I-Temp
      AS4C512M8D3-12BAN

      Mfr.#: AS4C512M8D3-12BAN

      OMO.#: OMO-AS4C512M8D3-12BAN

      		 DRAM 4G 1.5V 1600Mhz 512M x 8 DDR3
      AS4C512M8D3L-12BIN

      Mfr.#: AS4C512M8D3L-12BIN

      OMO.#: OMO-AS4C512M8D3L-12BIN

      		 DRAM 4G 1.35V 1600Mhz 512M x 8 DDR3
      AS4C512M8D3L-12BCNTR

      Mfr.#: AS4C512M8D3L-12BCNTR

      OMO.#: OMO-AS4C512M8D3L-12BCNTR

      		 DRAM 4G 1.35V 1600Mhz 512M x 8 DDR3
      AS4C512M8D3L-12BAN

      Mfr.#: AS4C512M8D3L-12BAN

      OMO.#: OMO-AS4C512M8D3L-12BAN

      		 DRAM DDR3, 4GB. 1.35V 800MHz,512M x 8
      AS4C512M8D3-12BINTR

      Mfr.#: AS4C512M8D3-12BINTR

      OMO.#: OMO-AS4C512M8D3-12BINTR-ALLIANCE-MEMORY

      		 DRAM 4G 1.5V 1600Mhz 512M x 8 DDR3
      AS4C512M8D3-12BCNTR

      Mfr.#: AS4C512M8D3-12BCNTR

      OMO.#: OMO-AS4C512M8D3-12BCNTR-ALLIANCE-MEMORY

      		 DRAM 4G 1.5V 1600Mhz 512M x 8 DDR3
      AS4C512M8D3L-12BIN

      Mfr.#: AS4C512M8D3L-12BIN

      OMO.#: OMO-AS4C512M8D3L-12BIN-ALLIANCE-MEMORY

      		 DRAM 4G 1.35V 1600Mhz 512M x 8 DDR3
      AS4C512M8D3LA-12BANTR

      Mfr.#: AS4C512M8D3LA-12BANTR

      OMO.#: OMO-AS4C512M8D3LA-12BANTR-ALLIANCE-MEMORY

      		 IC DRAM 4G PARALLEL 78FBGA Automotive, AEC-Q100
      可用性
      库存:
      Available
      订购:
      3500
      输入数量:
      AS4C512M8D3-12BCNTR的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
      从...开始
      最新产品
      More Newest Products
      Top