MR0A08BYS35

Mfr. #:: MR0A08BYS35
制造商:: Everspin Technologies
描述:: NVRAM 1Mb 3.3V 128Kx8 35ns Parallel MRAM
生命周期:: 制造商新产品。
数据表:: MR0A08BYS35 数据表
交货:: DHL FedEx Ups TNT EMS
支付:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:: MR0A08BYS35 更多信息

产品属性
属性值

制造商: Everspin 技术公司

产品分类: 记忆

系列: MR0A08B

打包: 托盘替代包装

安装方式: 贴片/贴片

包装盒: TSOP-44

工作温度: 0°C ~ 70°C (TA)

界面: 平行线

电压供应: 3 V ~ 3.6 V

供应商-设备-包: 44-TSOP2 (10.2x18.4)

内存大小: 1M (128K x 8)

内存型: MRAM（磁阻RAM）

速度: 35ns

访问时间: 35 ns

格式化内存: 内存

最高工作温度: + 70 C

最低工作温度: 0 C

工作电源电流: 55 mA

接口类型: 平行线

组织: 128 k x 8

数据总线宽度: 8 bit

最大电源电压: 3.6 V

电源电压最小值: 3 V

Tags: MR0A0, MR0A, MR0

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

MR0A08BYS35 评级和评论

P***n

Delivery is 1,5 months. Packing in a puffy bag. Everything works.

2019-05-16

J***n

2019-08-16

V***h

Everything is fine. Happy.

2019-05-24

MR0A08BYS35 描述

***ure Electronics: MR0A08 Series 128 K x 8 Bit 3.3 V 35 ns Asynchronous MRAM Memory - TSOP II-44

***ical: MRAM 1Mbit Parallel Interface 3.3V 44-Pin TSOP-II Tray

***i-Key: IC RAM 1MBIT PARALLEL 44TSOP2

***S: new, original packaged

MR0A08BYS35 更多信息

Magnetoresistive Random Access Memory (MRAM): Everspin Technologies Magnetoresistive Random Access Memory (MRAM) uses a 1 Transistor – 1 Magnetic Tunnel Junction (1T-1MTJ) architecture. These MRAM devices offer significantly long Data Retention (20+ years) and unlimited endurance. The data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification.

Everspin MRAM

MR0A08B / MR0D08B / MR0A16A 1Mb Parallel MRAM: Everspin Technologies MR0A08B, MR0D08B, and MR0A16A are 1,048,576-bit magnetoresistive random access memory (MRAM) devices. The Everspin MRAM devices are available in a variety of specifications, such as dual supply, serial SPI, and organized as 131,072 words of 8 bits or 65,536 words of 16 bits. These MRAM devices are as fast 35ns or 45ns read/write timing cycles with no write delays and unlimited read/write endurance.

Market price

型号	制造商	描述	库存	价格
MR0A08BYS35 DISTI # 819-1002-ND	Everspin Technologies	IC RAM 1M PARALLEL 44TSOP2 RoHS: Compliant Min Qty: 1 Container: Tray	761In Stock	1080:$8.0465 540:$8.1675 270:$8.2522 135:$8.6818 50:$9.8616 25:$9.9160 10:$10.1460 1:$10.9600
MR0A08BYS35R DISTI # MR0A08BYS35R-ND	Everspin Technologies	IC RAM 1M PARALLEL 44TSOP2 RoHS: Compliant Min Qty: 1500 Container: Tape & Reel (TR)	Temporarily Out of Stock	1500:$8.3125
MR0A08BYS35 DISTI # MR0A08BYS35	Everspin Technologies	NVRAM MRAM Parallel 1M-Bit 3.3V 44-Pin TSOP-II Tray (Alt: MR0A08BYS35) RoHS: Compliant Min Qty: 1 Container: Tray	Europe - 0	1:€9.5900 10:€8.7900 25:€8.3900 50:€8.0900 100:€7.7900 500:€7.4900 1000:€6.9900
MR0A08BYS35R DISTI # MR0A08BYS35R	Everspin Technologies	NVRAM MRAM Parallel 1M-Bit 3.3V 44-Pin TSOP-II T/R (Alt: MR0A08BYS35R) RoHS: Compliant Min Qty: 1500 Container: Tape and Reel	Europe - 0	1500:€9.0900 3000:€8.6900 6000:€8.3900 9000:€7.7900 15000:€7.1900
MR0A08BYS35 DISTI # 936-MR0A08BYS35	Everspin Technologies	NVRAM 1Mb 3.3V 128Kx8 35ns Parallel MRAM RoHS: Compliant	220	1:$10.9500 10:$10.1500 25:$9.9200 50:$9.8600 100:$8.6800 250:$8.2500 500:$8.1700
MR0A08BYS35R DISTI # 936-MR0A08BYS35R	Everspin Technologies	NVRAM 1Mb 3.3V 128Kx8 35ns Parallel MRAM RoHS: Compliant	0	1:$11.3200 10:$10.4800 25:$10.2400 50:$10.1900 100:$8.9700 250:$8.5300 500:$8.4400 1000:$8.3100 1500:$7.9300

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