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FDU7N60NZTU

FDU7N60NZTU
Mfr. #:
FDU7N60NZTU
制造商:
ON Semiconductor / Fairchild
描述:
MOSFET N-Channel MOSFET 600V 5.5A 1.25Ohm
生命周期:
制造商新产品。
数据表:
FDU7N60NZTU 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
产品属性
属性值
制造商：
安森美半导体
产品分类：
MOSFET
RoHS：
Y
技术：
硅
安装方式：
通孔
包装/案例：
TO-251-3
通道数：
1 Channel
晶体管极性：
N通道
Vds - 漏源击穿电压：
600 V
Id - 连续漏极电流：
5.5 A
Rds On - 漏源电阻：
1.05 Ohms
最低工作温度：
- 55 C
最高工作温度：
+ 150 C
Pd - 功耗：
90 W
配置：
单身的
商品名：
单场效应晶体管
打包：
管子
高度：
6.3 mm
长度：
6.8 mm
系列：
FDU7N60NZTU
晶体管类型：
1 N-Channel
宽度：
2.5 mm
品牌：
安森美半导体/飞兆半导体
产品类别：
MOSFET
出厂包装数量：
5040
子类别：
MOSFET
单位重量：
0.012102 oz
Tags
FDU7N60NZ, FDU7N60N, FDU7N6, FDU7N, FDU7, FDU
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
N-Channel Power MOSFET, UniFETTM II, 600 V, 5.5 A, 1.25 Ω, IPAK
*** Stop Electro
Power Field-Effect Transistor, 5.5A I(D), 600V, 1.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***rchild Semiconductor
UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
***emi
N-Channel Power MOSFET, UniFETTM, 500 V, 6 A, 900 mΩ, IPAK
***et
Trans MOSFET N-CH 500V 6A 3-Pin(3+Tab) IPAK Rail
***r Electronics
Power Field-Effect Transistor, 6A I(D), 500V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***ark
MOSFET, N-CH, 500V, 6A, IPAK; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:6A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V; No. of Pins:3Pins RoHS Compliant: Yes
***emi
Power MOSFET, N-Channel, SUPERFET®, Easy Drive, 600 V, 4.6 A, 950 mΩ, IPAK
***nell
MOSFET, N, 600V, I-PAK; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:600V; Current, Id Cont:4.6A; Resistance, Rds On:0.95ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:5V; Case Style:I-PAK; Termination Type:Through Hole; Alternate Case Style:TO-251AA; Current, Idm Pulse:13.8A; No. of Pins:3; Power Dissipation:54W; Power, Pd:54W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Temperature, Tj Max:150°C; Temperature, Tj Min:-55°C; Voltage, Vds:600V; Voltage, Vds Max:600V; Voltage, Vgs th Max:5V; dv/dt:10V/µs
***rchild Semiconductor
SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
***icroelectronics
N-channel 600 V, 1.06 Ohm typ., 4.5 A MDmesh M2 Power MOSFET in IPAK package
***ical
Trans MOSFET N-CH 600V 4.5A 3-Pin(3+Tab) IPAK Tube
***(Formerly Allied Electronics)
Power MOSFET Nch MDmeshII plus 600V 4.5A
*** Electronic Components
MOSFET N-CH 600V 1.06Ohm 4.5A MDmesh M2
***r Electronics
Power Field-Effect Transistor, 4.5A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
***S
French Electronic Distributor since 1988
***icroelectronics SCT
Power MOSFETs, 600V, 4.5A, IPAK, Tube
***icroelectronics
N-channel 600 V, 0.86 Ohm typ., 5 A MDmesh M2 Power MOSFET in IPAK package
***ure Electronics
N-Channel 600 V 950 mOhm Through Hole Mdmesh II Plus Power Mosfet - IPAK
***r Electronics
Power Field-Effect Transistor, 5A I(D), 600V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
***ure Electronics
E Series N Channel 700 V 900 mO 34 nC Through Hole Power Mosfet - TO-251
***ical
Trans MOSFET N-CH 620V 6A 3-Pin(3+Tab) TO-251
***el Electronic
MOSFET 620V 900mOhm@10V 6A N-Ch E-SRS
***et Europe
Trans MOSFET N-CH 650V 4.3A 3-Pin TO-251 Tube
***ronik
N-CH 600V 4,3A 1000mOhm TO251
*** Electronics
COOLMOS N-CHANNEL POWER MOSFET
***el Nordic
Contact for details
型号 制造商 描述 库存 价格
FDU7N60NZTU
DISTI # FDU7N60NZTU-ND		ON SemiconductorMOSFET N-CH 600V SGL IPAK
RoHS: Compliant
Min Qty: 5040
Container: Tube		Temporarily Out of Stock
  • 5040:$0.6291
FDU7N60NZTU
DISTI # FDU7N60NZTU		ON SemiconductorMOS Power Transistors HV (>= 200V) - Rail/Tube (Alt: FDU7N60NZTU)
RoHS: Compliant
Min Qty: 5040
Container: Tube		Americas - 0
  • 5040:$0.5619
  • 10080:$0.5579
  • 20160:$0.5509
  • 30240:$0.5439
  • 50400:$0.5299
FDU7N60NZTU
DISTI # 54T8364		ON SemiconductorUF2 600V 1.25OHM IPAK / TUBE0
  • 1:$1.4100
  • 10:$1.2100
  • 100:$0.9250
  • 500:$0.8170
  • 1000:$0.7140
  • 2500:$0.5770
  • 10000:$0.5590
FDU7N60NZTUON Semiconductor 
RoHS: Not Compliant		5040
  • 1000:$0.6300
  • 500:$0.6700
  • 100:$0.6900
  • 25:$0.7200
  • 1:$0.7800
FDU7N60NZTUFairchild Semiconductor CorporationPower Field-Effect Transistor, 5.5A I(D), 600V, 1.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
RoHS: Compliant		84030
  • 1000:$0.6300
  • 500:$0.6700
  • 100:$0.6900
  • 25:$0.7200
  • 1:$0.7800
FDU7N60NZTU
DISTI # 512-FDU7N60NZTU		ON SemiconductorMOSFET N-Channel MOSFET 600V 5.5A 1.25Ohm
RoHS: Compliant		5000
  • 1:$1.4200
  • 10:$1.2100
  • 100:$0.9250
  • 500:$0.8180
  • 1000:$0.6450
  • 2500:$0.5720
  • 10000:$0.5510
FDU7N60NZTU
DISTI # 8070710P		ON SemiconductorMOSFETFAIRCHILDFDU7N60NZTU, TU4560
  • 50:£0.3840
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可用性
库存:
Available
订购:
1986
输入数量:
FDU7N60NZTU的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格（美元）
数量
单价
小计金额
1
US$0.95
US$0.95
10
US$0.82
US$8.17
100
US$0.63
US$62.70
500
US$0.55
US$277.00
1000
US$0.44
US$437.00
2500
US$0.39
US$970.00
10000
US$0.37
US$3 730.00
25000
US$0.36
US$9 025.00
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