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APT31M100L

APT31M100L
Mfr. #:
APT31M100L
制造商:
Microchip / Microsemi
描述:
MOSFET FG, MOSFET, 1000V, TO-264
生命周期:
制造商新产品。
数据表:
APT31M100L 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
APT31M100L DatasheetAPT31M100L Datasheet (P4)
ECAD Model:
产品属性
属性值
制造商：
微芯片
产品分类：
MOSFET
RoHS：
Y
技术：
硅
安装方式：
通孔
包装/案例：
TO-264-3
晶体管极性：
N通道
Vds - 漏源击穿电压：
1 kV
Id - 连续漏极电流：
32 A
Rds On - 漏源电阻：
380 mOhms
Vgs th - 栅源阈值电压：
4 V
Vgs - 栅源电压：
30 V
Qg - 门电荷：
260 nC
最低工作温度：
- 55 C
最高工作温度：
+ 150 C
Pd - 功耗：
1.04 kW
配置：
单身的
频道模式：
增强
打包：
管子
品牌：
微芯片/Microsemi
正向跨导 - 最小值：
34 S
秋季时间：
33 ns
产品类别：
MOSFET
上升时间：
35 ns
出厂包装数量：
1
子类别：
MOSFET
典型关断延迟时间：
130 ns
典型的开启延迟时间：
39 ns
单位重量：
0.352740 oz
Tags
APT31, APT3, APT
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We provide 90-360 days warranty.

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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 1KV 32A 3-Pin(3+Tab) TO-264
***rochip
MOSFET MOS8 1000 V 31 A TO-264
*** Stop Electro
Power Field-Effect Transistor, 32A I(D), 1000V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA
***emi
N-Channel Power MOSFET, QFET®, 500 V, 40 A, 110 mΩ, TO-264
***r Electronics
Power Field-Effect Transistor, 40A I(D), 500V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
***emi
N-Channel Power MOSFET, QFET®, FRFET®, 500 V, 40 A, 110 mΩ, TO-264
***r Electronics
Power Field-Effect Transistor, 40A I(D), 500V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
*** Electronics
Trans MOSFET N-CH 400V 50A 3-Pin(3+Tab) TO-264 Rail
***ser
MOSFETs 400V N-Channel QFET
***emi
N-Channel Power MOSFET, UniFETTM, FRFET®, 500 V, 100 A, 55 mΩ, TO-264
*** Source Electronics
Trans MOSFET N-CH 500V 100A 3-Pin(3+Tab) TO-264AA Tube / MOSFET N-CH 500V 100A TO-264
***nell
MOSFET, N-CH, 500V, 100A, TO-264AA-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 100A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 0.043ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V
***roFlash
Power Field-Effect Transistor, 100A I(D), 500V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA
***el Electronic
DC DC Converters 1 (Unlimited) 1 8-SMD Module, 5 Leads Surface Mount Isolated Module ITE (Commercial) ECONOLINE R1SE (E-Series) (1W) -40°C~85°C 0.50Lx0.42W x 0.26 H 12.8mmx10.7mmx6.7mm Module DC-DC 5VIN 1-OUT 5V 0.2A 1W 5-Pin SMD
***rchild Semiconductor
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. The body diode’s reverse recovery performance of UniFET FRFET® MOSFET has been enhanced by lifetime control. Its trr is less than 100nsec and the reverse dv/dt immunity is 15V/ns while normal planar MOSFETs have over 200nsec and 4.5V/nsec respectively. Therefore, it can remove additional component and improve system reliability in certain applications in which the performance of MOSFET’s body diode is significant. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
型号 制造商 描述 库存 价格
APT31M100L
DISTI # APT31M100L		Microchip Technology IncPower MOS 8 MOSFET N-Channel 1000V 32A 3-Pin TO-264 - Rail/Tube (Alt: APT31M100L)
RoHS: Compliant
Min Qty: 30
Container: Tube		Americas - 0
  • 300:$10.6900
  • 150:$10.8900
  • 90:$11.1900
  • 60:$11.5900
  • 30:$11.9900
APT31M100L
DISTI # 494-APT31M100L		Microchip Technology IncMOSFET Power MOSFET - MOS8
RoHS: Compliant		12
  • 1:$18.6400
  • 10:$16.9400
  • 25:$15.6700
  • 50:$14.8200
  • 100:$14.3000
  • 250:$13.0500
  • 500:$11.7500
图片 型号 描述
APT31M100L

Mfr.#: APT31M100L

OMO.#: OMO-APT31M100L

 MOSFET FG, MOSFET, 1000V, TO-264
APT31M100B2

Mfr.#: APT31M100B2

OMO.#: OMO-APT31M100B2

 MOSFET FG, MOSFET, 1000V, TO-247 T-MAX
APT31M100B2

Mfr.#: APT31M100B2

OMO.#: OMO-APT31M100B2-MICROSEMI

 Trans MOSFET N-CH 1KV 32A 3-Pin(3+Tab) T-MAX - Rail/Tube (Alt: APT31M100B2)
APT31M100L

Mfr.#: APT31M100L

OMO.#: OMO-APT31M100L-MICROSEMI

 Power MOS 8 MOSFET N-Channel 1000V 32A 3-Pin TO-264 - Rail/Tube (Alt: APT31M100L)
APT31N60SCS

Mfr.#: APT31N60SCS

OMO.#: OMO-APT31N60SCS-1190

 全新原装
APT31N90JC3

Mfr.#: APT31N90JC3

OMO.#: OMO-APT31N90JC3-1190

 全新原装
可用性
库存:
12
订购:
1995
输入数量:
APT31M100L的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格（美元）
数量
单价
小计金额
1
US$18.64
US$18.64
10
US$16.94
US$169.40
25
US$15.67
US$391.75
50
US$14.82
US$741.00
100
US$14.30
US$1 430.00
250
US$13.05
US$3 262.50
500
US$11.75
US$5 875.00
1000
US$10.90
US$10 900.00
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