BSC886N03LSGATMA1

Mfr. #:: BSC886N03LSGATMA1
制造商:: Infineon Technologies
描述:: MOSFET LV POWER MOS
生命周期:: 制造商新产品。
数据表:: BSC886N03LSGATMA1 数据表
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ECAD Model:

产品属性
属性值

制造商：: 英飞凌

产品分类：: MOSFET

技术：: 硅

安装方式：: 贴片/贴片

包装/案例：: TDSON-8

打包：: 卷轴

高度：: 1.27 mm

长度：: 5.9 mm

宽度：: 5.15 mm

品牌：: 英飞凌科技

产品类别：: MOSFET

子类别：: MOSFET

第 # 部分别名：: BSC886N03LS BSC886N3LSGXT G SP000475950

Tags: BSC886N03LSG, BSC886, BSC8, BSC

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

Market price

型号	制造商	描述	库存	价格
BSC886N03LSGATMA1 DISTI # BSC886N03LSGATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 30V 65A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	4185In Stock	1000:$0.3093 500:$0.3866 100:$0.5219 10:$0.6770 1:$0.7700
BSC886N03LSGATMA1 DISTI # BSC886N03LSGATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 30V 65A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	4185In Stock	1000:$0.3093 500:$0.3866 100:$0.5219 10:$0.6770 1:$0.7700
BSC886N03LSGATMA1 DISTI # BSC886N03LSGATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 30V 65A TDSON-8 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR)	Temporarily Out of Stock	5000:$0.2533
BSC886N03LSGXT DISTI # BSC886N03LSGATMA1	Infineon Technologies AG	Trans MOSFET N-CH 30V 13A 8-Pin TDSON EP T/R - Tape and Reel (Alt: BSC886N03LSGATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel	Americas - 0	5000:$0.1959 10000:$0.1889 20000:$0.1819 30000:$0.1759 50000:$0.1729
BSC886N03LSGATMA1 DISTI # 97Y1253	Infineon Technologies AG	MOSFET, N-CH, 30V, 65A, PG-TDSON-8,Transistor Polarity:N Channel,Continuous Drain Current Id:65A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.005ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.2V,Power RoHS Compliant: Yes	4977	1:$0.7700 10:$0.6770 25:$0.6250 50:$0.5730 100:$0.5210 250:$0.4540 500:$0.3860 1000:$0.3090
BSC886N03LS G DISTI # 726-BSC886N03LSG	Infineon Technologies AG	MOSFET N-Ch 30V 65A TDSON-8 RoHS: Compliant	0	1:$0.6400 10:$0.5290 100:$0.3420 1000:$0.2730
BSC886N03LSGATMA1	Infineon Technologies AG	Power Field-Effect Transistor, 13A I(D), 30V, 0.0092ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	5000	1000:$0.2100 500:$0.2200 100:$0.2300 25:$0.2400 1:$0.2600
BSC886N03LSGATMA1 DISTI # 2617422	Infineon Technologies AG	MOSFET, N-CH, 30V, 65A, PG-TDSON-8 RoHS: Compliant	4977	1:$1.2300 10:$1.0800 100:$0.8320 500:$0.6170 1000:$0.4930
BSC886N03LSGATMA1 DISTI # 2617422	Infineon Technologies AG	MOSFET, N-CH, 30V, 65A, PG-TDSON-8 RoHS: Compliant	4977	5:£0.5960 25:£0.5400 100:£0.4080 250:£0.3550 500:£0.3020

相关产品

图片	型号	描述
	Mfr.#: BSC886N03LS G OMO.#: OMO-BSC886N03LS-G	MOSFET N-Ch 30V 65A TDSON-8
	Mfr.#: BSC886N03LSGATMA1 OMO.#: OMO-BSC886N03LSGATMA1	MOSFET LV POWER MOS
	Mfr.#: BSC886N03LS OMO.#: OMO-BSC886N03LS-1190	全新原装
	Mfr.#: BSC886N03LS G OMO.#: OMO-BSC886N03LS-G-1190	Trans MOSFET N-CH 30V 13A 8-Pin TDSON EP T/R
	Mfr.#: BSC886N03LSG OMO.#: OMO-BSC886N03LSG-1190	Power Field-Effect Transistor, 13A I(D), 30V, 0.0092ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
	Mfr.#: BSC886N03LSG E8178 OMO.#: OMO-BSC886N03LSG-E8178-1190	全新原装
	Mfr.#: BSC886N03LSGATMA1 OMO.#: OMO-BSC886N03LSGATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 30V 65A TDSON-8
	Mfr.#: BSC886N03LSGATMA1 , TDZF OMO.#: OMO-BSC886N03LSGATMA1-TDZF-1190	全新原装