SI7423DN-T1-GE3

SI7423DN-T1-GE3
Mfr. #:
SI7423DN-T1-GE3
制造商:
Vishay
描述:
RF Bipolar Transistors MOSFET 30V 11.7A 3.8W 18mohm @ 10V
生命周期:
制造商新产品。
数据表:
SI7423DN-T1-GE3 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
产品属性
属性值
制造商
威世
产品分类
FET - 单
系列
SI74xxDx
打包
卷轴
部分别名
SI7423DN-GE3
安装方式
贴片/贴片
包装盒
PowerPAK-1212-8
技术
通道数
1 Channel
配置
单身的
晶体管型
1 P-Channel
钯功耗
1.5 W
最高工作温度
+ 150 C
最低工作温度
- 55 C
秋季时间
50 ns
上升时间
10 ns
VGS-栅极-源极-电压
20 V
Id 连续漏极电流
7.4 A
Vds-漏-源-击穿电压
- 30 V
Rds-On-Drain-Source-Resistance
18 mOhms
晶体管极性
P-通道
典型关断延迟时间
74 ns
典型开启延迟时间
11 ns
通道模式
增强
Tags
SI7423DN-T, SI7423D, SI7423, SI742, SI74, SI7
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET P-CH 30V 7.4A 8-Pin PowerPAK 1212 T/R
***ment14 APAC
P CH MOSFET; Transistor Polarity:P Chann; P CH MOSFET; Transistor Polarity:P Channel; Continuous Drain Current Id:-11.7A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):30mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-1V; Power Dissipation Pd:3.8W
型号 制造商 描述 库存 价格
SI7423DN-T1-GE3
DISTI # SI7423DN-T1-GE3-ND
Vishay SiliconixMOSFET P-CH 30V 7.4A PPAK 1212-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 3000:$0.7084
SI7423DN-T1-GE3
DISTI # SI7423DN-T1-GE3
Vishay IntertechnologiesTrans MOSFET P-CH 30V 7.4A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SI7423DN-T1-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel
Americas - 0
  • 3000:$0.6689
  • 6000:$0.6489
  • 12000:$0.6229
  • 18000:$0.6059
  • 30000:$0.5889
SI7423DN-T1-GE3
DISTI # 781-SI7423DN-GE3
Vishay IntertechnologiesMOSFET 30V 11.7A 3.8W 18mohm @ 10V
RoHS: Compliant
3041
  • 1:$1.6100
  • 10:$1.3300
  • 100:$1.0200
  • 500:$0.8750
  • 1000:$0.6900
  • 3000:$0.6440
图片 型号 描述
SI7423DN-T1-GE3

Mfr.#: SI7423DN-T1-GE3

OMO.#: OMO-SI7423DN-T1-GE3

MOSFET 30V 11.7A 3.8W 18mohm @ 10V
SI7423DN-T1-E3

Mfr.#: SI7423DN-T1-E3

OMO.#: OMO-SI7423DN-T1-E3

MOSFET 30V 11.7A 3.8W 18mohm @ 10V
SI7423DN-T1-GE3

Mfr.#: SI7423DN-T1-GE3

OMO.#: OMO-SI7423DN-T1-GE3-VISHAY

RF Bipolar Transistors MOSFET 30V 11.7A 3.8W 18mohm @ 10V
SI7423DN-T1-E3-CUT TAPE

Mfr.#: SI7423DN-T1-E3-CUT TAPE

OMO.#: OMO-SI7423DN-T1-E3-CUT-TAPE-1190

全新原装
SI7423DN

Mfr.#: SI7423DN

OMO.#: OMO-SI7423DN-1190

全新原装
SI7423DN-T1-E3

Mfr.#: SI7423DN-T1-E3

OMO.#: OMO-SI7423DN-T1-E3-VISHAY

MOSFET P-CH 30V 7.4A 1212-8
SI7423DN-T1-E3-S

Mfr.#: SI7423DN-T1-E3-S

OMO.#: OMO-SI7423DN-T1-E3-S-1190

全新原装
SI7423DN-T1-GE3   7423

Mfr.#: SI7423DN-T1-GE3 7423

OMO.#: OMO-SI7423DN-T1-GE3-7423-1190

全新原装
可用性
库存:
Available
订购:
1500
输入数量:
SI7423DN-T1-GE3的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格(美元)
数量
单价
小计金额
1
US$0.88
US$0.88
10
US$0.84
US$8.39
100
US$0.80
US$79.50
500
US$0.75
US$375.40
1000
US$0.71
US$706.70
由于2021年半导体供不应求,低于2021年之前的正常价格,请发询价确认。
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