IPW60R090CFD7XKSA1

Mfr. #:: IPW60R090CFD7XKSA1
制造商:: Infineon Technologies
描述:: HIGH POWER_NEW
生命周期:: 制造商新产品。
数据表:: IPW60R090CFD7XKSA1 数据表
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更多信息:: IPW60R090CFD7XKSA1 更多信息

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Tags: IPW60R09, IPW60R0, IPW60, IPW6, IPW

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

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Vacuum Packaging with PL

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IPW60R090CFD7XKSA1 描述

***et Europe: CoolMOS CFD7 SJ High Voltage MOSFET 600V 90/95mOhm TO-247

***ical: 600V CoolMOS CFD7 Power Transistor

***ronik: N-CH 600V 50A 90mOhm TO-247-3

***i-Key: HIGH POWER_NEW

***ark: Mosfet, 600V, 25A, 150Deg C, 125W; Transistor Polarity:n Channel; Continuous Drain Current Id:25A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.069Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Rohs Compliant: Yes

***ment14 APAC: Prices include import duty and tax. MOSFET, 600V, 25A, 150DEG C, 125W; Transistor Polarity:N Channel; Continuous Drain Current Id:25A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.069ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:125W; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:CoolMOS CFD7 Series; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (27-Jun-2018)

***nell: MOSFET, 600V, 25A, 150° C, 125W; Polarità Transistor:Canale N; Corrente Continua di Drain Id:25A; Tensione Drain Source Vds:600V; Resistenza di Attivazione Rds(on):0.069ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:4V; Dissipazione di Potenza Pd:125W; Modello Case Transistor:TO-247; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:CoolMOS CFD7 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)

***ineon: The 600V CoolMOS CFD7 is Infineons latest high voltage superjunction MOSFET technology with integrated fast body diode, completing the CoolMOS 7 series. CoolMOS CFD7 comes with reduced gate charge (Qg), improved turn-off behavior and a reverse recovery charge (Qrr) of up to 69% lower compared to the competition, as well as the lowest reverse recovery time (trr) in the market. | Summary of Features: Ultra-fast body diode; Best-in-class reverse recovery charge (Qrr); Improved reverse diode dv/dt and dif/dt ruggedness; Lowest FOM RDS(on) x Qg and Eoss; Best-in-class RDS(on)/package combinations | Benefits: Best-in-class hard commutation ruggedness; Highest reliability for resonant topologies; Highest efficiency with outstanding ease-of-use/performance trade-off; Enabling increased power density solutions | Target Applications: Target Applications:

IPW60R090CFD7XKSA1 更多信息

CFD7 CoolMOS™ MOSFETs: Infineon Technologies CFD7 CoolMOS™ MOSFETs are ideal for resonant high power topologies and feature high voltage superjunction MOSFET technology. The MOSFETs have an integrated fast body diode and completes the CoolMOS 7 series. Typical high power SMPS applications include server, telecom and EV charging stations.

CoolMOS™ 7 Superjunction MOSFETs: Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.

Market price

型号	制造商	描述	库存	价格
IPW60R090CFD7XKSA1 DISTI # IPW60R090CFD7XKSA1-ND	Infineon Technologies AG	HIGH POWER_NEW RoHS: Compliant Min Qty: 1 Container: Tube	241In Stock	2640:$3.4439 720:$4.2984 240:$5.0493 25:$5.8260 10:$6.1630 1:$6.8600
IPW60R090CFD7XKSA1 DISTI # IPW60R090CFD7XKSA1	Infineon Technologies AG	CoolMOS CFD7 SJ High Voltage MOSFET 600V 90/95mOhm TO-247 - Rail/Tube (Alt: IPW60R090CFD7XKSA1) RoHS: Compliant Min Qty: 240 Container: Tube	Americas - 0	1440:$3.0900 2400:$3.0900 960:$3.2900 480:$3.3900 240:$3.4900
IPW60R090CFD7XKSA1 DISTI # SP001686056	Infineon Technologies AG	CoolMOS CFD7 SJ High Voltage MOSFET 600V 90/95mOhm TO-247 (Alt: SP001686056) RoHS: Compliant Min Qty: 1	Europe - 0	1000:€2.7900 500:€2.8900 100:€2.9900 50:€3.0900 25:€3.1900 10:€3.4900 1:€4.2900
IPW60R090CFD7XKSA1 DISTI # 71AC0409	Infineon Technologies AG	MOSFET, 600V, 25A, 150DEG C, 125W,Transistor Polarity:N Channel,Continuous Drain Current Id:25A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.069ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power RoHS Compliant: Yes	240	500:$4.1300 250:$4.6100 100:$4.8600 50:$5.1000 25:$5.3500 10:$5.6000 1:$6.5900
IPW60R090CFD7XKSA1 DISTI # 726-IPW60R090CFD7XKS	Infineon Technologies AG	MOSFET HIGH POWER_NEW RoHS: Compliant	0	1:$6.5200 10:$5.5400 100:$4.8100 250:$4.5600 500:$4.0900
IPW60R090CFD7XKSA1 DISTI # 2916151	Infineon Technologies AG	MOSFET, 600V, 25A, 150DEG C, 125W RoHS: Compliant	480	1000:$4.9500 500:$5.0400 250:$5.3100 100:$5.6200 10:$6.3500 1:$6.7900
IPW60R090CFD7XKSA1 DISTI # XSKDRABV0051213	Infineon Technologies AG	RoHS: Compliant	720 in Stock0 on Order	720:$4.3200 240:$4.6300
IPW60R090CFD7XKSA1 DISTI # 2916151	Infineon Technologies AG	MOSFET, 600V, 25A, 150DEG C, 125W	455	500:£2.9900 250:£3.3400 100:£3.5200 10:£4.0600 1:£5.2500

IPW60R090CFD7XKSA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes