CY15B104Q-LHXIT

Mfr. #:: CY15B104Q-LHXIT
制造商:: Cypress Semiconductor
描述:: F-RAM F-RAM Memory Serial
生命周期:: 制造商新产品。
数据表:: CY15B104Q-LHXIT 数据表
交货:: DHL FedEx Ups TNT EMS
支付:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:: CY15B104Q-LHXIT 更多信息 CY15B104Q-LHXIT Product Details

产品属性
属性值

制造商：: 赛普拉斯半导体

产品分类：: 内存

RoHS：: Y

系列：: CY15B104Q

打包：: 卷轴

品牌：: 赛普拉斯半导体

湿气敏感：: 是的

产品类别：: 随机存取存储器

出厂包装数量：: 2500

子类别：: 内存和数据存储

Tags: CY15B104, CY15B10, CY15B1, CY15B, CY15, CY1

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

CY15B104Q-LHXIT 描述

***ure Electronics: CY15B104Q Series 4Mb (512 K x 8) 3 V Surface Mount Serial (SPI) F-RAM - TDFN-8

***ical: FRAM 4Mbit Serial-SPI Interface 3.3V 8-Pin DFN EP T/R

***et Europe: NVRAM FRAM Serial-SPI 4M-Bit 3.3V 8-Pin TDFN EP T/R

***i-Key: IC FRAM 4M SPI 40MHZ 8DFN

CY15B104Q-LHXIT 更多信息

CY15B104Q 4-Mbit Serial SPI F-RAM: Cypress CY15B104Q 4-Mbit Serial SPI F-RAM is a 4-Mbit nonvolatile ferroelectric random access memory (F-RAM) logically organized as 512K×8. F-RAM is nonvolatile and performs reads and writes similar to a RAM with reliable data retention of 151 years. The CY15B104Q eliminates the complexities, overhead, and system-level reliability problems caused by serial flash, EEPROM, and other nonvolatile memories.

CY15B104Qx Serial (SPI) F-RAM: Cypress Semiconductor CY15B104Qx Serial (SPI) F-RAM is a 4Mbit non volatile random access memory that employs an advanced ferroelectric process. F-RAM provides reliable data retention for 151 years eliminating the complexities caused by serial flash, EEPROM and other non volatile memories. CY15B104Qx performs write operations at bus speed and is capable of supporting 100 million times more write cycles than EEPROM. CY15B104Qx provides benefits to users of serial EEPROM or flash as a hardware drop-in replacement. CY15B104Qx uses the high-speed SPI bus that enhances the high-speed write capability of F-RAM technology.

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