RF1S9630

RF1S9630
Mfr. #:
RF1S9630
制造商:
Rochester Electronics, LLC
描述:
Transisto
生命周期:
制造商新产品。
数据表:
RF1S9630 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
产品属性
属性值
Tags
RF1S963, RF1S96, RF1S9, RF1S, RF1
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
型号 制造商 描述 库存 价格
RF1S9630Harris SemiconductorTransistor
RoHS: Not Compliant
2400
  • 1000:$1.0400
  • 500:$1.0900
  • 100:$1.1400
  • 25:$1.1900
  • 1:$1.2800
RF1S9630SMHarris SemiconductorPower Field-Effect Transistor, 6.5A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
RoHS: Not Compliant
1650
  • 1000:$0.9600
  • 500:$1.0100
  • 100:$1.0500
  • 25:$1.1000
  • 1:$1.1800
RF1S9630Harris Semiconductor 37
    图片 型号 描述
    RF1S15N06

    Mfr.#: RF1S15N06

    OMO.#: OMO-RF1S15N06-1190

    Power Field-Effect Transistor, 15A I(D), 60V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
    RF1S25N06SM

    Mfr.#: RF1S25N06SM

    OMO.#: OMO-RF1S25N06SM-1190

    Power Field-Effect Transistor, 25A I(D), 60V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
    RF1S41N03LSM

    Mfr.#: RF1S41N03LSM

    OMO.#: OMO-RF1S41N03LSM-1190

    全新原装
    RF1S45N02L

    Mfr.#: RF1S45N02L

    OMO.#: OMO-RF1S45N02L-1190

    Power Field-Effect Transistor, 45A I(D), 20V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
    RF1S45N03L

    Mfr.#: RF1S45N03L

    OMO.#: OMO-RF1S45N03L-1190

    Power Field-Effect Transistor, 45A I(D), 30V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
    RF1S45N03LSNM9A

    Mfr.#: RF1S45N03LSNM9A

    OMO.#: OMO-RF1S45N03LSNM9A-1190

    全新原装
    RF1S50N06SM

    Mfr.#: RF1S50N06SM

    OMO.#: OMO-RF1S50N06SM-1190

    全新原装
    RF1S640SM9A_NL

    Mfr.#: RF1S640SM9A_NL

    OMO.#: OMO-RF1S640SM9A-NL-1190

    全新原装
    RF1S9640H022

    Mfr.#: RF1S9640H022

    OMO.#: OMO-RF1S9640H022-1190

    全新原装
    RF1SA45N06SM9A

    Mfr.#: RF1SA45N06SM9A

    OMO.#: OMO-RF1SA45N06SM9A-1190

    全新原装
    可用性
    库存:
    Available
    订购:
    1000
    输入数量:
    RF1S9630的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
    参考价格(美元)
    数量
    单价
    小计金额
    1
    US$0.00
    US$0.00
    10
    US$0.00
    US$0.00
    100
    US$0.00
    US$0.00
    500
    US$0.00
    US$0.00
    1000
    US$0.00
    US$0.00
    从...开始
    最新产品
    • IO-Link™ Devices
      Maxim Integrated’s complete portfolio of IO-link devices integrate value-adding features to provide design flexibility and offload the local processor.
    • Large Diameter Clear Hole Spacers
      RAF's large diameter clear hole spacers for industrial applications are available in standard stock sizes, various materials and finishes, and custom options.
    • WE-ExB Series Common Mode Power Line Choke
      Wurth's WE-ExB series is the double core made of MnZn and NiZn. Its insertion loss has a range of effect over a broader frequency range than does a single NiZn or MnZn core.
    • CPI2-B1-REU Production Device Programmer
      Phyton's CPI2-B1-REU in-system programmer supports Renesas microcontrollers, memory devices, and MCUs from other manufacturers.
    • CFSH05-20L Schottky Diode
      Central Semiconductor's space saving, low profile Schottky diode for applications including DC-DC conversion and circuit protection.
    Top