SI2304BDS-T1-E3

Mfr. #:: SI2304BDS-T1-E3
制造商:: Vishay
描述:: MOSFET N-CH 30V 2.6A SOT23-3
生命周期:: 制造商新产品。
数据表:: SI2304BDS-T1-E3 数据表
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更多信息:: SI2304BDS-T1-E3 更多信息

产品属性
属性值

制造商: 威世硅

产品分类: FET - 单

系列: 沟槽FETR

打包: Digi-ReelR 替代包装

部分别名: SI2304BDS-E3

单位重量: 0.050717 oz

安装方式: 贴片/贴片

包装盒: TO-236-3, SC-59, SOT-23-3

技术: 硅

工作温度: -55°C ~ 150°C (TJ)

安装型: 表面贴装

通道数: 1 Channel

供应商-设备-包: SOT-23-3 (TO-236)

配置: 单身的

FET型: MOSFET N 沟道，金属氧化物

最大功率: 750mW

晶体管型: 1 N-Channel

漏源电压 Vdss: 30V

输入电容-Ciss-Vds: 225pF @ 15V

FET-Feature: 标准

Current-Continuous-Drain-Id-25°C: 2.6A (Ta)

Rds-On-Max-Id-Vgs: 70 mOhm @ 2.5A, 10V

Vgs-th-Max-Id: 3V @ 250μA

栅极电荷-Qg-Vgs: 4nC @ 5V

钯功耗: 750 mW

最高工作温度: + 150 C

最低工作温度: - 55 C

秋季时间: 12.5 ns

上升时间: 12.5 ns

VGS-栅极-源极-电压: 20 V

Id 连续漏极电流: 2.6 A

Vds-漏-源-击穿电压: 30 V

Rds-On-Drain-Source-Resistance: 70 mOhms

晶体管极性: N通道

典型关断延迟时间: 19 ns

典型开启延迟时间: 7.5 ns

通道模式: 增强

Tags: SI2304BDS-T1, SI2304BDS-T, SI2304B, SI2304, SI230, SI23, SI2

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI2304BDS-T1-E3 描述

***ure Electronics: Single N-Channel 30 V 0.07 Ohms Surface Mount Power Mosfet - SOT-23

***et Europe: Trans MOSFET N-CH 30V 2.6A 3-Pin SOT-23 T/R

***Components: MOSFET N-Channel 30V 2.6A SOT23

***ical: Trans MOSFET N-CH 30V 2.6A 3-Pin TO-236 T/R

***i-Key: MOSFET N-CH 30V 2.6A SOT23-3

***ronik: N-CHANNEL-FET 2,6A 30V SOT23

***nell: N CH MOSFET, FULL REEL

***ser: N-Channel MOSFETs 30V 3.2A 0.07Ohm

***: 30V, 70 MOHMS@10V

***ark: N Channel Mosfet, Full Reel; Transistor Polarity:n Channel; Continuous Drain Current Id:3.2A; Drain Source Voltage Vds:30V; On Resistance Rds(On):0.105Ohm; Rds(On) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1.5V; No. Of Pins:3Pins Rohs Compliant: No

SI2304BDS-T1-E3 更多信息

SI2 Series TrenchFET® Power MOSFETs: Vishay SI2 Series TrenchFET® Power MOSFETs are N-channel MOSFETs designed with 30V V(ds) and are 100% tested gate resistance(Rg). These MOSFETs have gate resistance tested for 1MHz frequency with 0.2Ω to 1.4Ω. These SI2 series MOSFETs operate from -55ºC to 150ºC junction and storage temperature. The SI2 series are ideal for DC/DC converter, Load switch, and power management.

Market price

型号	制造商	描述	库存	价格
SI2304BDS-T1-E3 DISTI # V72:2272_07432756	Vishay Intertechnologies	Trans MOSFET N-CH 30V 2.6A 3-Pin SOT-23 T/R RoHS: Compliant	2268	1000:$0.1238 500:$0.1650 250:$0.2166 100:$0.2406 25:$0.3155 10:$0.3505 1:$0.4465
SI2304BDS-T1-E3 DISTI # SI2304BDS-T1-E3CT-ND	Vishay Siliconix	MOSFET N-CH 30V 2.6A SOT23-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	1933In Stock	1000:$0.1246 500:$0.1661 100:$0.2423 10:$0.3530 1:$0.4500
SI2304BDS-T1-E3 DISTI # SI2304BDS-T1-E3DKR-ND	Vishay Siliconix	MOSFET N-CH 30V 2.6A SOT23-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	1933In Stock	1000:$0.1246 500:$0.1661 100:$0.2423 10:$0.3530 1:$0.4500
SI2304BDS-T1-E3 DISTI # SI2304BDS-T1-E3TR-ND	Vishay Siliconix	MOSFET N-CH 30V 2.6A SOT23-3 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	On Order	3000:$0.1109
SI2304BDS-T1-E3 DISTI # 27003783	Vishay Intertechnologies	Trans MOSFET N-CH 30V 2.6A 3-Pin SOT-23 T/R RoHS: Compliant	2268	1000:$0.1238 500:$0.1650 250:$0.2166 100:$0.2406 82:$0.3155
SI2304BDS-T1-E3 DISTI # SI2304BDS-T1-E3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 2.6A 3-Pin SOT-23 T/R - Tape and Reel (Alt: SI2304BDS-T1-E3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 3000	3000:$0.1079 6000:$0.1079 12000:$0.1079 18000:$0.1069 30000:$0.1069
SI2304BDS-T1-E3 DISTI # SI2304BDS-T1-E3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 2.6A 3-Pin SOT-23 T/R - Cut TR (SOS) (Alt: SI2304BDS-T1-E3) RoHS: Not Compliant Min Qty: 1 Container: Cut Tape	Americas - 0	1:$0.1159 30:$0.1139 75:$0.1139 150:$0.1129 375:$0.1129 750:$0.1129 1500:$0.1129
SI2304BDS-T1-E3 DISTI # SI2304BDS-T1-E3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 2.6A 3-Pin SOT-23 T/R (Alt: SI2304BDS-T1-E3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	3000:€0.2749 6000:€0.1869 12000:€0.1609 18000:€0.1489 30000:€0.1379
SI2304BDS-T1-E3 DISTI # 85W2138	Vishay Intertechnologies	Trans MOSFET N-CH 30V 2.6A 3-Pin SOT-23 T/R - Product that comes on tape, but is not reeled (Alt: 85W2138) RoHS: Not Compliant Min Qty: 1 Container: Ammo Pack	Americas - 0	1:$0.8040 25:$0.6070 50:$0.5290 100:$0.4510 250:$0.4120 500:$0.3710 1000:$0.2870
SI2304BDS-T1-E3 DISTI # 85W2138	Vishay Intertechnologies	Transistor Polarity:N Channel,Continuous Drain Current Id:3.2A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.055ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.5V,Power Dissipation Pd:1.08W,No. of Pins:3Pins , RoHS Compliant: Yes	1748	1:$0.8040 25:$0.6070 50:$0.5290 100:$0.4510 250:$0.4120 500:$0.3710 1000:$0.2870
SI2304BDS-T1-E3. DISTI # 30AC0136	Vishay Intertechnologies	N-CHANNEL 30-V (D-S) MOSFET , ROHS COMPLIANT: NO	3000	1:$0.2170 3000:$0.2170
SI2304BDS-T1-E3	Vishay Intertechnologies	Single N-Channel 30 V 0.07 Ohms Surface Mount Power Mosfet - SOT-23 RoHS: Compliant	45000Reel	3000:$0.1140 9000:$0.1110
SI2304BDS-T1-E3 DISTI # 781-SI2304BDS-T1-E3	Vishay Intertechnologies	MOSFET 30V 3.2A 0.07Ohm RoHS: Compliant	4267	1:$0.6700 10:$0.5060 100:$0.3760 500:$0.3090 1000:$0.2390 3000:$0.2170
SI2304BDS-T1-E3	Vishay Siliconix		100	14:$0.3750 41:$0.1875
SI2304BDS-T1-E3	Vishay Intertechnologies		15
SI2304BDS-T1-E3	Vishay Dale		17	14:$0.3750
SI2304BDS-T1-E3	Vishay Siliconix		17660	14:$0.3750 41:$0.1875 268:$0.1125 1335:$0.0750 4668:$0.0562 11122:$0.0506
SI2304BDS-T1-E3	Vishay Siliconix		6467
SI2304BDS-T1-E3	Vishay Semiconductors	MOSFET Transistor, N-Channel, TO-236	410	371:$0.1080 57:$0.1350 1:$0.2400
SI2304BDS-T1-E3	Vishay Siliconix	MOSFET Transistor, N-Channel, TO-236	64	57:$0.1350 22:$0.1800 1:$0.2400
SI2304BDS-T1-E3	Vishay Semiconductors	MOSFET Transistor, N-Channel, TO-236	14128	10668:$0.0625 4001:$0.0750 1:$0.5000
SI2304BDS-T1-E3	Vishay Siliconix	MOSFET Transistor, N-Channel, TO-236	80	41:$0.1500 11:$0.2500 1:$0.5000
SI2304BDS-T1-E3	Vishay Dale	MOSFET Transistor, N-Channel, TO-236	13	11:$0.2500 1:$0.5000
SI2304BDST1E3	Vishay Semiconductors	INSTOCK	2506
SI2304BDS-T1-E3 DISTI # 2300826	Vishay Intertechnologies	N CHANNEL MOSFET, FULL REEL RoHS: Compliant	0	3000:$0.2580
SI2304BDS-T1-E3 DISTI # 2427098	Vishay Intertechnologies	Transistor Polarity:N Channel RoHS: Compliant	1748	1:$0.7140 10:$0.5590 100:$0.3840 500:$0.2630 1000:$0.2580
SI2304BDS-T1-E3 DISTI # C1S803600844016	Vishay Intertechnologies	MOSFETs RoHS: Compliant	2268	250:$0.2166 100:$0.2406 25:$0.3155
SI2304BDS-T1-E3 DISTI # XSFP00000015518	Vishay Siliconix	RoHS: Compliant	98931	3000:$0.3140 98931:$0.2855
SI2304BDS-T1-E3	Vishay Intertechnologies	MOSFET 30V 3.2A 0.07Ohm RoHS: Compliant	Americas - 15000
SI2304BDS-T1-E3 DISTI # 2427098	Vishay Intertechnologies	Transistor Polarity:N Channel RoHS: Compliant	1748	1:£0.7070 25:£0.5330 50:£0.4650 100:£0.3960 250:£0.3620

图片	型号	描述
	Mfr.#: SI2304BDS-T1-GE3 OMO.#: OMO-SI2304BDS-T1-GE3	MOSFET 30V 3.2A 1.08W 70mohm @ 10V
	Mfr.#: SI2304BDS-T1-E3 OMO.#: OMO-SI2304BDS-T1-E3	MOSFET 30V 3.2A 0.07Ohm
	Mfr.#: SI2304BDS OMO.#: OMO-SI2304BDS-1190	全新原装
	Mfr.#: SI2304BDS-T1-E3 OMO.#: OMO-SI2304BDS-T1-E3-VISHAY	MOSFET N-CH 30V 2.6A SOT23-3
	Mfr.#: SI2304BDS-T1-GE3 OMO.#: OMO-SI2304BDS-T1-GE3-VISHAY	MOSFET N-CH 30V 2.6A SOT23-3
	Mfr.#: SI2304BDS-TI-E3 OMO.#: OMO-SI2304BDS-TI-E3-1190	全新原装
	Mfr.#: SI2304BDS-T1-E3-CUT TAPE OMO.#: OMO-SI2304BDS-T1-E3-CUT-TAPE-1190	全新原装
	Mfr.#: SI2304BDS-T1-GE3-CUT TAPE OMO.#: OMO-SI2304BDS-T1-GE3-CUT-TAPE-1190	全新原装

SI2304BDS-T1-E3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes