NE3511S02-T1C-A

NE3511S02-T1C-A
Mfr. #:
NE3511S02-T1C-A
制造商:
CEL
描述:
RF JFET Transistors SUPER Lo Noise PseudomorpHIc HJ FET
生命周期:
制造商新产品。
数据表:
NE3511S02-T1C-A 数据表
交货:
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支付:
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HTML Datasheet:
NE3511S02-T1C-A DatasheetNE3511S02-T1C-A Datasheet (P4-P6)NE3511S02-T1C-A Datasheet (P7-P9)NE3511S02-T1C-A Datasheet (P10)
ECAD Model:
产品属性
属性值
制造商
电灯
产品分类
晶体管 - FET、MOSFET - 单
打包
卷轴
安装方式
贴片/贴片
包装盒
S0-2
技术
砷化镓
晶体管型
高频场效应管
获得
13.5 dB
钯功耗
165 mW
最高工作温度
+ 125 C
工作频率
12 GHz
Id 连续漏极电流
70 mA
Vds-漏-源-击穿电压
4 V
晶体管极性
N通道
正向跨导最小值
65 mS
VGS-栅极-源极击穿电压
- 3 V
NF-噪声系数
0.3 dB
Tags
NE3511, NE351, NE35, NE3
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
型号 制造商 描述 库存 价格
NE3511S02-T1C-A
DISTI # NE3511S02-T1C-ATR-ND
California Eastern Laboratories (CEL)IC AMP RF LNA 13.5DB S02
RoHS: Compliant
Min Qty: 2000
Container: Tape & Reel (TR)
Limited Supply - Call
    NE3511S02-T1C-A
    DISTI # NE3511S02-T1C-ACT-ND
    California Eastern Laboratories (CEL)IC AMP RF LNA 13.5DB S02
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    Limited Supply - Call
      NE3511S02-T1C-A
      DISTI # NE3511S02-T1C-ADKR-ND
      California Eastern Laboratories (CEL)IC AMP RF LNA 13.5DB S02
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®
      Limited Supply - Call
        NE3511S02-T1C-A
        DISTI # 551-NE3511S02-T1C-A
        California Eastern Laboratories (CEL)RF JFET Transistors SUPER Lo Noise PseudomorpHIc HJ FET
        RoHS: Compliant
        0
          图片 型号 描述
          NE3511S02A

          Mfr.#: NE3511S02A

          OMO.#: OMO-NE3511S02A-1190

          Trans JFET N-CH 4V 70mA 4-Pin Micro-X (Alt: NE3511S02A)
          NE3511S02-A

          Mfr.#: NE3511S02-A

          OMO.#: OMO-NE3511S02-A-CEL

          RF JFET Transistors X to Ku Band Super Low Noise Amp N-Ch
          NE3511S02-T1C-A

          Mfr.#: NE3511S02-T1C-A

          OMO.#: OMO-NE3511S02-T1C-A-CEL

          RF JFET Transistors SUPER Lo Noise PseudomorpHIc HJ FET
          可用性
          库存:
          Available
          订购:
          4000
          输入数量:
          NE3511S02-T1C-A的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
          参考价格(美元)
          数量
          单价
          小计金额
          1
          US$1.12
          US$1.12
          10
          US$1.07
          US$10.69
          100
          US$1.01
          US$101.25
          500
          US$0.96
          US$478.15
          1000
          US$0.90
          US$900.00
          从...开始
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