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| 型号 | 制造商 | 描述 | 库存 | 价格 |
|---|---|---|---|---|
| RF1S640SM DISTI # RF1S640SM | ON Semiconductor | Trans MOSFET N-CH 200V 18A 3-Pin(2+Tab) TO-263AB - Bulk (Alt: RF1S640SM) RoHS: Not Compliant Min Qty: 133 Container: Bulk | Americas - 0 |
|
| RF1S640SM DISTI # 512-RF1S640SM | ON Semiconductor | MOSFET N-Ch Power MOSFET 200V/18a/0.180 Ohm RoHS: Not compliant | 0 | |
| RF1S640SM9A DISTI # 512-RF1S640SM9A | ON Semiconductor | MOSFET RoHS: Not compliant | 0 | |
| RF1S640SM | Harris Semiconductor | Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Not Compliant | 1102 |
|
| RF1S640SM9A | Fairchild Semiconductor Corporation | MOSFET Transistor, N-Channel, TO-263AB | 698 |
|
| RF1S640SM9A | Harris Semiconductor | MOSFET Transistor, N-Channel, TO-263AB | 81 |
|
| RF1S640SM9A | Intersil Corporation | 11191 | ||
| RF1S640SM9A | HARTING Technology Group | 2400 |
| 图片 | 型号 | 描述 |
|---|---|---|
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Mfr.#: RF1S01 OMO.#: OMO-RF1S01-1190 |
全新原装 |
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Mfr.#: RF1S25N06SM OMO.#: OMO-RF1S25N06SM-1190 |
Power Field-Effect Transistor, 25A I(D), 60V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
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Mfr.#: RF1S30P06 OMO.#: OMO-RF1S30P06-1190 |
Power Field-Effect Transistor, 30A I(D), 60V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA |
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Mfr.#: RF1S30P06SM9AS OMO.#: OMO-RF1S30P06SM9AS-1190 |
全新原装 |
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Mfr.#: RF1S45N03LSM9A OMO.#: OMO-RF1S45N03LSM9A-1190 |
全新原装 |
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Mfr.#: RF1S45N06S OMO.#: OMO-RF1S45N06S-1190 |
全新原装 |
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Mfr.#: RF1S4ON10SM OMO.#: OMO-RF1S4ON10SM-1190 |
全新原装 |
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Mfr.#: RF1S540 OMO.#: OMO-RF1S540-1190 |
Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA |
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Mfr.#: RF1S630 OMO.#: OMO-RF1S630-1190 |
Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
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Mfr.#: RF1S70N06DPAK OMO.#: OMO-RF1S70N06DPAK-1190 |
全新原装 |
