FDP10N60NZ

Mfr. #:: FDP10N60NZ
制造商:: ON Semiconductor
描述:: MOSFET N-CH 600V 10A TO-220
生命周期:: 制造商新产品。
数据表:: FDP10N60NZ 数据表
交货:: DHL FedEx Ups TNT EMS
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ECAD Model:

产品属性
属性值

Tags: FDP10N, FDP10, FDP1, FDP

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FDP10N60NZ 描述

***Components: In a Pack of 2, N-Channel MOSFET, 10 A, 600 V, 3-Pin TO-220 ON Semiconductor FDP10N60NZ

***Semiconductor: N-Channel Power MOSFET, UniFETTM II, 600V, 10A, 750mΩ, TO-220

***p One Stop Global: Trans MOSFET N-CH 600V 10A 3-Pin(3+Tab) TO-220 Tube

***inecomponents.com: UNIFET2 600V N-CHANNEL MOSFET, TO220

***i-Key: MOSFET N-CH 600V 10A TO-220

***ark: MOSFET,N CH,600V,10A,TO220; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.64ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:185W; No. of Pins:3 ;RoHS Compliant: Yes

***ment14 APAC: MOSFET,N CH,600V,10A,TO220; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.64ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:185W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (18-Jun-2012)

***rchild Semiconductor: UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.

Market price

型号	制造商	描述	库存	价格
FDP10N60NZ DISTI # 26637384	ON Semiconductor	UNIFET2 600V N-CHANNEL MOSFET,	6000	1000:$1.6600
FDP10N60NZ DISTI # 26563445	ON Semiconductor	UNIFET2 600V N-CHANNEL MOSFET,	2000	1000:$0.7134
FDP10N60NZ DISTI # FDP10N60NZ-ND	ON Semiconductor	MOSFET N-CH 600V 10A TO-220 RoHS: Compliant Min Qty: 1 Container: Tube	780In Stock	5000:$0.7299 3000:$0.7579 1000:$0.8141 100:$1.1959 25:$1.4036 10:$1.4880 1:$1.6600
FDP10N60NZ DISTI # V36:1790_06359715	ON Semiconductor	UNIFET2 600V N-CHANNEL MOSFET,	0	1000000:$0.6481 500000:$0.6513 100000:$0.9710 10000:$1.5600 1000:$1.6600
FDP10N60NZ DISTI # FDP10N60NZ	ON Semiconductor	Trans MOSFET N-CH 600V 10A 3-Pin(3+Tab) TO-220 Rail - Bulk (Alt: FDP10N60NZ) Min Qty: 363 Container: Bulk	Americas - 0	3630:$0.8509 1815:$0.8729 1089:$0.8839 726:$0.8959 363:$0.9009
FDP10N60NZ DISTI # FDP10N60NZ	ON Semiconductor	Trans MOSFET N-CH 600V 10A 3-Pin(3+Tab) TO-220 Rail (Alt: FDP10N60NZ) RoHS: Compliant Min Qty: 1	Europe - 0	1000:€0.6639 500:€0.7149 100:€0.7749 50:€0.8449 25:€0.9299 10:€1.0329 1:€1.1619
FDP10N60NZ DISTI # FDP10N60NZ	ON Semiconductor	Trans MOSFET N-CH 600V 10A 3-Pin(3+Tab) TO-220 Rail - Rail/Tube (Alt: FDP10N60NZ) RoHS: Compliant Min Qty: 1000 Container: Tube	Americas - 0	10000:$0.6599 6000:$0.6759 4000:$0.6849 2000:$0.6939 1000:$0.6979
FDP10N60NZ DISTI # FDP10N60NZ	ON Semiconductor	Trans MOSFET N-CH 600V 10A 3-Pin(3+Tab) TO-220 Rail (Alt: FDP10N60NZ) RoHS: Compliant Min Qty: 1000	Asia - 0	50000:$0.8766 25000:$0.8912 10000:$0.9219 5000:$0.9548 3000:$0.9902 2000:$1.0283 1000:$1.0694
FDP10N60NZ DISTI # 512-FDP10N60NZ	ON Semiconductor	MOSFET 600N-Channel MOSFET UniFET-II RoHS: Compliant	623	1:$1.8100 10:$1.5400 100:$1.2300 500:$1.0800 1000:$0.8970
FDP10N60NZ	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 10A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Compliant	40000	1000:$0.7800 500:$0.8200 100:$0.8500 25:$0.8900 1:$0.9600
FDP10N60NZ DISTI # 7599166	ON Semiconductor	MOSFET N-CH 600V 10A UNIFET-II TO220, PK	90	200:£0.9000 100:£0.9300 40:£0.9900 20:£1.0800 2:£1.3150
FDP10N60NZ DISTI # 7599166P	ON Semiconductor	MOSFET N-CH 600V 10A UNIFET-II TO220, TU	958	200:£0.9000 100:£0.9300 40:£0.9900 20:£1.0800
FDP10N60NZ DISTI # 1885782	ON Semiconductor	MOSFET,N CH,600V,10A,TO220 RoHS: Compliant	0	1000:$1.3100 500:$1.5800 100:$2.0200 10:$2.5200 1:$2.7800

相关产品

图片	型号	描述
	Mfr.#: FDP10N60NZ OMO.#: OMO-FDP10N60NZ	MOSFET 600N-Channel MOSFET UniFET-II
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	Mfr.#: FDP100N10,100N10, OMO.#: OMO-FDP100N10-100N10--1190	全新原装
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	Mfr.#: FDP10N60/FDPF10N60C OMO.#: OMO-FDP10N60-FDPF10N60C-1190	全新原装
	Mfr.#: FDP10N60NZ,10N60NZ, OMO.#: OMO-FDP10N60NZ-10N60NZ--1190	全新原装
	Mfr.#: FDP10N60ZU OMO.#: OMO-FDP10N60ZU-1190	全新原装

可用性

库存:: Available
订购:: 3000
输入数量:

FDP10N60NZ的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]

参考价格（美元）

数量
单价
小计金额

1: ~~US$0.99~~; ~~US$0.99~~

10: ~~US$0.94~~; ~~US$9.40~~

100: ~~US$0.89~~; ~~US$89.09~~

500: ~~US$0.84~~; ~~US$420.70~~

1000: ~~US$0.79~~; ~~US$791.90~~

从...开始

FDP10N 5
FDP10 12
FDP1 65
FDP 605

FDP10N60NZ

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes